A Product Line of
Diodes Incorporated
ZXTD717MC
DUAL 12V PNP LOW SATURATION TRANSISTORS
Features and Benefits
•
•
•
•
•
•
•
•
•
•
•
•
BV
CEO
> -12V
I
C
= -4A Continuous Collector Current
Low Saturation Voltage (-140mV @ -1A)
R
SAT
= 60 mΩ for a low equivalent On-Resistance
h
FE
specified up to -10A for a high current gain hold up
Dual NPN saving footprint and component count
Low profile 0.8mm high package for thin applications
R
θJA
efficient, 40% lower than SOT26
2
6mm footprint, 50% smaller than TSOP6 and SOT26
Lead-Free, RoHS Compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
•
Case: DFN3020B-8
Case material: Molded Plastic. “Green” Molding Compound.
Terminals: Pre-Plated NiPdAu leadframe.
Nominal package height: 0.8mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.013 grams (approximate)
Applications
•
•
•
•
DC-DC Converters
Charging circuits
Power switches
Motor drive
DFN3020B-8
C2
C1
C2
C2
C1
C1
B2
B1
E2
C2
C1
B2
E1
B1
Pin 1
E2
Top View
Bottom View
PNP Transistor
Equivalent Circuit
E1
PNP Transistor
Bottom View
Pin-Out
Ordering Information
Product
ZXTD717MCTA
Notes:
Marking
D11
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
D11
D11 = Product type marking code
Top view, dot denotes pin 1
ZXTD717MC
Document Number DS31934 Rev. 3 - 2
1 of 7
www.diodes.com
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTD717MC
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
(Notes 3 & 6)
(Notes 4 & 6)
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
Value
-20
-12
-7
-12
-4
-4.4
1
Unit
V
A
Thermal Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
(Notes 3 & 6)
Power Dissipation
Linear Derating Factor
(Notes 4 & 6)
P
D
(Notes 5 & 6)
(Notes 5 & 7)
(Notes 3 & 6)
(Notes 4 & 6)
(Notes 5 & 6)
(Notes 5 & 7)
(Notes 6 & 8)
Symbol
Value
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
51.0
111
73.5
17.1
-55 to +150
Unit
W
mW/°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
R
θ
JA
R
θ
JL
T
J
, T
STG
°C/W
°C
3. For a dual device surface mounted on 28mm x 28mm (8cm
2
) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
4. Same as note (3), except the device is measured at t <5 sec.
5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm
2
) FR4 PCB with high coverage of single sided 1oz copper.
6. For a dual device with one active die.
7. For dual device with 2 active die running at equal power.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
ZXTD717MC
Document Number DS31934 Rev. 3 - 2
2 of 7
www.diodes.com
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTD717MC
Thermal Characteristics
2.0
Limited
Max Power Dissipation (W)
I
C
Collector Current (A)
10
V
CE(SAT)
10sqcm 1oz Cu
Two active die
1.5
1
DC
1s
100ms
10ms
8sqcm 2oz Cu
One active die
Single Pulse, T
amb
=25°C
8sqcm 2oz Cu
One active die
10sqcm 1oz Cu
One active die
1.0
0.1
1ms
100us
0.5
0.01
0.1
0.0
0
25
50
75
100
125
150
1
10
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
225
80
60
D=0.5
8sqcm 2oz Cu
One active die
Derating Curve
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
200
175
150
125
100
75
50
25
0
0.1
1
2oz Cu
One active die
1oz Cu
One active die
1oz Cu
Two active die
40
20
D=0.2
Single Pulse
D=0.05
D=0.1
2oz Cu
Two active die
0
100µ
1m
10m 100m
1
10
100
1k
10
100
Pulse Width (s)
Board Cu Area (sqcm)
Transient Thermal Impedance
3.5
T
amb
=25°C
T
j max
=150°C
Continuous
2oz Cu
One active die
2oz Cu
Two active die
Thermal Resistance v Board Area
P
D
Dissipation (W)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1oz Cu
Two active die
1oz Cu
One active die
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ZXTD717MC
Document Number DS31934 Rev. 3 - 2
3 of 7
www.diodes.com
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTD717MC
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
Min
-20
-12
-7
-
-
-
300
300
180
60
45
-
-
-
-
-
-
-
-
100
-
-
Typ
-35
-25
-8.5
-
-
-
475
450
275
100
70
-10
-100
-100
-195
-240
-0.87
-0.97
21
110
70
130
Max
-
-
-
-100
-100
-100
-
-
-
-
-
-17
-140
-150
-300
-310
-0.96
-1.07
30
-
-
-
Unit
V
V
V
nA
nA
nA
-
-
-
-
-
mV
mV
mV
mV
mV
V
V
pF
MHz
ns
ns
Test Condition
I
C
= -100µA
I
C
= -10mA
I
E
= -100µA
V
CB
= -16V
V
EB
= -6V
V
CES
= -10V
I
C
= -10mA, V
CE
= -2V
I
C
= -100mA, V
CE
= -2V
I
C
= -2.5A, V
CE
= -2V
I
C
= -8A, V
CE
= -2V
I
C
= -10A, V
CE
= -2V
I
C
= -0.1A, I
B
= -10mA
I
C
= -1A, I
B
= -10mA
I
C
= -1.5A, I
B
= -50mA
I
C
= -3A, I
B
= -50mA
I
C
= -4A, I
B
= -150mA
I
C
= -4A, V
CE
= -2V
I
C
= -4A, I
B
= -150mA
V
CB
= -10V. f = 1MHz
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
V
CC
= -6V, I
C
= -2A
I
B1
= I
B2
= -50mA
Static Forward Current Transfer Ratio (Note 9)
h
FE
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
Base-Emitter Turn-On Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Output Capacitance
Transition Frequency
Turn-on Time
Turn-off Time
Notes:
V
BE(on)
V
BE(sat)
C
obo
f
T
t
on
t
off
9. Measured under pulsed conditions. Pulse width
≤
300 µs. Duty cycle
≤
2%
ZXTD717MC
Document Number DS31934 Rev. 3 - 2
4 of 7
www.diodes.com
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTD717MC
Typical Electrical Characteristics
0.25
Tamb=25°C
I
C
/I
B
=50
100m
0.20
V
CE(SAT)
(V)
V
CE(SAT)
(V)
I
C
/I
B
=100
0.15
0.10
0.05
0.00
1m
100°C
25°C
-55°C
10m
I
C
/I
B
=50
I
C
/I
B
=10
1m
1m
10m
100m
1
10
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
V
CE(SAT)
v I
C
1.4
1.2
100°C
V
CE
=2V
V
CE(SAT)
v I
C
630
1.0
I
C
/I
B
=50
V
BE(SAT)
(V)
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
10
-55°C
25°C
450
360
270
180
90
0
Typical Gain (h
FE
)
540
Normalised Gain
0.8
-55°C
0.6
25°C
100°C
0.4
1m
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
V
BE(SAT)
v I
C
1.0
0.8
V
CE
=2V
V
BE(ON)
(V)
-55°C
0.6
25°C
0.4
0.2
1m
100°C
10m
100m
1
10
I
C
Collector Current (A)
V
BE(ON)
v I
C
ZXTD717MC
Document Number DS31934 Rev. 3 - 2
5 of 7
www.diodes.com
December 2010
© Diodes Incorporated
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