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IRF7416PBF-1_15

Description
POWER, FET
Categorysemiconductor    Discrete semiconductor   
File Size246KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRF7416PBF-1_15 Overview

POWER, FET

IRF7416PBF-1_15 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeuniversal power supply
IRF7416PbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= -10V)
-30
0.020
61
-10
V
Ω
nC
A
S
1
2
3
4
8
7
A
D
D
D
D
S
S
G
Q
g (typical)
I
D
(@T
A
= 25°C)
6
5
Top View
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7416PbF-1
Package Type
SO-8
Standard Pack
Form
Tube/Bulk
Tape and Reel
Quantity
95
4000
Orderable Part Number
IRF7416PbF-1
IRF7416TRPbF-1
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
E
AS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Max.
-10
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
Units
A
W
W/°C
V
mJ
V/ns
°C
c
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
e
d
Thermal Resistance
R
θJA
Junction-to-Ambient
g
Parameter
Max.
50
Units
°C/W
1
www.irf.com
©
2013 International Rectifier
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