DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D087
BAT160 series
Schottky barrier double diodes
Product data sheet
Supersedes data of 1999 Mar 26
1999 Sep 20
NXP Semiconductors
Product data sheet
Schottky barrier double diodes
FEATURES
•
Low switching losses
•
Capability of absorbing very high
surge current
•
Fast recovery time
•
Guard ring protected
•
Plastic SMD package.
APPLICATIONS
•
Low power switched-mode power
supplies
•
Rectification
•
Polarity protection.
DESCRIPTION
Planar Schottky barrier double diodes
encapsulated in a SOT223 plastic
SMD package.
1
2
3
MSB002 - 1
BAT160 series
PINNING
BAT160
PIN
A
1
2
3
4
k
1
n.c.
k
2
a
1
, a
2
C
a
1
n.c.
a
2
k
1
, k
2
S
a
1
n.c.
k
2
k
1
, a
2
Fig.2
2 n.c.
MGL171
4
1
3
BAT160A diode
configuration (symbol).
page
4
4
1
3
2 n.c.
MGL172
Fig.3
Top view
BAT160C diode
configuration (symbol).
MARKING
TYPE NUMBER
BAT160A
BAT160C
BAT160S
MARKING
CODE
AT160A
AT160C
AT160S
4
Fig.1
Simplified outline
(SOT223) and pin
configuration.
1
2 n.c.
3
MGL173
Fig.4
BAT160S diode
configuration (symbol).
1999 Sep 20
2
NXP Semiconductors
Product data sheet
Schottky barrier double diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
V
R
I
F
I
FSM
I
RSM
T
stg
T
j
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
non-repetitive peak reverse current
storage temperature
junction temperature
t
p
= 8.3 ms; half sinewave;
JEDEC method
t
p
= 100
μs
−
−
−
−
PARAMETER
CONDITIONS
BAT160 series
MIN.
MAX.
UNIT
60
1
10
0.5
+150
150
V
A
A
A
°C
°C
−65
−
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.5
I
F
= 100 mA
I
F
= 1 A
I
F
= 2 A
I
R
reverse current
V
R
= 60 V; note 1; see Fig.6
V
R
= 60 V; T
j
= 100
°C;
note 1;
see Fig.6
C
d
Note
1. Pulse test: t
p
= 300
μs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT223 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
100
UNIT
K/W
diode capacitance
f = 1 MHz; V
R
= 4 V; see Fig 7
400
650
850
350
8
60
mV
mV
mV
μA
mA
pF
PARAMETER
CONDITIONS
MAX.
UNIT
1999 Sep 20
3
NXP Semiconductors
Product data sheet
Schottky barrier double diodes
GRAPHICAL DATA
BAT160 series
10
4
handbook, halfpage
IF
(mA)
10
3
MCD784
10
5
handbook, halfpage
IR
(μA)
10
4
MCD768
(1)
10
3
(2)
(3)
10
2
(2)
10
2
10
(3)
(4)
(4)
10
(1)
1
10
−
1
0
0.2
0.4
0.6
VF (V)
0.8
0
20
40
VR (V)
60
1
(1) T
amb
= 125
°C.
(2) T
amb
= 100
°C.
(3) T
amb
= 75
°C.
(4) T
amb
= 25
°C.
(1) T
amb
= 125
°C.
(2) T
amb
= 100
°C.
(3) T
amb
= 75
°C.
(4) T
amb
= 25
°C.
Fig.5
Forward current as a function of forward
voltage; typical values.
Fig.6
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
10
3
MCD766
Cd
(pF)
10
2
10
0
20
40
VR (V)
60
f = 1 MHz; T
amb
= 25
°C.
Fig.7
Diode capacitance as a function of reverse
voltage; typical values.
1999 Sep 20
4
NXP Semiconductors
Product data sheet
Schottky barrier double diodes
PACKAGE OUTLINE
BAT160 series
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
SC-73
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
1999 Sep 20
5
京公网安备 11010802033920号
EEWORLD
