IRF7413PbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
30
0.011
52
13
V
Ω
nC
A
S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
Q
g (typical)
I
D
(@T
A
= 25°C)
6
5
Top View
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7413PbF-1
Package Type
SO-8
Standard Pack
Form
Tube/Bulk
Tape and Reel
Quantity
95
4000
Orderable Part Number
IRF7413PbF-1
IRF7413TRPbF-1
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
E
AS
dv/dt
T
J,
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max
30
± 20
13
9.2
58
2.5
0.02
260
5.0
-55 to +150
Units
V
c
A
W
mW/°C
mJ
V/ns
°C
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energency
Peak Diode Recovery dv/dt
d
e
Typ
–––
–––
Junction and Storage Temperature Range
Thermal Resistance Ratings
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Max
20
50
Units
°C/W
g
1
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2013 International Rectifier
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IRF7413PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min
30
–––
–––
–––
1.0
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ
Max Units
Conditions
–––
–––
0.034 –––
––– 0.011
––– 0.018
–––
3.0
–––
–––
–––
12
–––
25
––– -100
–––
100
52
79
6.1
9.2
16
23
–––
3.7
8.6
–––
50
–––
52
–––
46
–––
1800 –––
680
–––
240
–––
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 7.3A
Ω
V
GS
= 4.5V, I
D
= 3.7A
V V
DS
= V
GS
, I
D
= 250μA
S V
DS
= 10V, I
D
= 3.7A
V
DS
= 30V, V
GS
= 0V
μA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
nA
V
GS
= 20V
I
D
= 7.3A
nC V
DS
= 24V
V
GS
= 10V, See Fig. 6 and 9
Ω
V
DD
= 15V
I
D
= 7.3A
ns R
G
= 6.2
Ω
R
G
= 2.0Ω, See Fig. 10
V
GS
= 0V
pF V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
f
f
f
f
Source-Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
74
200
3.1
58
1.0
110
300
V
ns
nC
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 7.3A, V
GS
= 0V
T
J
= 25°C, I
F
= 7.3A
di/dt = 100A/μs
Ã
e
e
Repetitive rating; pulse width limited by
Starting T
J
= 25°C, L = 9.8mH
max. junction temperature. ( See fig. 11 )
I
SD
≤
7.3A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
R
G
= 25Ω, I
AS
=7.3A. (See Figure 12)
Surface mounted on FR-4 board
R
θ
is measured at T
J
approximately 90°C
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2013 International Rectifier
IRF7413PbF-1
100
I D , Drain-to-Source Current (A)
I D, Drain-to-Source Current (A)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
10
10
3.0V
3.0V
1
0.1
1
20μs PULSE WIDTH
T
J
= 25°C
A
10
1
0.1
1
20μs PULSE WIDTH
T
J
= 150°C
A
10
V DS , Drain-to-Source Voltage (V)
V DS Drain-to-Source Voltage (V)
,
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 7.3A
I
D
, Drain-to-Source Current (A)
1.5
T
J
= 150°C
T
J
= 25°C
10
1.0
0.5
1
3.0
3.5
V
DS
= 10V
20μs PULSE WIDTH
4.0
4.5
A
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100 120 140 160
A
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
3
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2013 International Rectifier
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRF7413PbF-1
3200
2800
2400
2000
1600
1200
800
400
0
1
C
oss
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
iss
C
oss
= C
ds
+ C
gd
20
I
D
= 7.3A
V
DS
= 24V
V
DS
= 15V
16
C, Capacitance (pF)
12
8
C
rss
4
10
100
A
0
0
10
20
30
FOR TEST CIRCUIT
SEE FIGURE 9
40
50
60
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 150°C
10
I
D
, Drain Current (A)
T
J
= 25°C
100
100us
10
1ms
1
0.4
1.2
2.0
2.8
V
GS
= 0V
A
3.6
1
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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Fig 8.
Maximum Safe Operating Area
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IRF7413PbF-1
Q
G
V
DS
V
GS
R
G
10V
R
D
10V
V
G
Q
GS
Q
GD
D.U.T.
+
-
V
DD
Charge
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 9a.
Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
Fig 10a.
Switching Time Test Circuit
V
DS
50KΩ
12V
.2μF
.3μF
90%
+
V
-
DS
D.U.T.
V
GS
3mA
10%
V
GS
t
d(on)
I
G
I
D
t
r
t
d(off)
t
f
Current Sampling Resistors
Fig 9b.
Gate Charge Test Circuit
100
Fig 10b.
Switching Time Waveforms
Thermal Response (Z
thJA
)
D = 0.50
0.20
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.1
1
10
100
10
0.1
0.0001
0.001
0.01
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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2013 International Rectifier
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November 19, 2013
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