A Product Line of
Diodes Incorporated
ZXTP03200BZ
2 00 V PN P L OW V
C E ( s a t )
TRAN SIST OR IN SOT -89
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Features
•
•
•
•
•
•
•
•
•
•
BV
CEO
> -200V
BV
ECO
> -2V
Continuous current I
C(cont)
= 2A
V
CE(sat
< -160mV @ -1A
R
CE(sat)
=130mΩ
P
D
= 2.4W
2 Amps continuous current
Up to 5 Amps peak current
Very low saturation voltage
Enhanced switching performance
Mechanical Data
•
•
•
•
•
Case: SOT-89
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.052 grams (approximate)
Applications
•
DC-DC Convertors
SOT-89
Top View
Device symbol
Pin Configuration
Ordering Information
Product
ZXTP03200BZTA
Marking
1N2
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1000
Marking Information
1N2 = Product type Marking Code
ZXTP03200BZ
Document Number DS31902 Rev. 2 - 2
1 of 7
www.diodes.com
August 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP03200BZ
2 00 V PN P L OW V
C E ( s a t )
TRAN SIST OR IN SOT -89
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
I
CM
Value
-220
-200
-7
-2
-1
-5
Unit
V
V
V
A
A
A
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note a)
Base Current
Peak Pulse Current
Thermal Characteristics
Characteristic
Power Dissipation at T
A
= 25°C (Note a)
Linear derating factor
Power Dissipation at T
A
= 25°C (Note b)
Linear derating factor
Power Dissipation at T
A
= 25°C (Note c)
Linear derating factor
Power Dissipation at T
A
= 25°C (Note d)
Linear derating factor
Power Dissipation at T
A
= 25°C (Note e)
Linear derating factor
Junction to Ambient (Note a)
Junction to Ambient (Note b)
Junction to Ambient (Note c)
Junction to Ambient (Note d)
Junction to Lead (Note e)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
P
D
P
D
P
D
P
D
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JL
T
J,
T
STG
Value
1.1
8.8
1.8
14.4
2.4
19.2
4.46
35.7
38.7
309.6
117
68
51
28
3.23
-55 to +150
Unit
W
mW /°C
W
mW /°C
W
mW /°C
W
mW /°C
W
mW /°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C
a. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
b. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.
c. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions.
d. As (c) above measured at t<5 seconds
e. Junction to lead from collector Tab. Typical
ZXTP03200BZ
Document Number DS31902 Rev. 2 - 2
2 of 7
www.diodes.com
August 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP03200BZ
2 00 V PN P L OW V
C E ( s a t )
TRAN SIST OR IN SOT -89
Thermal Characteristics and Derating information
ZXTP03200BZ
Document Number DS31902 Rev. 2 - 2
3 of 7
www.diodes.com
August 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP03200BZ
2 00 V PN P L OW V
C E ( s a t )
TRAN SIST OR IN SOT -89
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note f)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note f)
Symbol
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
100
100
20
Min
-220
-220
-220
-7
Typ
-245
-245
-225
-8.4
<1
<1
195
179
50
5
-37
-120
-130
-160
-940
-840
31
105
21
18
680
75
Max
Unit
V
V
V
V
nA
µA
nA
Test Condition
I
C
= -100µA
I
C
= -1µA, R
BE
≤
1kΩ
I
C
= -10mA
I
E
= -100µA
V
CB
= -200V
V
CB
= -200V, T
amb
= 100°C
V
EB
= -6V
I
C
= -10mA, V
CE
= -5V
I
C
= -1A, V
CE
= -5V
I
C
= -2A, V
CE
= -5V
I
C
= -5A, V
CE
= -5V
I
C
= -100mA, I
B
= -10mA
I
C
= -500mA, I
B
= -25mA
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -400mA
I
C
= -2A, I
B
= -400mV
I
C
= -2A, V
CE
= -5V
V
CB
= -10V. f = 1MHz
V
CE
= -10V, I
C
= -100mA
f = 50MHz
V
CC
= -50V, I
C
= -1A
I
B1
= -I
B2
= -100mA
-50
-0.5
-10
300
Collector-Emitter Saturation Voltage (Note f)
Base-Emitter Saturation Voltage (Note f)
Base-Emitter Turn-On Voltage (Note f)
Output Capacitance (Note f)
Transition Frequency
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
V
CE(SAT)
V
BE(sat)
V
BE(ON)
C
obo
f
T
t
d
t
r
T
s
T
f
-50
-155
-160
-260
-1100
-1000
mV
mV
mV
mV
mV
mV
pF
MHz
ns
ns
ns
ns
f. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle
≤
2%
ZXTP03200BZ
Document Number DS31902 Rev. 2 - 2
4 of 7
www.diodes.com
August 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP03200BZ
2 00 V PN P L OW V
C E ( s a t )
TRAN SIST OR IN SOT -89
Typical Characteristics
ZXTP03200BZ
Document Number DS31902 Rev. 2 - 2
5 of 7
www.diodes.com
August 2009
© Diodes Incorporated
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