NSS40300MZ4
Bipolar Power Transistors
40 V, 3.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (V
CE(sat)
) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
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PNP TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
C 2, 4
B1
E3
Schematic
4
3
SOT−223
CASE 318E
STYLE 1
1 2
•
Complement to NSS40301MZ4 Series
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Base Current − Continuous
Collector Current − Continuous
Collector Current − Peak
Total Power Dissipation
Total P
D
@ T
A
= 25°C (Note 1)
Total P
D
@ T
A
= 25°C (Note 2)
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
B
I
C
I
CM
P
D
2.0
0.80
T
J
, T
stg
– 55 to + 150
°C
Value
40
40
6.0
1.0
3.0
5.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
A
Y
W
40300
G
1
MARKING DIAGRAM
AYW
40300G
= Assembly Location
Year
= Work Week
= Specific Device Code
= Pb−Free Package
PIN ASSIGNMENT
4
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material.
2. Mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material.
B
1
C
2
E
3
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
1
September, 2013 − Rev. 3
Publication Order Number:
NSS40300MZ4/D
NSS40300MZ4
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Junction−to−Ambient on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
Junction−to−Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds
Symbol
R
qJA
R
qJA
T
L
Max
64
155
260
°C
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I
C
= 10 mAdc, I
B
= 0 Adc)
Emitter−Base Voltage (I
E
= 50
mAdc,
I
C
= 0 Adc)
Collector Cutoff Current (V
CB
= 40 Vdc)
Emitter Cutoff Current (V
BE
= 6.0 Vdc)
ON CHARACTERISTICS
(Note 3)
Collector−Emitter Saturation Voltage
(I
C
= 0.5 Adc, I
B
= 50 mAdc)
(I
C
= 1.0 Adc, I
B
= 20 mAdc)
(I
C
= 3.0 Adc, I
B
= 0.3 Adc)
Base−Emitter Saturation Voltage (I
C
= 1.0 Adc, I
B
= 0.1 Adc)
Base−Emitter On Voltage (I
C
= 1.0 Adc, V
CE
= 2.0 Vdc)
DC Current Gain
(I
C
= 0.5 Adc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 1.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance (V
CB
= 10 Vdc, f = 1.0 MHz)
Input Capacitance (V
EB
= 5.0 Vdc, f = 1.0 MHz)
Current−Gain − Bandwidth Product (Note 4)
(I
C
= 500 mA, V
CE
= 10 V, F
test
= 1.0 MHz)
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. f
T
= |h
FE
|
•
f
test
C
ob
C
ib
f
T
−
160
−
−
−
40
130
−
−
pF
pF
MHz
V
CE(sat)
−
−
−
V
BE(sat)
V
BE(on)
h
FE
200
175
100
−
−
−
−
350
−
−
−
−
−
−
−
−
0.070
0.150
0.400
1.0
0.9
Vdc
Vdc
−
Vdc
V
CEO(sus)
V
EBO
I
CBO
I
EBO
40
6.0
−
−
−
−
−
−
−
−
100
100
Vdc
Vdc
nAdc
nAdc
Symbol
Min
Typ
Max
Unit
2.5
P
D
, POWER DISSIPATION (W)
2.0
T
C
1.5
1.0
T
A
0.5
0
25
50
75
100
125
150
T
J
, TEMPERATURE (°C)
Figure 1. Power Derating
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2
NSS40300MZ4
TYPICAL CHARACTERISTICS
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.2
I
C
/I
B
= 10
V
BE(sat)
, EMITTER−BASE
SATURATION VOLTAGE (V)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
150°C
−40°C
I
C
/I
B
= 50
V
BE(sat)
, EMITTER−BASE
SATURATION VOLTAGE (V)
−40°C
25°C
150°C
25°C
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Saturation Voltage
350
C
obo
, OUTPUT CAPACITANCE (pF)
C
ibo
, INPUT CAPACITANCE (pF)
300
250
200
150
100
50
0
0
1
2
3
4
5
6
V
EB
, EMITTER BASE VOLTAGE (V)
T
J
= 25°C
f
test
= 1 MHz
100
Figure 9. Base−Emitter Saturation Voltage
80
T
J
= 25°C
f
test
= 1 MHz
60
40
20
0
0
5
10
15
20
25
30
35
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
200
I
C
, COLLECTOR CURRENT (A)
f
Tau
, CURRENT BANDWIDTH
PRODUCT (MHz)
180
160
140
120
100
80
60
40
20
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
T
J
= 25°C
f
test
= 1 MHz
V
CE
= 10 V
10
Figure 11. Output Capacitance
0.5 ms
1
10 ms
1 ms
0.1
100 ms
0.01
1
10
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
100
Figure 12. Current−Gain Bandwidth Product
Figure 13. Safe Operating Area
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4
Embedded System
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