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SZA3044ZPCK-EVB1

Description
2700 MHz - 3800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size479KB,11 Pages
ManufacturerRF Micro Devices (Qorvo)
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SZA3044ZPCK-EVB1 Overview

2700 MHz - 3800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

SZA3044ZPCK-EVB1 Parametric

Parameter NameAttribute value
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum input power15 dBm
Maximum operating frequency3800 MHz
Minimum operating frequency2700 MHz
Processing package description4 × 4 MM, green, plastic, QFN-20
stateACTIVE
Maximum voltage standing wave ratio10
structureCOMPONENT
terminal coatingMATTE Tin
Impedance characteristics50 ohm
Microwave RF TypeWIDE band MEDIUM POWER
SZA3044Z
2.7GHz to
3.8GHz 5 V
1W
SZA3044Z
2.7GHz to 3.8GHz 5V 1W
POWER AMPLIFIER
Package: QFN, 4mmx4mm
Product Description
RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor
(HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT
amplifier is made with InGaP on GaAs device technology and fabricated with
MOCVD for an ideal combination of low cost and high reliability. This product is spe-
cifically designed as a final or driver stage for 802.16 equipment in the 3.3GHz to
3.8GHz bands. It can run from a 3V to 6V supply. Optimized on-chip impedance
matching circuitry provides a 50 nominal RF input impedance. The external out-
put match and bias adjustability allows load line optimization for other applications
or over narrower bands. It features an output power detector,
Optimum Technology
on/off power control and high RF overdrive robustness. This
Matching® Applied
product is available in a RoHS Compliant and Green package
GaAs HBT
with matte tin finish, designated by the “Z” package suffix.
GaAs MESFET
Features
P
1dB
=31dBm at 5V
802.11a 54Mb/s 2.5% EVM Per-
formance
P
OUT
=24dBm, VCC=5V, 340mA,
PAE 14.5%
P
OUT
=25dBm, VCC=6V, 365mA,
PAE 14.5%
On-Chip Output Power Detector
Robust - Survives RF Input
Power=+15dBm
On Chip ESD Protection Class 2
(2000V)
Power Up/Down Control <1s
Pin Compatible With SZA-2044
and SZA-5044
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Applications
802.16 WiMAX Driver or Output
Stage
Fixed Wireless, WLL
Parameter
Frequency of Operation
Output Power at 1dB Compression
Small Signal Gain
Output power
Third Order Suppression
Noise Figure
Worst Case Input Return Loss
Worst Case Output Return Loss
Quiescent Current
[1]
Min.
2700
29.5
28.5
22.0
22.0
Specification
Typ.
31.0
30.0
24.0
24.0
24.0
-38.5
5.0
15.0
10.0
205
Max.
3800
Unit
MHz
dBm
dBm
dB
dB
dBm
dBc
dB
dB
dB
mA
mA
uA
°C/W
3.3GHz
Condition
26.0
26.0
-35.5
12.0
7.0
170
240
100.0
Power Up Control Current
2.7
Off V
CC
Leakage Current
10.0
Thermal Resistance
22
Test Conditions: Z
0
=50, V
CC
=5V, I
Q
=205mA, T
BP
=30°C
3.6GHz
3.4GHz
3.6GHz
3.4GHz, 2.5% EVM 802.11a 54Mb/s
3.6GHz, P
OUT
=20dBm per tone
3.6GHz
3.3GHz to 3.8GHz
3.3GHz to 3.6GHz
V
CC
=5V
V
PC
=5V, I
VPC1
+I
VPC2
V
PC
=0V
junction - lead
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS150303
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 11

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Description 2700 MHz - 3800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2700 MHz - 3800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2700 MHz - 3800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2700 MHz - 3800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Maximum operating temperature 85 Cel 85 Cel 85 Cel 85 Cel
Minimum operating temperature -40 Cel -40 Cel -40 Cel -40 Cel
Maximum input power 15 dBm 15 dBm 15 dBm 15 dBm
Maximum operating frequency 3800 MHz 3800 MHz 3800 MHz 3800 MHz
Minimum operating frequency 2700 MHz 2700 MHz 2700 MHz 2700 MHz
Processing package description 4 × 4 MM, green, plastic, QFN-20 4 × 4 MM, green, plastic, QFN-20 4 × 4 MM, green, plastic, QFN-20 4 × 4 MM, green, plastic, QFN-20
state ACTIVE ACTIVE ACTIVE ACTIVE
Maximum voltage standing wave ratio 10 10 10 10
structure COMPONENT COMPONENT COMPONENT COMPONENT
terminal coating MATTE Tin MATTE Tin MATTE Tin MATTE Tin
Impedance characteristics 50 ohm 50 ohm 50 ohm 50 ohm
Microwave RF Type WIDE band MEDIUM POWER WIDE band MEDIUM POWER WIDE band MEDIUM POWER WIDE band MEDIUM POWER
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