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IRFHM830DPBF

Description
Compatible with Existing Surface Mount Techniques
File Size262KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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IRFHM830DPBF Overview

Compatible with Existing Surface Mount Techniques

IRFHM830DPbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
30
4.3
13
1.1
40
V
nC
Ω
A
3.3mm x 3.3mm PQFN
Q
g (typical)
R
G (typical)
I
D
(@T
c(Bottom)
= 25°C)
h
Applications
Synchronous MOSFET for Buck Converters
Features and Benefits
Features
Low R
DSon
(≤ 4.3mΩ)
Schottky intrinsic diode with low forward voltage
Benefits
Lower Conduction Losses
Lower switching losses
Low Thermal Resistance to PCB (<3.4°C/W)
100% Rg tested
Low Profile (< 1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
Increased Power Density
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHM830DTRPbF
IRFHM830DTR2PBF
Package Type
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
C(Bottom)
= 25°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
30
±20
20
16
40
40
160
2.8
37
Units
V
g
g
c
h
h
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
0.022
-55 to + 150
Notes

through
†
are on page 9
1
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
June 6, 2014

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