BAS86
25 July 2012
Schottky barrier single diode
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a small hermetically sealed SOD80C glass Surface-Mounted Device
(SMD) package with tin-plated metal discs at each end. It is suitable for “automatic
placement” and as such it can withstand immersion soldering.
1.2 Features and benefits
•
Low forward voltage
•
High breakdown voltage
•
Guard ring protected
•
Hermetically sealed glass SMD package.
1.3 Applications
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Blocking diodes
1.4 Quick reference data
Table 1.
Symbol
I
F(AV)
V
R
V
F
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
[1]
Conditions
[1]
Min
-
-
Typ
-
-
-
Max
200
50
900
Unit
mA
V
mV
I
F
= 100 mA; T
amb
= 25 °C
-
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
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NXP Semiconductors
BAS86
Schottky barrier single diode
2. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K
A
cathode
[1]
anode
[1]
Simplified outline
k
a
Graphic symbol
K
A
aaa-003679
LLDS; MiniMelf (SOD80C)
The marking band indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
BAS86
LLDS;
MiniMelf
Description
hermetically sealed glass surface-mounted package; 2
connectors
Version
SOD80C
Type number
4. Marking
Table 4.
BAS86
Marking codes
Marking code
marking band
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
F(AV)
I
FRM
I
FSM
T
j
T
amb
T
stg
Parameter
reverse voltage
forward current
average forward current
repetitive peak forward current
non-repetitive peak forward
current
junction temperature
ambient temperature
storage temperature
[1]
[1]
Conditions
Min
-
-
-
-
-
-
-65
-65
Max
50
200
200
500
5
125
125
150
Unit
V
mA
mA
mA
A
°C
°C
°C
t
p
≤ 1 s; δ ≤ 0.5
t
p
= 10 ms; T
j(init)
= 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
BAS86
Product data sheet
25 July 2012
2/9
NXP Semiconductors
BAS86
Schottky barrier single diode
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
[1]
Conditions
in free air
[1]
Min
-
Typ
-
Max
320
Unit
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7.
Symbol
V
F
Characteristics
Parameter
forward voltage
Conditions
I
F
= 0.1 mA; T
amb
= 25 °C
I
F
= 1 mA; T
amb
= 25 °C
I
F
= 10 mA; T
amb
= 25 °C
I
F
= 30 mA; T
amb
= 25 °C
I
F
= 100 mA; T
amb
= 25 °C
I
R
C
d
t
rr
reverse current
diode capacitance
reverse recovery time
V
R
= 40 V; T
amb
= 25 °C; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02
f = 1 MHz; T
amb
= 25 °C; V
R
= 1 V
I
F
= 10 mA; I
R
= 10 mA; R
L
= 100 Ω;
I
R(meas)
= 1 mA; T
amb
= 25 °C
-
-
-
-
8
4
pF
ns
Min
-
-
-
-
-
-
Typ
-
-
-
-
-
-
Max
300
380
450
600
900
5
Unit
mV
mV
mV
mV
mV
µA
BAS86
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
25 July 2012
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NXP Semiconductors
BAS86
Schottky barrier single diode
10
3
I
F
(mA)
10
2
(1) (2) (3)
mld357
I
R
(nA)
10
4
10
3
10
5
mgc686
(1)
(2)
10
10
2
10
1
(3)
1
(1)
(2) (3)
10
- 1
0
0.4
0.8
V
F
(V)
1.2
10
- 1
0
10
20
30
40
V
R
(V)
50
(1) T
amb
= 125 °C
(2) T
amb
= 85 °C
(3) T
amb
= 25 °C
Fig. 1.
Forward current as a function of forward
voltage; typical values
12
C
d
(pF)
8
mgc687
(1) T
amb
= 85 °C
(2) T
amb
= 25 °C
(3) T
amb
= −40 °C
Fig. 2.
Reverse current as a function of reverse
voltage; typical values
250
mra540
I
F(AV)
(mA)
200
150
100
4
50
0
0
10
20
30
40
V
R
(V)
50
0
0
50
100
T
amb
(°C)
150
T
amb
= 25 °C; f = 1 MHz
Fig. 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig. 4.
FR4 PCB, standard footprint
Average forward current as a function of
ambient temperature; derating curve
8. Test information
BAS86
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© NXP B.V. 2012. All rights reserved
Product data sheet
25 July 2012
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NXP Semiconductors
BAS86
Schottky barrier single diode
t
r
D.U.T.
R
S
= 50
Ω
V = V
R
+ I
F
× R
S
I
F
SAMPLING
OSCILLOSCOPE
R
i
= 50
Ω
mga881
t
p
t
+ I
F
trr
10 %
t
(1)
V
R
90 %
input signal
output signal
(1) I
R
= 1 mA
Fig. 5.
Reverse recovery time test circuit and waveforms
9. Package outline
0.3
3.7
3.3
0.3
1.60
1.45
Dimensions in mm
06-03-16
Fig. 6.
LLDS; MiniMelf (SOD80C)
10. Soldering
4.55
4.30
2.30
solder lands
solder paste
2.25 1.70 1.60
solder resist
occupied area
Dimensions in mm
0.90
(2x)
sod080c
Fig. 7.
Reflow soldering footprint for SOD80C (LLDS; MiniMelf)
BAS86
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
25 July 2012
5/9
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