BYC15-600
Hyperfast power diode
Rev. 02 — 29 July 2010
Product data sheet
1. Product profile
1.1 General description
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package
1.2 Features and benefits
Extremely fast switching
Low reverse recovery current
Low thermal resistance
Reduces switching loss in associated
MOSFET
1.3 Applications
Continuous Current Mode (CCM)
Power
Half-bridge lighting ballasts
Half-bridge or full-bridge
switched-mode
1.4 Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward current square-wave pulse;
δ
= 0.5 ; T
mb
≤
98 °C;
see
Figure 1;
see
Figure 2
forward voltage
I
F
= 15 A; T
j
= 150 °C;
see
Figure 3
I
F
= 15 A; V
R
= 400 V;
dI
F
/dt = 500 A/µs; T
j
= 25 °C;
see
Figure 4
Conditions
Min
-
-
Typ
-
-
Max Unit
600
15
V
A
Specify Name
Static characteristics
V
F
-
1.4
2
V
Dynamic characteristics
t
rr
reverse recovery time
-
19
-
ns
NXP Semiconductors
BYC15-600
Hyperfast power diode
2. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
A
mb
cathode
anode
mounting base; cathode
mb
K
A
001aaa020
Simplified outline
Graphic symbol
1
2
SOD59 (TO-220AC)
3. Ordering information
Table 3.
Ordering information
Package
Name
BYC15-600
TO-220AC
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
Version
SOD59
Type number
4. Limiting values
Table 4.
Symbol
Specify Name
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward
current
storage temperature
junction temperature
T
mb
≤
100 °C; DC
square-wave pulse;
δ
= 0.5 ; T
mb
≤
98 °C;
see
Figure 1;
see
Figure 2
square-wave pulse;
δ
= 0.5 ; t
p
= 25 µs;
T
mb
≤
98 °C
t
p
= 10 ms; sine-wave pulse; T
j(init)
= 25 °C
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
= 25 °C
-
-
-
-
-
-
-
-40
-
600
600
500
15
30
200
220
150
150
V
V
V
A
A
A
A
°C
°C
Limiting values
Parameter
Conditions
Min
Max
Unit
In accordance with the Absolute Maximum Rating System (IEC 60134).
BYC15-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
2 of 11
NXP Semiconductors
BYC15-600
Hyperfast power diode
40
P
tot
(W)
30
2.2
2.8
20
4.0
1.9
003aac083
50
P
tot
(W)
40
0.5
30
0.2
0.1
20
003aac084
δ
=1
a = 1.57
10
10
0
0
5
10
I
F(AV)
(A)
15
0
0
6
12
18
I
F(AV)
(A)
24
a = form factor = I
F(RMS)
/ I
F(AV)
Fig 1.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
BYC15-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
3 of 11
NXP Semiconductors
BYC15-600
Hyperfast power diode
5. Thermal characteristics
Table 5.
Symbol
Specify Name
R
th(j-mb)
R
th(j-a)
thermal resistance from junction with heatsink compound
to mounting base
thermal resistance from junction in free air
to ambient
-
-
-
60
1.5
-
K/W
K/W
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
BYC15-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
4 of 11
NXP Semiconductors
BYC15-600
Hyperfast power diode
6. Characteristics
Table 6.
Symbol
V
F
Characteristics
Parameter
forward voltage
Conditions
I
F
= 30 A; T
j
= 150 °C; see
Figure 3
I
F
= 15 A; T
j
= 25 °C; see
Figure 3
I
F
= 15 A; T
j
= 150 °C; see
Figure 3
I
R
reverse current
V
R
= 500 V; T
j
= 100 °C
V
R
= 600 V; T
j
= 25 °C
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 15 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 100 °C; see
Figure 4
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/µs;
T
j
= 25 °C; see
Figure 4
I
F
= 15 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 25 °C; see
Figure 4
I
RM
peak reverse recovery
current
I
F
= 15 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 125 °C; see
Figure 4
I
F
= 15 A; V
R
= 400 V; dI
F
/dt = 50 A/µs;
T
j
= 125 °C; see
Figure 4
V
FR
forward recovery voltage
I
F
= 15 A; dI
F
/dt = 100 A/µs; T
j
= 25 °C;
see
Figure 5
-
-
-
-
-
-
32
35
19
9.5
3
8
40
55
-
12
7.5
11
ns
ns
ns
A
A
V
Min
-
-
-
-
-
Typ
1.7
1.9
1.4
1.1
12
Max
2.3
2.9
2
3
200
Unit
V
V
V
mA
µA
Static characteristics
50
I
F
(A)
40
003aac082
I
F
dl
F
dt
t
rr
30
time
20
(1)
(2)
(3)
10 %
Q
r
100 %
10
I
R
I
RM
001aab911
0
0
1
2
3
V
F
(V)
4
(1) T
j
= 150 °C; typical values
(2) T
j
= 150 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig 3.
Forward current as a function of forward
voltage
Fig 4.
Forward recovery definitions
BYC15-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
5 of 11
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