A Product Line of
Diodes Incorporated
ZXTN10150DZ
150V NPN LED DRIVING TRANSISTOR IN SOT89
Features
•
•
•
•
•
•
BV
CEO
> 150V
h
FE
> 100 for I
C
= 150mA, V
CE
= 0.25V
I
C (cont)
= 1A
Lead Free, RoHS Compliant (Note 1)
Halogen and Antimony Free "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
Case: SOT-89
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.008 grams (Approximate)
Applications
•
LED TV backlight
SOT89
C
E
B
C
C
B
E
Top View
Device symbol
Pinout – top view
Ordering Information
Product
ZXTN10150DZTA
Notes:
Marking
1R4
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1000
1. No purposefully added lead.
2. “Green” devices, Halogen and Antimony Free, Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
1R4
1R4 - Product Type Marking Code
ZXTN10150DZ
Document Number: DS35096 Rev: 1 - 2
1 of 7
www.diodes.com
November 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN10150DZ
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current (Note 4)
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
150
150
7
1
3
500
Unit
V
V
V
A
A
mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
1.5
83
6.36
-55 to +150
Unit
W
°C/W
°C/W
°C
3. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle
≤
2%.
ZXTN10150DZ
Document Number: DS35096 Rev: 1 - 2
2 of 7
www.diodes.com
November 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN10150DZ
Thermal Characteristics and Derating information
Max Power Dissipation (W)
I
C
Collector Current (A)
V
CE(sat)
Limited
1.5
1
DC
1s
100ms
10ms
Single Pulse
T
amb
=25°C
1ms
100µs
1.0
100m
0.5
10m
100m
1
10
100
0.0
0
25
50
75
100
125
150
175
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
90
Derating Curve
100
Single Pulse
T
amb
=25°C
Thermal Resistance (°C/W)
70
60
50
40
30
20
10
0
100µ
1m
10m 100m
1
D=0.2
D=0.05
D=0.1
Single Pulse
D=0.5
Maximum Power (W)
1k
80
T
amb
=25°C
10
10
100
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZXTN10150DZ
Document Number: DS35096 Rev: 1 - 2
3 of 7
www.diodes.com
November 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN10150DZ
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 5)
Base-Emitter Turn-On Voltage (Note 5)
Output Capacitance
Current Gain-Bandwidth Product
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
Notes:
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
BE(on)
C
OBO
f
t
t
(d)
t
(r)
t
(s)
t
(f)
t
(s)
t
(f)
Min
150
150
7
-
-
200
60
100
-
-
-
-
-
-
-
-
-
Typ
300
175
8.3
-
-
450
180
150
0.701
10
135
625
562
2465
289
461
52
Max
-
-
-
50
50
-
-
-
Unit
V
V
V
nA
nA
-
V
pF
MHz
ns
ns
ns
ns
ns
ns
0.95
-
-
-
-
-
-
-
-
Test Condition
I
C
= 100µA
I
C
= 10mA
I
E
= 100µA
V
CB
= 150V
V
EB
= 7V
I
C
= 30mA, V
CE
= 5V
I
C
= 85mA, V
CE
= 0.20V
I
C
= 150mA, V
CE
= 0.25V
I
C
= 150mA, V
CE
= 0.25V
V
CB
= 10V, f = 1MHz
V
CB
= 10V, Ic = 10mA,
f = 100MHz
V
CC
= 110V, I
C
= 150mA,
-I
B2
= 1.5mA, V
CE
(
ON
) = 0.25V
V
CC
= 110V, I
C
= 150mA,
-I
B2
= 1.5mA, V
CE
(
ON
) = 4V
5. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle
≤
2%
ZXTN10150DZ
Document Number: DS35096 Rev: 1 - 2
4 of 7
www.diodes.com
November 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN10150DZ
Typical Characteristics
1
Tamb=25°C
I
C
/I
B
=100
I
C
/I
B
=50
I
C
/I
B
=20
V
CE(sat)
(V)
I
C
/I
B
=20
V
CE(sat)
(V)
0.1
25°C
125°C
100°C
100m
I
C
/I
B
=10
-55°C
10m
1m
10m
100m
1
0.0
1m
10m
100m
1
I
C
Collector Current (A)
I
C
Collector Current (A)
V
CE(sat)
v I
C
Typical Gain (hFE)
500
400
300
200
100
-55°C
125°C
V
CE
=0.25V
V
CE(sat)
v I
C
1.0
0.8
0.6
0.4
85°C
125°C
I
C
/I
B
=20
25°C
-55°C
25°C
0
100µ
V
BE(sat)
(V)
1m
10m
100m
1
85°C
0.2
1m
10m
100m
1
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
1.2
V
CE
=0.25V
25°C
V
BE(sat)
v I
C
30
25
f = 1MHz
Capacitance (pF)
1.0
-55°C
20
15
10
5
0
100m
1
10
100
Cobo
V
BE(on)
(V)
0.8
0.6
0.4
85°C
125°C
0.2
1m
10m
100m
1
I
C
Collector Current (A)
Voltage(V)
V
BE(on)
v I
C
Capacitance v Voltage
ZXTN10150DZ
Document Number: DS35096 Rev: 1 - 2
5 of 7
www.diodes.com
November 2010
© Diodes Incorporated
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