BAS21AVD
1 August 2013
SO
T4
57
High-voltage switching diodes
Product data sheet
1. General description
Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
•
High switching speed: t
rr
≤ 50 ns
Reverse voltage: V
R
≤ 200 V
Repetitive peak reverse voltage: V
RRM
≤ 250 V
Small SMD plastic package
Low capacitance: C
d
≤ 5 pF
AEC-Q101 qualified
Repetitive peak forward current: I
FRM
≤ 1 A
3. Applications
•
•
•
High-voltage switching in surface-mounted circuits
Automotive
Communication
4. Quick reference data
Table 1.
Symbol
Per diode
I
F
V
R
Per diode
I
R
t
rr
reverse current
reverse recovery time
V
R
= 200 V; T
amb
= 25 °C; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02
I
F
= 30 mA; I
R
= 30 mA; I
R(meas)
= 3 mA;
R
L
= 100 Ω; T
amb
= 25 °C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Quick reference data
Parameter
forward current
reverse voltage
Conditions
pulsed; t
p
≤ 300 µs; δ ≤ 0.02
[1]
Min
-
-
Typ
-
-
Max
200
200
Unit
mA
V
-
-
25
16
100
50
nA
ns
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NXP Semiconductors
BAS21AVD
High-voltage switching diodes
5. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
A1
A2
A3
K3
K2
K1
anode (diode 1)
anode (diode 2)
anode (diode 3)
cathode (diode 3)
cathode (diode 2)
cathode (diode 1)
1
2
3
Simplified outline
6
5
4
Graphic symbol
6
5
4
TSOP6 (SOT457)
1
2
3
006aab106
6. Ordering information
Table 3.
Ordering information
Package
Name
BAS21AVD
TSOP6
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Type number
7. Marking
Table 4.
Marking codes
Marking code
E6
Type number
BAS21AVD
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse voltage
reverse voltage
forward current
repetitive peak forward current
non-repetitive peak forward
current
pulsed; t
p
≤ 300 µs; δ ≤ 0.02
t
p
≤ 1 ms; δ ≤ 25 %
t
p
= 10 µs; T
j(init)
= 25 °C; square wave
t
p
= 100 µs; T
j(init)
= 25 °C; square wave
t
p
= 10 ms; T
j(init)
= 25 °C; square wave
[1]
Parameter
Conditions
Min
-
-
-
-
-
-
-
Max
250
200
200
1
16
8
2
Unit
V
V
mA
A
A
A
A
BAS21AVD
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© NXP N.V. 2013. All rights reserved
Product data sheet
1 August 2013
2 / 11
NXP Semiconductors
BAS21AVD
High-voltage switching diodes
Symbol
P
tot
T
stg
T
j
T
amb
Parameter
total power dissipation
storage temperature
junction temperature
ambient temperature
[1]
[2]
Conditions
T
amb
≤ 25 °C
[1]
[2]
Min
-
-
-65
-
-65
Max
250
295
150
150
150
Unit
mW
mW
°C
°C
°C
Per device; one diode loaded
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
2
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
[3]
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
500
425
140
Unit
K/W
K/W
K/W
Per device; one diode loaded
R
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Soldering point of cathode tab.
2
10. Characteristics
Table 7.
Symbol
Per diode
V
F
forward voltage
I
F
= 100 mA; T
amb
= 25 °C
I
F
= 200 mA; T
amb
= 25 °C
I
R
reverse current
V
R
= 200 V; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
V
R
= 200 V; T
j
= 150 °C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
I
F
= 30 mA; I
R
= 30 mA; T
amb
= 25 °C;
R
L
= 100 Ω; I
R(meas)
= 3 mA
-
-
-
-
0.6
16
100
5
50
µA
pF
ns
-
-
-
-
-
25
1
1.25
100
V
V
nA
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
BAS21AVD
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© NXP N.V. 2013. All rights reserved
Product data sheet
1 August 2013
3 / 11
NXP Semiconductors
BAS21AVD
High-voltage switching diodes
600
I
F
(mA)
400
(1)
(2)
mbg384
10
2
I
FSM
(A)
mle165
(3)
10
200
0
0
1
V
F
(V)
2
1
1
10
10
2
10
3
10
4
t
p
(µA)
10
5
(1) T
j
= 150 °C; typical values
(2) T
j
= 25 °C; typical values
(3) T
j
= 25 °C; maximum values
Fig. 1.
Forward current as a function of forward
voltage
10
2
I
R
(µA)
10
mbg381
Based on square wave currents.
T
j(init)
= 25 °C
Fig. 2.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
mle166
0.6
C
d
(pF)
0.5
1
(1)
(2)
0.4
10
- 1
0.3
10
- 2
0
100
T
j
(°C)
200
0.2
0
10
20
30
V
R
(V)
40
(1) V
R
= V
Rmax
; maximum values
(2) V
R
= V
Rmax
; typical values
Fig. 3.
Reverse current as a function of junction
temperature
Fig. 4.
f = 1 MHz; T
j
= 25 °C
Diode capacitance as a function of reverse
voltage; typical values
BAS21AVD
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© NXP N.V. 2013. All rights reserved
Product data sheet
1 August 2013
4 / 11
NXP Semiconductors
BAS21AVD
High-voltage switching diodes
300
V
R
(V)
200
mle167
300
I
F
(mA)
200
mbg442
100
100
0
0
50
100
150
200
T
amb
(°C)
0
0
100
T
amb
(°C)
200
FR4 PCB, standard footprint
Fig. 5.
Reverse voltage as a function of ambient
temperature; derating curve
Fig. 6.
FR4 PCB, standard footprint
Forward current as a function of ambient
temperature; derating curve
11. Test information
t
r
D.U.T.
R
S
= 50
Ω
V = V
R
+ I
F
× R
S
I
F
SAMPLING
OSCILLOSCOPE
R
i
= 50
Ω
mga881
t
p
t
+ I
F
trr
10 %
t
(1)
V
R
90 %
input signal
output signal
(1) I
R
= 3 mA
Fig. 7.
Reverse recovery time test circuit and waveforms
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors,
and is
suitable for use in automotive applications.
BAS21AVD
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
1 August 2013
5 / 11
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