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BC846ALT1G_15

Description
SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size113KB,13 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

BC846ALT1G_15 Overview

SMALL SIGNAL TRANSISTOR

BC846ALT1G_15 Parametric

Parameter NameAttribute value
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
terminal coatingMATTE Tin
Transistor typeUniversal small signal
BC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
Moisture Sensitivity Level: 1
ESD Rating − Human Body Model: >4000 V
ESD Rating
− Machine Model: >400 V
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC846
BC847, BC850
BC848, BC849
Collector−Base Voltage
BC846
BC847, BC850
BC848, BC849
Emitter−Base Voltage
BC846
BC847, BC850
BC848, BC849
Collector Current − Continuous
I
C
V
EBO
6.0
6.0
5.0
100
mAdc
V
CBO
80
50
30
Vdc
Symbol
V
CEO
65
45
30
Vdc
Value
Unit
Vdc
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XX M
G
G
1
XX
M
G
= Device Code
= Date Code*
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
Symbol
P
D
Max
225
Unit
mW
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1.8
R
qJA
P
D
556
300
mW/°C
°C/W
ORDERING INFORMATION
mW
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
2.4
R
qJA
T
J
, T
stg
417
−55 to
+150
mW/°C
°C/W
°C
1. FR− 5 = 1.0

0.75

0.062 in.
2. Alumina = 0.4

0.3

0.024 in 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2015
1
March, 2015 − Rev. 14
Publication Order Number:
BC846ALT1/D

BC846ALT1G_15 Related Products

BC846ALT1G_15 NSVBC850BLT1G NSVBC850CLT1G
Description SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR
Brand Name - ON Semiconductor ON Semiconduc
Is it lead-free? - Lead free Lead free
Maker - ON Semiconductor ON Semiconductor
package instruction - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Manufacturer packaging code - 318-08 318-08
Reach Compliance Code - compliant compli
Factory Lead Time - 4 weeks 4 weeks
Maximum collector current (IC) - 0.1 A 0.1 A
Collector-based maximum capacity - 4.5 pF 4.5 pF
Collector-emitter maximum voltage - 45 V 45 V
Configuration - SINGLE SINGLE
Minimum DC current gain (hFE) - 200 420
JEDEC-95 code - TO-236 TO-236
JESD-30 code - R-PDSO-G3 R-PDSO-G3
JESD-609 code - e3 e3
Humidity sensitivity level - 1 1
Number of components - 1 1
Number of terminals - 3 3
Maximum operating temperature - 150 °C 150 °C
Minimum operating temperature - -55 °C -55 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - NPN NPN
Maximum power dissipation(Abs) - 0.3 W 0.3 W
Guideline - AEC-Q101 AEC-Q101
surface mount - YES YES
Terminal surface - Tin (Sn) Tin (Sn)
Terminal form - GULL WING GULL WING
Terminal location - DUAL DUAL
Transistor component materials - SILICON SILICON
Nominal transition frequency (fT) - 100 MHz 100 MHz
VCEsat-Max - 0.6 V 0.6 V
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