DMN3053L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
30V
R
DS(ON)
45mΩ @ V
GS
= 10V
50mΩ @ V
GS
= 4.5V
I
D
T
A
= +25°C
4.0 A
3.5A
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
e3
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Applications
Load Switch
DC-DC Converters
Power management functions
SOT23
D
ESD PROTECTED
Equivalent Circuit
G
S
Top View
Top View
Ordering Information
(Note 4)
Part Number
DMN3053L-7
DMN3053L-13
Notes:
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
3N6 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
̅
Y or Y = Year (ex: A = 2013)
̅
M = Month (ex: 9 = September)
Chengdu A/T Site
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
2008
V
Feb
2
Shanghai A/T Site
2009
W
Mar
3
2010
X
Apr
4
2011
Y
May
5
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
April 2014
© Diodes Incorporated
DMN3053L
Document number: DS36883 Rev. 2 - 2
1 of 6
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DMN3053L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
Value
30
±12
4.0
3.5
35
1.5
Units
V
V
A
A
A
NEW PRODUCT
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 6)
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
Symbol
P
D
R
θJA
R
θJA
P
D
R
θJA
R
θJA
T
J,
T
STG
Value
0.76
0.48
165
114
1.2
0.8
100
69
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.6
36
38
42
44
0.7
676
54
42
15.5
7.3
17.2
1.2
0.9
2.0
5.5
152
32
1.4
45
50
53
55
1.2
V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 4.0A
V
GS
= 4.5V, I
D
=3.5A
V
GS
= 3.0V, I
D
=3.0A
V
GS
= 2.5V, I
D
=2.8A
V
GS
= 0V, I
S
= 1.25A
Symbol
BV
DSS
I
DSS
I
GSS
Min
30
Typ
Max
1
±10
Unit
V
µA
µA
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
Static Drain-Source On-Resistance
R
DS (ON)
mΩ
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
V
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
V
DS
= V
GS
= 0V,f = 1.0MHz
V
DS
= 15V, I
D
= 4A
V
DD
= 15V, V
GS
= 10V,
R
L
= 15Ω, R
G
= 6Ω
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN3053L
Document number: DS36883 Rev. 2 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN3053L
20
18
16
I
D
, DRAIN CURRENT (A)
14
12
10
8
6
4
2
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
V
GS
= 1.5V
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 2.5V
20
18
V
DS
= 5.0V
V
GS
= 3.0V
V
GS
= 3.5V
V
GS
= 2.0V
16
I
D
, DRAIN CURRENT (A)
14
12
10
8
6
4
2
0
0
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
NEW PRODUCT
0.5
1
1.5
2
2.5
3
3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
V
GS
= 4.5V
T
A
= 150°C
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.06
0.08
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.075
0.07
0.065
0.06
0.055
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0
0.055
V
GS
= 2.5V
0.05
0.045
V
GS
= 4.5V
T
A
= 125°C
T
A
= 85°C
0.04
0.035
0.03
0.025
0.02
0
2
V
GS
= 10V
T
A
= 25°C
T
A
= -55°C
4
6
8 10 12 14 16 18
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
2
6
8 10 12 14 16 18
I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
4
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.8
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
V
GS
= 10 V
I
D
= 4A
V
GS
= 2.5V
I
D
= 2.8A
V
GS
= 4.5V
I
D
= 3.5A
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
V
GS
= 4.5V
I
D
= 3.5A
1.4
V
GS
= 10 V
I
D
= 4A
1.2
1
0.8
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 5 On-Resistance Variation with Temperature
DMN3053L
Document number: DS36883 Rev. 2 - 2
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April 2014
© Diodes Incorporated
DMN3053L
1.5
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
20
18
I
S
, SOURCE CURRENT (A)
1.2
16
14
12
10
8
6
4
2
T
A
= 150°C
0.9
I
D
= 1mA
I
D
= 250µA
NEW PRODUCT
0.6
T
A
= 125°C
T
A
= 25°C
T
A
= 85°C
T
A
= -55°C
0.3
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
-50
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10000
V
GS
GATE THRESHOLD VOLTAGE (V)
f = 1MHz
10
C
T
, JUNCTION CAPACITANCE (pF)
8
1000
C
iss
6
V
DS
= 15V
I
D
= 4 A
4
100
C
oss
C
rss
2
10
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
30
0
0
2
4
6
8
10 12 14 16
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
18
100
Rds(on)
Limited
I
D
, DRAIN CURRENT (A)
10
1
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
T
J(MAX)
= 150C
T
A
= 25C
V
GS
= 4.5V
Single Pulse
DUT on 1 * MRP Board
P
W
= 1ms
P
W
= 100µs
0.1
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
100
DMN3053L
Document number: DS36883 Rev. 2 - 2
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April 2014
© Diodes Incorporated
DMN3053L
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
r(t), TRANSIENT THERMAL RESISTANCE
0.1
NEW PRODUCT
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
R
JA
(t) = r(t) * R
JA
R
JA
= 62°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
10
100
1000
0.001
0.00001
0.0001
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
H
J
K
A ll 7 °
K 1
a
A
M
L
L 1
C
B
D
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
DMN3053L
Document number: DS36883 Rev. 2 - 2
5 of 6
www.diodes.com
April 2014
© Diodes Incorporated
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