BAP65-05W
Silicon PIN diode
Rev. 2 — 27 September 2010
Product data sheet
1. Product profile
1.1 General description
Two planar PIN diodes in a SOT323 small SMD plastic package.
1.2 Features and benefits
Two elements in common cathode
configuration
High voltage, current controlled
RF resistor for RF switches
Low diode capacitance
Low diode forward resistance (low loss)
1.3 Applications
RF attenuators and switches
Bandswitch for TV tuners
Series diode for mobile communication
transmit/receive switch
2. Pinning information
Table 1.
Pin
1
2
3
Pinning
Description
anode (a
1
)
anode (a
2
)
common cathode
1
2
3
3
Simplified outline
Graphic symbol
1
2
sym136
3. Ordering information
Table 2.
Ordering information
Package
Name
BAP65-05W
-
Description
plastic surface-mounted package; 3 leads
Version
SOT323
Type number
NXP Semiconductors
BAP65-05W
Silicon PIN diode
4. Marking
Table 3.
Marking codes
Marking code
V6-
Type number
BAP65-05W
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
P
tot
T
stg
T
j
T
amb
Parameter
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
s
90
C
Conditions
Min
-
-
-
65
65
40
Max
30
100
240
+150
+150
+85
Unit
V
mA
mW
C
C
C
6. Thermal characteristics
Table 5.
Symbol
R
th j-s
Thermal characteristics
Parameter
thermal resistance from junction
to soldering point
Conditions
Typ
250
Unit
K/W
7. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol
V
F
I
R
C
d
Parameter
forward voltage
reverse leakage current
diode capacitance
Conditions
I
F
= 50 mA
V
R
= 20 V
V
R
= 0 V; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 3 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 1 mA; f = 100 MHz
I
F
= 5 mA; f = 100 MHz
I
F
= 10 mA; f = 100 MHz
I
F
= 100 mA; f = 100 MHz
s
21
2
isolation
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
0.9
-
0.7
0.575
0.525
0.425
1
0.65
0.56
0.35
9.3
5.3
3.5
Max
1.1
20
-
0.9
0.8
-
-
0.95
0.9
-
-
-
-
Unit
V
nA
pF
pF
pF
pF
dB
dB
dB
BAP65-05W
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 27 September 2010
2 of 9
NXP Semiconductors
BAP65-05W
Silicon PIN diode
Table 6.
Characteristics
…continued
T
j
= 25
C unless otherwise specified.
Symbol
s
21
2
Parameter
insertion loss
Conditions
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
s
21
2
insertion loss
I
F
= 5 mA; f = 900 MHz
I
F
= 5 mA; f = 1800 MHz
I
F
= 5 mA; f = 2450 MHz
s
21
2
insertion loss
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
s
21
2
insertion loss
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
L
charge carrier life time
when switched from
I
F
= 10 mA to I
R
= 6 mA;
R
L
= 100
;
measured at
I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
0.11
0.17
0.24
0.08
0.14
0.21
0.08
0.14
0.21
0.06
0.13
0.2
0.17
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
s
L
S
[1]
series inductance
-
1.4
-
nH
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
BAP65-05W
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 27 September 2010
3 of 9
NXP Semiconductors
BAP65-05W
Silicon PIN diode
10
r
D
(Ω)
mgw097
1000
C
d
(fF)
800
mgw098
600
1
400
200
10
−1
10
−1
1
10
I
F
(mA)
10
2
0
0
4
8
12
16
V
R
(V)
20
f = 100 MHz; T
j
= 25
C
f = 1 MHz; T
j
= 25
C
Fig 1.
Forward resistance as a function of forward
current; typical values
mgw099
(1)
(2)
Fig 2.
Diode capacitance as a function of reverse
voltage; typical values
mgw100
0
|s
21
|
2
(dB)
−0.1
(3)
0
|s
21
|
2
(dB)
−10
−0.2
(4)
−20
−0.3
−30
−0.4
−0.5
−40
0
1
2
f (GHz)
3
0
1
2
f (GHz)
3
(1) I
F
= 100 mA
(2) I
F
= 10 mA
(3) I
F
= 5 mA
(4) I
F
= 1 mA
Diode inserted in series with a 50
stripline circuit and
biased via the analyzer Tee network. T
amb
= 25
C.
Diode zero biased and inserted in series with a 50
stripline circuit. T
amb
= 25
C.
Fig 3.
Insertion loss (s
21
2
) of the diode in on-state as
a function of frequency; typical values
Fig 4.
Isolation (s
21
2
) of the diode in off-state as a
function of frequency; typical values
BAP65-05W
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 27 September 2010
4 of 9
NXP Semiconductors
BAP65-05W
Silicon PIN diode
8. Package outline
Plastic surface-mounted package; 3 leads
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
JEITA
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig 5.
BAP65-05W
Package outline SOT323
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 27 September 2010
5 of 9
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