SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
・2.5
Gate Drive.
・Low
Threshold Voltage : V
th
=0.5½1.5V.
・High
Speed.
・Small
Package.
・Enhancement-Mode.
KTK5132V
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
SYMBOL
V
DS
V
GSS
I
D
P
D
T
ch
T
stg
RATING
30
±20
100
100
150
-55½150
UNIT
V
V
mA
mW
℃
℃
EQUIVALENT CIRCUIT
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-on Time
Switching Time
Turn-off Time
t
off
SYMBOL
I
GSS
V
(BR)DSS
I
DSS
V
th
|Y
fs
|
R
DS(ON)
C
iss
C
rss
C
oss
t
on
V
DD
=5V, I
D
=10mA, V
GS
=0½5V
TEST CONDITION
V
GS
=±16V, V
DS
=0V
I
D
=100μ V
GS
=0V
A,
V
DS
=30V, V
GS
=0V
V
DS
=3V, I
D
=0.1mA
V
DS
=3V, I
D
=10mA
I
D
=10mA, V
GS
=2.5V
V
DS
=3V, V
GS
=0V, f=1MHz
V
DS
=3V, V
GS
=0V, f=1MHz
V
DS
=3V, V
GS
=0V, f=1MHz
MIN.
-
30
-
0.5
25
-
-
-
-
-
-
TYP.
-
-
-
-
-
4
8.5
3.3
9.3
50
180
MAX.
±1
-
1
1.5
-
7
-
-
-
-
-
UNIT
μ
A
V
μ
A
V
mS
Ω
pF
pF
pF
nS
nS
2014. 8. 07
Revision No : 1
1/3
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