A Product Line of
Diodes Incorporated
Green
ZDT6790
COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTOR IN SM-8 PACKAGE
Features
•
NPN Transistor
BV
CEO
> 45
V
CE(sat)
< 100mV @ I
C
= 100mA
Continuous Current I
C
= 2A
PNP Transistor
BV
CEO
> -40V
V
CE(sat)
< 250mV @ I
C
= -500mA
Continuous Current I
C
= -2A
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
Case: SM-8 (8 LEAD SOT223)
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.117 grams (approximate)
•
•
•
•
SM-8
Top View
Top View
Pin Out
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZDT6790TA
ZDT6790TC
Notes:
Marking
T6790
T6790
Reel size (inches)
7
13
Tape width (mm)
12
12
Quantity per reel
1,000
4,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
T6790
T6790 = Product Type Marking Code
ZDT6790
Document number: DS33210 Rev. 2 - 2
1 of 9
www.diodes.com
July 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZDT6790
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current (Note 5)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
NPN
45
45
6
2
6
PNP
-50
-40
-6
-2
-6
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
Notes:
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
2.25
2.75
55.60
45.50
30.68
-55 to +150
Unit
W
°C/W
°C/W
°C
5. For the device with any single die active, mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions .
6. For the device with both die active, mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
ZDT6790
Document number: DS33210 Rev. 2 - 2
2 of 9
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July 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZDT6790
Thermal Characteristics
10
Limited
-I
C
Collector Current (A)
R
CE(SAT)
10
R
CE(SAT)
Limited
I
C
Collector Current (A)
1
DC
1s
100ms
10ms
1ms
100us
1
DC
1s
100ms
10ms
1ms
100us
100m
One active die
Single Pulse
10m
T
amb
=25°C
100m
One active die
Single Pulse
10m
T
amb
=25°C
0.1
1
10
0.1
1
10
V
CE
Collector-Emitter Voltage (V)
-V
CE
Collector-Emitter Voltage (V)
NPN Safe Operating Area
3.0
50
40
30
D=0.5
Single Pulse
PNP Safe Operating Area
Max Power Dissipation (W)
Two active die
Thermal Resistance (°C/W)
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
One active die
20
D=0.2
D=0.05
D=0.1
10
0
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
Single Pulse
T
amb
=25°C
Derating Curve
Maximum Power (W)
100
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
ZDT6790
Document number: DS33210 Rev. 2 - 2
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July 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZDT6790
NPN - Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Transfer Static Ratio (Note 8)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Min
45
45
6
—
—
500
400
150
—
—
—
—
150
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
200
16
33
1300
Max
—
—
—
100
100
—
—
—
100
500
900
900
—
—
—
—
Unit
V
V
V
nA
nA
—
Test Condition
I
C
= 100µA
I
C
= 10mA
I
E
= 100µA
V
CB
= 35V
V
EB
= 5V
I
C
= 100mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
I
C
= 100mA, I
B
= 0.5mA
I
C
= 1A, I
B
= 5mA
I
C
= 1A, I
B
= 10mA
I
C
= 1A, V
CE
= 2V
I
C
= 50mA, V
CE
= 5V,
f = 50MHz
V
EB
= 0.5V, f = 1MHz
V
CB
= 10V, f = 1MHz
V
CC
= 10V, I
C
= 500mA,
I
B1
= 50mA, I
B2
= 50mA
Collector-Emitter Saturation Voltage (Note 8)
Base-Emitter Saturation Voltage (Note 8)
Base-Emitter Turn-on Voltage (Note 8)
Transitional Frequency (Note 8)
Input Capacitance
Output Capacitance
Switching Time
Note:
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
ibo
C
obo
t
on
t
off
mV
mV
mV
MHz
pF
pF
ns
ns
8. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤
2%.
ZDT6790
Document number: DS33210 Rev. 2 - 2
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July 2012
© Diodes Incorporated
A Product Line of
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ZDT6790
NPN – Typical Electrical Characteristics
1.0
Tamb=25°C
I
C
/I
B
=100
0.8
-55°C
V
CE(SAT)
(V)
V
CE(SAT)
(V)
100m
I
C
/I
B
=200
I
C
/I
B
=100
I
C
/I
B
=10
0.6
0.4
0.2
0.0
1m
25°C
100°C
10m
1m
1m
I
C
Collector Current (A)
10m
100m
1
10
I
C
Collector Current (A)
10m
100m
1
V
CE(SAT)
v I
C
1000
V
CE
=2V
900
800
700
600
500
400
300
200
100
0
1
10
1.0
I
C
/I
B
=100
V
CE(SAT)
v I
C
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
-55°C
25°C
Typical Gain (h
FE
)
Normalised Gain
100°C
V
BE(SAT)
(V)
0.8
-55°C
25°C
0.6
100°C
0.4
1m
I
C
Collector Current (A)
I
C
Collector Current (A)
10m
100m
1
10
h
FE
v I
C
1.0
V
CE
=2V
V
BE(SAT)
v I
C
V
BE(ON)
(V)
0.8
-55°C
25°C
0.6
100°C
0.4
1m
I
C
Collector Current (A)
10m
100m
1
10
V
BE(ON)
v I
C
ZDT6790
Document number: DS33210 Rev. 2 - 2
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July 2012
© Diodes Incorporated
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