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BC848

Description
100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size99KB,13 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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BC848 Overview

100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC848 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)110
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Base Number Matches1
BC846, SBC846, BC847,
SBC847, BC848 Series
General Purpose
Transistors
NPN Silicon
http://onsemi.com
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
COLLECTOR
3
1
BASE
2
EMITTER
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
Emitter-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
Collector Current − Continuous
Symbol
V
CEO
65
45
30
V
CBO
80
50
30
V
EBO
6.0
6.0
5.0
I
C
100
mAdc
V
V
Value
Unit
V
1
2
SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
XX MG
G
XX
= Specific Device Code
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 x 0.75 x 0.062 in.
Symbol
P
D
R
qJA
T
J
, T
stg
Max
150
833
−55 to
+150
Unit
mW
°C/W
°C
©
Semiconductor Components Industries, LLC, 2014
1
August, 2014 − Rev. 10
Publication Order Number:
BC846AWT1/D
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