A Product Line of
Diodes Incorporated
ZXTN4004Z
150V NPN LED DRIVING TRANSISTOR IN SOT89
Features
BV
CEO
> 150V
I
C
= 1A High Continuous Current
h
FE
> 100 for I
C
= 150mA, V
CE
= 0.25V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT89
Case Material: Molded Plastic. “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads; Solderable per
MIL-STD-202, Method 208
Weight: 0.055 grams (Approximate)
Applications
LED TV Backlight
SOT89
C
E
B
C
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Notes 4 & 5)
Product
ZXTN4004ZTA
ZXTN4004ZQTA
Notes:
Compliance
AEC-Q101
Automotive
Marking
1R8
1R8
Reel size (inches)
7
7
Tape width (mm)
12
12
Quantity per reel
1,000 units
1,000 units
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT89
1R8 = Product type Marking Code
ZXTN4004Z
Document Number: DS35457 Rev: 2 - 2
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© Diodes Incorporated
A Product Line of
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ZXTN4004Z
Absolute Maximum Ratings
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
200
150
7
1
3
500
Unit
V
V
V
A
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
(Note 6)
(Note 7)
(Note 8)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
P
D
Value
1
1.5
2.0
125
83
60
13
-55 to +150
Unit
W
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
R
θJA
R
θJL
T
J,
T
STG
°C/W
°C/W
°C
ESD Ratings
(Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 6, except the device is mounted on 50mm x 50mm 1oz copper.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN4004Z
Document Number: DS35457 Rev: 2 - 2
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Thermal Characteristics and Derating Information
Max Power Dissipation (W)
Thermal Resistance (°C/W)
1.0
0.8
0.6
0.4
0.2
0.0
120
100
80
D=0.5
60
40
20
0
100µ
1m
10m 100m
1
D=0.2
Single Pulse
D=0.05
D=0.1
0
25
50
75
100
125
150
10
100
1k
Temperature (°C)
Pulse Width (s)
Derating Curve
100
Single Pulse. T
amb
=25°C
Transient Thermal Impedance
Max Power Dissipation (W)
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
Thermal Resistance (°C/W)
140.0
3
Maximum Power (W)
T
amb
=25°C
120.0
100.0
80.0
1oz copper
2oz copper
2
1oz copper
1
60.0
40.0
2oz copper
0
500
1000
1500
2000
2500
0
T
amb
=25°C
0
500
1000
1500
2000
2500
Copper Area (sqmm)
Copper Area (sqmm)
ZXTN4004Z
Document Number: DS35457 Rev: 2 - 2
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Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Symbol
BV
CEO
BV
CBO
I
CBO
I
CES
I
EBO
h
FE
V
BE(on)
V
CE(sat)
t
(d)
t
(r)
t
(s)
t
(f)
t
(s)
t
(f)
Min
150
200
-
-
-
200
60
100
-
-
-
-
-
-
-
-
Typ
175
310
<1
<1
<1
-
-
-
Characteristic
Collector-Emitter Breakdown Voltage (Note 11)
Collector-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Static Forward Current Transfer Ratio (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
Collector-Emitter Saturation Voltage (Note 11)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
Note:
Max
-
-
50
50
50
-
-
-
Unit
V
V
nA
nA
nA
-
V
V
ns
ns
ns
ns
ns
ns
0.71
-
512
426
3413
321
65
294
0.95
0.25
-
-
-
-
-
-
Test Condition
I
C
= 10mA
I
C
= 100µA
V
CB
= 150V
V
CE
= 150V
V
EB
= 7V
I
C
= 30mA, V
CE
= 5V
I
C
= 85mA, V
CE
= 0.20V
I
C
= 150mA, V
CE
= 0.25V
I
C
= 150mA, V
CE
= 0.25V
I
C
= 100mA, I
B
= 5mA
V
CC
= 120V, I
C
= 150mA,
-I
B2
= 1.5mA, V
CE
(
ON
) = 0.25V
V
CC
= 120V, I
C
= 150mA,
-I
B2
= 1.5mA, V
CE
(
ON
) = 4V
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
1.0
700
125°C
85°C
V
CE
=0.25V
V
CE
=0.25V
25°C
-55°C
Typical Gain (h
FE
)
600
0.8
400
300
200
100
V
BE(on)
(V)
500
25°C
0.6
-55°C
0.4
85°C
125°C
0
100µ
1m
10m
100m
1
0.2
100µ
1m
10m
100m
1
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
30
25
V
BE(on)
v I
C
f = 1MHz
Capacitance (pF)
20
15
10
5
0
100m
1
10
100
Cobo
Voltage(V)
Capacitance v Voltage
ZXTN4004Z
Document Number: DS35457 Rev: 2 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D1
00
0.2
R
c
E
H
B1
B
e
L
D2
8°
(4X
)
H1
A
L1
D
z
E2
SOT89
Dim Min Max
Typ
A
1.40 1.60
1.50
B
0.50 0.62
0.56
B1
0.42 0.54
0.48
c
0.35 0.43
0.38
D
4.40 4.60
4.50
D1
1.62 1.83 1.733
D2
1.61 1.81
1.71
E
2.40 2.60
2.50
E2
2.05 2.35
2.20
e
-
-
1.50
H
3.95 4.25
4.10
H1
2.63 2.93
2.78
L
0.90 1.20
1.05
L1
0.327 0.527 0.427
z
0.20 0.40
0.30
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2
Dimensions
Y1
Y4
X
Y3
G
Y
Y2
X1
C
C
G
X
X1
X2
Y
Y1
Y2
Y3
Y4
Value
(in mm)
1.500
0.244
0.580
0.760
1.933
1.730
3.030
1.500
0.770
4.530
Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device
terminals and PCB tracking.
ZXTN4004Z
Document Number: DS35457 Rev: 2 - 2
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