RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) ampli-
fier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an
ideal combination of low cost and high reliability. This product is specifically designed as a final
or driver stage for 802.16 equipment in the 3.3GHz to 3.8GHz bands. It can run from a 3V to
6V supply. The external output match and bias adjustability allows load line optimization for
other applications or over narrower bands. It features an output power detector, on/off power
control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by
switching the second stage Power up/down control. This product features a RoHS compliant
and Green package with matte tin finish, designated by the ‘Z’ suffix.
Optimum Technology
Matching® Applied
Features
P
1dB
=33.5dBm at 5V
Three Stages of Gain:34dB
802.11g 54Mb/s Class AB Per-
formance
P
OUT
=26dBm at 2.5% EVM, V
CC
5V,730mA
Active Bias with Adjustable Cur-
rent
On-Chip Output Power Detector
Low Thermal Resistance
Power Up/Down Control <1μs
Attenuator Step 20dB at
V
PC2
=0V
Class 1B ESD Rating
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Applications
802.16 WiMAX Driver or Output
Stage
Fixed Wireless, WLL
Condition
Parameter
Frequency of Operation
Output Power at 1dB Compression
Gain
Output power
Third Order Suppression
Noise Figure
Worst Case Input Return Loss
Worst Case Output Return Loss
Supply voltage range
Output Voltage Range
Quiescent Current
Min.
3300
32.5
Specification
Typ.
33.5
34.0
26.0
-38.0
5.0
14.0
9.0
5.0
0.9 to 2.2
600
Max.
3800
Unit
MHz
dBm
dBm
dBm
dBc
dB
dB
dB
V
V
mA
-33.0
11.0
6.0
3.0
540
3.5GHz
@ P
OUT
=26dBm-3.5GHz
@ 2.5% EVM 802.11g 54Mb/s - 3.5GHz
P
OUT
=23dBm per tone - 3.5GHz
@ 3.6GHz
3.3GHz to 3.8GHz
3.3GHz to 3.8GHz
for P
OUT
=10dBm to 30dBm
V
CC
=5V
V
PC
=5V, I
VPC1
+I
VPC2
+I
VPC3
V
CC
=5V, V
PC
=0V
junction - lead
6.0
660
Power Up Control Current
5.0
mA
VCC Leakage Current
0.1
mA
Thermal Resistance
12.0
°C/W
Test Conditions: 3.3GHz to 3.8GHz App circuit, Z
0
=50Ω, V
CC
=5V, I
Q
=600mA, T
BP
=30°C
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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