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BYV42G-200_15

Description
Dual ultrafast power diode
File Size136KB,11 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BYV42G-200_15 Overview

Dual ultrafast power diode

I2P
AK
BYV42G-200
Dual ultrafast power diode
Rev. 01 — 11 January 2011
Product data sheet
1. Product profile
1.1 General description
Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package.
1.2 Features and benefits
High reverse voltage surge capability
High thermal cycling performance
Low thermal resistance
Soft recovery characteristic minimizes
power consuming oscillations
Very low on-state loss
1.3 Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1.
Symbol
V
RRM
I
O(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average output current
square-wave pulse;
δ
= 0.5 ;
T
mb
104 °C; both diodes
conducting; see
Figure 1;
see
Figure 2
T
j(init)
= 25 °C; t
p
= 10 ms;
sine-wave pulse; per diode
t
p
= 2 µs;
δ
= 0.001
HBM; C = 250 pF; R = 1.5 kΩ;
all pins
I
F
= 15 A; T
j
= 150 °C;
see
Figure 4
Conditions
Min
-
-
Typ
-
-
Max Unit
200
30
V
A
I
FSM
I
RRM
V
ESD
non-repetitive peak
forward current
repetitive peak reverse
current
electrostatic discharge
voltage
forward voltage
-
-
-
-
-
-
160
0.2
8
A
A
kV
Static characteristics
V
F
-
0.78 0.85 V
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