Green
DMS3016SFG
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
POWERDI
®
Product Summary
V
(BR)DSS
R
DS(on) max
13mΩ @ V
GS
= 10V
30V
16mΩ @ V
GS
= 4.5V
9.3A
I
D
T
A
= 25°C
10.2A
Features and Benefits
•
DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
•
Low R
DS(ON)
– minimize conduction losses
•
Low V
SD
– reducing the losses due to body diode conduction
•
Low Q
rr
– lower Q
rr
of the integrated Schottky reduces body diode
switching losses
•
Low gate capacitance (Q
g
/Q
gs
) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
•
Avalanche rugged – I
AR
and E
AR
rated
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
•
•
•
Applications
•
•
•
DC-DC Converters
Power management functions
Analog Switch
Mechanical Data
•
•
•
•
•
•
•
Case: POWERDI3333-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish
⎯
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
Drain
POWERDI3333-8
S
S
Pin 1
S
G
8
7
6
5
Gate
D
D
D
D
1
2
3
4
Top View
Pin Configuration
Source
Top View
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMS3016SFG-7
DMS3016SFG-13
Notes:
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
POWERDI is a registered trademark of Diodes Incorporated.
DMS3016SFG
Document number: DS35434 Rev. 7 - 2
1 of 7
www.diodes.com
October 2012
© Diodes Incorporated
DMS3016SFG
Marking Information
YYWW
S30
S30 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 09 = 2009)
WW = Week code (01 ~ 53)
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= 10V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Continuous Drain Current (Note 6) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Pulsed Drain Current (10us pulse, duty cycle=1%)
Avalanche Current (Note 7)
Repetitive Avalanche Energy (Note 7) L = 0.3mH
Steady
State
Steady
State
Steady
State
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
AR
E
AR
Value
30
±12
7.0
5.5
6.4
5.1
10.2
8.1
9.3
7.4
80
13
24
Units
V
V
A
A
A
A
A
A
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Notes:
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
P
D
R
θ
JA
R
θ
JC
T
J,
T
STG
Value
0.98
2.08
127
60
3.42
-55 to +150
Units
W
°C/W
°C/W
°C
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7 .I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C
1,000
R
DS(ON)
Limited
100
I
D
(A) @P
W
=100µs
100
I
D
, DRAIN CURRENT (A)
I
D
(A) @P
W
=10ms
P
(PK)
, PEAK TRANSIENT POIWER (W)
I
D
(A) @P
W
=1ms
90
80
70
60
50
40
30
20
10
Single Pulse
R
θ
JA
= 54
°
C/W
R
θ
JA(t)
= r
(t)
* R
θ
JA
T
J
- T
A
= P * R
θ
JA(t)
10
I
D
(A) @ DC
1
I
D
(A) @P
W
=10s
I
D
(A) @P
W
=1s
0.1
T
J(MAX)
= 150
°
C
T
A
= 25
°
C
Single Pulse
I
D
(A) @P
W
=100ms
I
D
(A) @
P
W
=10µs
0.01
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
100
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
POWERDI is a registered trademark of Diodes Incorporated.
DMS3016SFG
Document number: DS35434 Rev. 7 - 2
2 of 7
www.diodes.com
October 2012
© Diodes Incorporated
DMS3016SFG
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
D = 0.02
0.01
D = 0.01
D = 0.005
R
θJA
(t)=r(t) * R
θ
JA
R
θ
JA
= 54°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
10
100
1,000
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
V
SD
I
S
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
30
⎯
⎯
1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
10
12
25
0.37
⎯
1886
372
128
2.0
19.5
44.6
4.8
4.6
5.8
23.7
35.4
7.7
Max
⎯
100
±100
2.2
13
16
⎯
0.6
5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
µA
Test Condition
V
GS
= 0V, I
D
= 1mA
V
DS
= 30V, V
GS
= 0V
V
GS
=
±12V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 11.2A
V
GS
= 4.5V, I
D
= 10.A
V
DS
= 5V, I
D
= 11.2A
V
GS
= 0V, I
S
= 1A
nA
V
mΩ
S
V
A
pF
Ω
nC
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= 15V, V
GS
= 10V
I
D
= 11.2A
ns
V
GS
= 10V, V
DD
= 15V, R
G
= 3Ω,
R
L
= 1.2Ω
8 .Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMS3016SFG
Document number: DS35434 Rev. 7 - 2
3 of 7
www.diodes.com
October 2012
© Diodes Incorporated
DMS3016SFG
30
V
GS
= 10V
30
V
GS
= 150°C
25
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
25
V
DS
= 5V
20
V
GS
= 3.0V
20
15
V
GS
= 2.5V
15
V
GS
= 125°C
10
V
GS
= 2.2V
V
GS
= 1.8V
V
GS
= 2.0V
10
V
GS
= 85°C
V
GS
= 25°C
5
5
0
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristics
2
0
0
V
GS
= -55°C
0.5
1
1.5
2
2.5
3
3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 5 Typical Transfer Characteristic
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.02
0.018
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0.002
0
V
GS
= 10V
V
GS
= 4.5V
0.024
0.022
0.02
0.018
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0.002
0
0
5
10
15
20
25
I
D
, DRAIN CURRENT (A)
Fig. 7 Typical On-Resistance
vs. Drain Current and Temperature
30
T
A
= -55°C
T
A
= 25°C
V
GS
= 4.5V
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 6 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.5
V
GS
= 4.5V
I
D
= 5A
R
DSON
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.7
0.02
0.018
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0.002
0
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 9 On-Resistance Variation with Temperature
V
GS
= 10V
I
D
= 10A
V
GS
= 4.5V
I
D
= 5A
1.3
V
GS
= 10V
I
D
= 10A
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 8 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated.
DMS3016SFG
Document number: DS35434 Rev. 7 - 2
4 of 7
www.diodes.com
October 2012
© Diodes Incorporated
DMS3016SFG
2
30
25
I
S
, SOURCE CURRENT (A)
T
A
= 25°C
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.5
I
D
= 100mA
20
15
1
10
5
-25
0
25
50
75
100
125
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
10,000
f = 1MHz
0.5
-50
0
0.2
0.3 0.4 0.5
0.6 0.7
0.8
0.9 1.0
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
T
A
= 150°C
10,000
I
DSS
, LEAKAGE CURRENT (µA)
T
A
= 125°C
C, CAPACITANCE (pF)
C
ISS
1,000
T
A
= 85°C
1,000
C
OSS
100
100
C
RSS
10
T
A
= 25°C
10
0
2
4
6
8
10
12
14
16
1
10
20
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Drain-Source Leakage Current vs. Voltage
0
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Total Capacitance
10
V
GS
, GATE-SOURCE VOLTAGE (V)
8
6
V
DS
= 15V
I
D
= 11.2A
4
2
0
0
5
10 15 20 25 30 35 40 45
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
50
POWERDI is a registered trademark of Diodes Incorporated.
DMS3016SFG
Document number: DS35434 Rev. 7 - 2
5 of 7
www.diodes.com
October 2012
© Diodes Incorporated
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