CMPT6517_15 datasheet, PDF - EEWORLD Datasheet

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CMPT6517_15: DescriptionSURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS; File Size320KB，2 Pages; ManufacturerCentral Semiconductor

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CMPT6517_15 Overview

SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS

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CMPT6517 NPN

CMPT6520 PNP

w w w. c e n t r a l s e m i . c o m

SURFACE MOUNT

COMPLEMENTARY HIGH VOLTAGE

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT6517 and

CMPT6520 are complementary silicon transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for high

voltage driver and amplifier applications.

MARKING CODES: CMPT6517: C1Z

CMPT6520: C2Z

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

350

5.0

500

250

350

-65 to +150

357

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=250V

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

VBE(ON)

hFE

VEB=5.0V (CMPT6517)

VEB=4.0V (CMPT6520)

IC=100µA

IC=1.0mA

IE=10µA (CMPT6517)

IE=10µA (CMPT6520)

IC=10mA,

IC=20mA,

IC=30mA,

IC=50mA,

IC=10mA,

IC=20mA,

IB=1.0mA

IB=2.0mA

IB=3.0mA

IB=5.0mA

IB=1.0mA

IB=2.0mA

MAX

UNITS

350

6.0

5.0

0.30

0.35

0.50

1.0

0.75

0.85

0.90

2.0

IC=30mA, IB=3.0mA

IC=10V, IC=100mA

VCE=10V, IC=1.0mA

VCE=10V, IC=10mA

R5 (1-February 2010)

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