BAP70-03
Silicon PIN diode
Rev. 6 — 7 March 2014
Product data sheet
1. Product profile
1.1 General description
Planar PIN diode in a SOD323 (SC-76) small SMD plastic package.
1.2 Features and benefits
High voltage current controlled RF resistor for attenuators
Low diode capacitance
Very low series inductance
1.3 Applications
RF attenuators
(SAT) TV
Car radio
2. Pinning information
Table 1.
Pin
1
2
Discrete pinning
Description
cathode
anode
Simplified outline
Graphic symbol
3. Ordering information
Table 2.
Ordering information
Name
BAP70-03
-
Description
plastic surface-mounted package; 2 leads
Version
SOD323
Type number Package
4. Marking
Table 3.
BAP70-03
Marking
Marking code
A9
Type number
NXP Semiconductors
BAP70-03
Silicon PIN diode
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
P
tot
T
stg
T
j
Parameter
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
Conditions
continuous voltage
continuous current
T
sp
= 90
C
Min
-
-
-
65
65
Max
50
100
500
+150
+150
Unit
V
mA
mW
C
C
6. Thermal characteristics
Table 5.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Typ
120
Unit
K/W
7. Characteristics
Table 6.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
V
F
I
R
C
d
Parameter
forward voltage
reverse current
diode capacitance
Conditions
I
F
= 50 mA
V
R
= 50 V
see
Figure 1;
f = 1 MHz;
V
R
= 0 V
V
R
= 1 V
V
R
= 5 V
V
R
= 20 V
r
D
diode forward resistance
see
Figure 2;
f = 100 MHz;
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
L
charge carrier life time
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
;
measured at
I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
-
-
-
-
-
77
40
5.4
1.4
1.25
100
50
7
1.9
-
s
-
-
-
-
570
400
270
200
-
-
-
250
fF
fF
fF
fF
Min
-
-
Typ
0.9
-
Max
1.1
100
Unit
V
nA
L
S
series inductance
-
1.5
-
nH
BAP70-03
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 6 — 7 March 2014
2 of 8
NXP Semiconductors
BAP70-03
Silicon PIN diode
f = 1 MHz; T
j
= 25
C.
f = 100 MHz; T
j
= 25
C.
Fig 1.
Diode capacitance as a function of reverse
voltage; typical values
Fig 2.
Diode forward resistance as a function of
forward current; typical values
BAP70-03
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 6 — 7 March 2014
3 of 8
NXP Semiconductors
BAP70-03
Silicon PIN diode
8. Package outline
Fig 3.
BAP70-03
Package outline SOD323
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 6 — 7 March 2014
4 of 8
NXP Semiconductors
BAP70-03
Silicon PIN diode
9. Abbreviations
Table 7.
Acronym
PIN
SMD
RF
SAT
Abbreviations
Description
P-type, Intrinsic, N-type
Surface Mounted Device
Radio Frequency
SATellite
10. Revision history
Table 8.
Revision history
Release date
20140307
Data sheet status
Product data sheet
Change notice
-
Supersedes
BAP70-03_N v.5
Document ID
BAP70-03 v.6
Modifications:
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Product data sheet
Product data sheet
Product data sheet
Preliminary data sheet
Preliminary data sheet
-
-
-
-
-
BAP70-03 v.4
BAP70-03 v.3
BAP70-03_N v.2
BAP70-03_N v.1
-
BAP70-03_N v.5
BAP70-03 v.4
(9397 750 12636)
BAP70-03 v.3
(9397 750 10094)
BAP70-03_N v.2
(9397 750 10081)
BAP70-03_N v.1
(9397 750 09579)
20070327
20040210
20020806
20020702
20020402
BAP70-03
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 6 — 7 March 2014
5 of 8
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