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EN8022A

Description
Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single MP
File Size457KB,9 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet View All

EN8022A Overview

Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single MP

Ordering number : EN8022A
2SA2127
Bipolar Transistor
-50V, -2A, Low VCE(sat), PNP Single MP
Applications
http://onsemi.com
Voltage regulators, relay drivers, lamp drivers, electrical equipment
Adoption of MBIT process
High current capacity and wide ASO
Low saturation voltage
Features
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Ratings
--50
--50
-
-6
-
-2
-
-4
--400
1
150
-
-55 to +150
Unit
V
V
V
A
A
mA
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7520-002
6.0
5.0
4.7
Product & Package Information
• Package
: MP
• JEITA, JEDEC
: SC-51, TO-92(1-WATT), TO-226AE
• Minimum Packing Quantity : 1,000 pcs./box
2SA2127
Marking
A2127
LOT No.
Electrical Connection
2
8.5
1.0
0.5
0.6
0.5
3
3.0
0.5
1
14.0
1 2 3
1 : Emitter
2 : Collector
3 : Base
1.45
1.45
MP
Semiconductor Components Industries, LLC, 2013
September, 2013
60612 TKIM/21805EA TSIM TB-00000380 No.8022-1/9

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