SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching.
FEATURES
・Low
Leakage Current.
・Repetitive
Peak Reverse Voltage : V
RRM
≦250V.
A
BAV23S
SILICON EPITAXIAL PLANAR DIODE
L
E
B
L
・Low
Capacitance : C
T
≦2pF.
2
G
H
3
1
Q
P
P
C
N
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Single diode loaded.
Forward Current
Double diode loaded.
t = 1μ
s
Surge Current
(Square wave)
Power Dissipation
Junction Temperature
Storage Temperature Range
t = 100μ
s
t = 10ms
P
D
T
j
T
stg
I
FSM
I
F
125
9
3
1.7
250*
150
-55½150
A
A
A
mW
℃
℃
SYMBOL RATING
V
RM
V
R
I
FM
250
200
625
225
mA
UNIT
V
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
K
M
J
D
3
V
mA
1. CATHODE 1
2. ANODE 2
3. ANODE 1/ CATHODE 2
2
1
SOT-23
Marking
Lot No.
Type Name
Note : * Device mounted on a FR4 Printed-Circuit Board (PCB)
JC
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Forward Voltage
SYMBOL
V
F
I
F
=200mA
V
R
=200V
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
V
R
=200V, T
j
=150℃
C
T
t
rr
V
R
=0V, f=1MHz
I
F
=10mA, I
R
=10mA, I
RM
=1mA
-
-
-
-
-
-
100
2
50
pF
ns
-
-
-
-
1.25
0.1
μ
A
TEST CONDITION
I
F
=100mA
MIN.
-
TYP.
-
MAX.
1.0
V
UNIT
2010. 11. 23
Revision No : 0
1/2
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