DMN3067LW
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
67mΩ @ V
GS
= 4.5V
30V
70mΩ @ V
GS
= 4.0V
98mΩ @ V
GS
= 2.5V
I
D
T
A
= +25°C
2.6A
2.5A
2.2A
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCED NEW PRODUCT
INFORMATION
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: SOT323
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
D
Applications
Switching
Power Management Functions
SOT323
G
S
ESD PROTECTED
Top View
Top View
Pin Configuration
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN3067LW-7
DMN3067LW-13
Notes:
Case
SOT323
SOT323
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N30 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
̅
Y or Y = Year (ex: A = 2013)
̅
M = Month (ex: 9 = September)
Chengdu A/T Site
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
Shanghai A/T Site
2012
Z
Mar
3
Apr
4
2013
A
May
5
Jun
6
2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
March 2014
© Diodes Incorporated
DMN3067LW
Document number: DS36640 Rev. 4 - 2
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DMN3067LW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
30
±12
2.6
2.1
10
Units
V
V
A
A
ADVANCED NEW PRODUCT
INFORMATION
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Thermal Characteristics
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Symbol
P
D
R
θJA
T
J,
T
STG
Value
0.5
1.1
241
130
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
30
0.5
Typ
48
50
70
447
54
41
23
4.6
1.0
1.0
3.8
5.2
15
6.1
Max
1
±10
1.5
67
70
98
1.2
Unit
V
µA
μA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 2.5A
V
GS
= 4.0V, I
D
= 2.5A
V
GS
= 2.5V, I
D
= 2.5A
V
GS
= 0V, I
S
= 0.6A
pF
Ω
nC
V
DS
= 10V, V
GS
= 0V, f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 2.5A
nS
V
DD
= 15V, I
D
= 1.25A, V
GEN
= 4.5V
,
R
GEN
= 10Ω
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN3067LW
Document number: DS36640 Rev. 4 - 2
2 of 6
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March 2014
© Diodes Incorporated
DMN3067LW
10.0
9.0
8.0
I
D
, DRAIN CURRENT (A)
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
V
GS
= 1.5V
V
GS
= 10V
10
9
8
I
D
, DRAIN CURRENT (A)
7
6
5
4
3
2
1
0
3
T
A
= 25°C
T
A
= -55°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.5V
V
GS
= 3.0V
V
GS
= 2.5V
V
GS
= 2.0V
V
DS
= 5.0V
ADVANCED NEW PRODUCT
INFORMATION
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.06
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1
0.055
V
GS
= 4.5V
0.8
I
D
= 2.5A
0.05
V
GS
= 10V
0.6
0.045
0.04
0.4
0.035
0.2
0.03
0
1
2
3
4
5
6
7
8
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
9
10
0
0
2
4
6
8
10
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
12
0.1
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
V
GS
= 4.5V
T
A
= 150°C
2
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
1.6
1.2
V
GS
= 4.0V
I
D
= 2.0A
0.8
V
GS
= 2.5V
I
D
= 1.0A
1
2
3
4
5
6
7
8
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
9
10
0.4
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMN3067LW
Document number: DS36640 Rev. 4 - 2
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© Diodes Incorporated
DMN3067LW
0.14
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.12
0.1
0.08
0.06
0.04
0.02
0
-50
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1.6
1.4
V
GS
= 2.5 V
I
D
= 1.0A
1.2
I
D
= 1mA
ADVANCED NEW PRODUCT
INFORMATION
1
I
D
= 250µA
V
GS
= 4.0V
I
D
= 2.0A
0.8
0.6
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
0.4
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
f = 1MHz
10
9
8
I
S
, SOURCE CURRENT (A)
7
T
A
= 125°C
T
A
= 150°C
1000
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
6
5
4
3
2
1
0
0
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
100
C
oss
C
rss
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
R
DS(on)
Limited
30
10
V
GS
GATE THRESHOLD VOLTAGE (V)
100
8
10
I
D
, DRAIN CURRENT (A)
6
V
DS
= 15V
I
D
= 2.5A
1
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
4
0.1
2
0.01
0
0
2
4
6
8
10
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
12
0.001
0.1
T
J(max)
= 150°C
P
W
= 100µs
T
A
= +25°C
V
GS
= 4.5V
Single Pulse
DUT on 1 * MRP Board
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMN3067LW
Document number: DS36640 Rev. 4 - 2
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March 2014
© Diodes Incorporated
DMN3067LW
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
ADVANCED NEW PRODUCT
INFORMATION
B C
G
H
K
M
J
D
L
SOT323
Dim
Min
Max
Typ
A
0.25
0.40
0.30
B
1.15
1.35
1.30
C
2.00
2.20
2.10
D
-
-
0.65
G
1.20
1.40
1.30
H
1.80
2.20
2.15
J
0.0
0.10
0.05
K
0.90
1.00
0.95
L
0.25
0.40
0.30
M
0.10
0.18
0.11
0°
8°
-
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.8
X
0.7
Y
0.9
C
1.9
E
1.0
X
E
DMN3067LW
Document number: DS36640 Rev. 4 - 2
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March 2014
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