SEMICONDUCTOR
TECHNICAL DATA
SWITCHING TYPE POWER SUPPLY APPLICATIONS.
2
SMAB14
SCHOTTKY BARRIER TYPE DIODE
FEATURES
・Low
Profile Surface Mount Package.
・Low
Power Loss, High Efficiency.
・For
Use in Low Voltage, High Frequency inverters, Free
Wheeling, and Polarity Protection Applications.
A
D
H
APPLICATION
・Switching
Power Supply.
・DC/DC
Converter.
・Home
Appliances, Office Equipment.
・Telecommunication.
1
C
B
G
1. ANODE
2. CATHODE
DIM
A
B
C
D
E
F
G
H
MILLIMETERS
_
4.5 + 0.2
_
2.6 + 0.2
_
1.5 + 0.2
_
5.0 + 0.3
_
1.2 + 0.3
_
2.0 + 0.2
0 ~ 0.15
R 0.5
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Maximum Repetitive Peak Reverse Voltage
Average Output Rectitifed Current
Peak One Cycle Surge Forward Current
(Non-Repetitive 60Hz)
Junction Temperature
Storage Temperature Range
SYMBOL
V
RRM
I
O
I
FSM
T
j
T
stg
RATING
40
1
40
-55½150
-55½150
UNIT
V
A
A
℃
℃
SMA
Marking
Type Name
B14
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse Current
SYMBOL
V
FM
I
RRM
R
th(j-1)
Thermal Resistance
R
th(j-a)
TEST CONDITION
I
FM
=1.0A
V
RRM
=Rated
Junction to lead
Junction to ambient
(on alumina substrate)
MIN.
-
-
-
-
TYP.
-
-
-
-
MAX.
0.5
0.2
23
℃/W
108
UNIT
V
mA
2012. 7. 24
Revision No : 5
F
E
E
1/2
SMAB14
3
FORWARD CURRENT I
F
(A)
AVERAGE FORWARD POWER DISSIPATION
P
F(AV)
(W)
I
F
- V
F
P
F(AV)
- I
F(AV)
0.5
0.4
180
RECTANGULAR
WAVEFORM
T
j
=125 C
25 C
1
0.5
0.3
0.3
0.2
0.1
0
0
360
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.2
0.4
0.6
0.8
1.0
1.2
FORWARD VOLTAGE V
F
(V)
AVERAGE FORWARD CURRENT I
F(AV)
(A)
MAXIMUM ALLOWABLE TEMPERATURE
Ta MAX ( C)
SURGE FORWARD CURRENT
(NON - REPETITIVE)
PEAK SURGE FORWARD CURRENT
I
FSM
(A)
60
T
j
=25 C
Ta - I
F(AV)
140
120
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
180
360
50
40
30
20
10
0
1
3
5
10
30
f=60Hz
RECTANGULAR
WAVEFORM
50
100
NUMBER OF CYCLES AT 60Hz
AVERAGE FORWARD CURRENT I
F(AV)
(A)
2012. 7. 24
Revision No : 5
2/2
stm32/stm8
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