DMN3190LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON) (MAX)
190mΩ @ V
GS
= 10V
335mΩ @ V
GS
= 4.5V
Package
SOT363
Features and Benefits
I
D (MAX)
T
A
= +25°C
1A
0.75A
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
ADVANCE INFORMATION
30V
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.006 grams (approximate)
Applications
Motor Control
Power Management Functions
Load Switch
D
1
G
2
S
2
Q
1
Q
2
ESD PROTECTED
Top View
S
1
G
1
D
2
Top View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMN3190LDW-7
DMN3190LDW-13
Notes:
Case
SOT363
SOT363
Packaging
3000K/Tape & Reel
10000K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N31 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
Apr
4
2013
A
May
5
Jun
6
2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
DMN3190LDW
Document number: DS36192 Rev. 4 - 2
1 of 5
www.diodes.com
September 2013
© Diodes Incorporated
DMN3190LDW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DSS
V
GSS
Steady
State
T < 5s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle=1%)
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
I
D
I
D
I
S
I
DM
Value
30
±20
1000
900
1300
1000
0.5
2.0
Units
V
V
mA
mA
A
A
NEW PRODUCT
ADVANCE INFORMATION
Continuous Drain Current (Note 6) V
GS
= 10V
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady State
T < 5s
T
A
= +25°C
T
A
= +70°C
Steady State
T < 5s
Symbol
P
D
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
0.32
0.19
395
320
0.4
0.25
320
250
143
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
30
—
—
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
122
181
0.7
—
87
17
12
69.8
0.9
2.0
0.3
0.3
4.5
8.9
30.3
15.6
Max
—
1
±10
2.8
190
335
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
μA
V
mΩ
mS
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 1mA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 1.3A
V
GS
= 4.5V, I
D
= 290mA
V
DS
= 10V, I
D
= 250mA
V
GS
= 0V, I
S
= 250mA
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
f = 1MHz , V
GS
= 0V, V
DS
= 0V
V
DS
= 10V, I
D
= 250mA
@T
C
= +25°C
V
DD
= 30V, V
GS
= 10V,
R
G
= 10Ω, I
D
= 100mA
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN3190LDW
Document number: DS36192 Rev. 4 - 2
2 of 5
www.diodes.com
September 2013
© Diodes Incorporated
DMN3190LDW
2.0
1.8
1.6
I
D
, DRAIN CURRENT (A)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
V
GS
= 3.0V
V
GS
= 4.0V
V
GS
= 10V
2
V
DS
= 5.0V
V
GS
= 4.5V
V
GS
= 3.5V
1.6
I
D
, DRAIN CURRENT (A)
NEW PRODUCT
ADVANCE INFORMATION
1.2
T
A
= 150°C
0.8
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.4
V
GS
= 2.5V
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
5
0
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.3
0.275
0.25
0.225
0.2
0.175
0.15
0.125
0.1
0.075
0.05
0.025
0
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2
V
GS
= 10V
V
GS
= 4.5V
0.4
V
GS
= 4.5V
0.35
0.3
0.25
0.2
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0.15
0.1
0.05
0
0
T
A
= -55°C
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
2
2
V
GS
= 10V
I
D
= 0.5A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
2.5
0.3
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
V
GS
= 4.5V
I
D
= 5A
0.2
1.5
1
V
GS
= 4.5V
I
D
= 250mA
0.1
V
GS
= 10V
I
D
= 10A
0.5
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMN3190LDW
Document number: DS36192 Rev. 4 - 2
3 of 5
www.diodes.com
September 2013
© Diodes Incorporated
DMN3190LDW
3
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
2.8
2.6
2.4
2.2
I
D
= 1mA
2
1.8
1.6
I
S
, SOURCE CURRENT (A)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
T
A
= 25°C
NEW PRODUCT
ADVANCE INFORMATION
2
1.8
1.6
1.4
1.2
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
1000
f = 1MHz
I
D
= 250µA
1
-50
10
V
GS
GATE THRESHOLD VOLTAGE (V)
V
DS
= 10V
I
D
= 250mA
C
T
, JUNCTION CAPACITANCE (pF)
8
100
C
iss
6
C
oss
4
10
C
rss
2
1
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
30
0
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
2
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B C
H
K
M
J
D
F
L
SOT363
Dim Min Max Typ
A
0.10 0.30 0.25
B
1.15 1.35 1.30
C
2.00 2.20 2.10
D
0.65 Typ
F
0.40 0.45 0.425
H
1.80 2.20 2.15
J
0
0.10 0.05
K
0.90 1.00 1.00
L
0.25 0.40 0.30
M
0.10 0.22 0.11
0°
8°
-
All Dimensions in mm
DMN3190LDW
Document number: DS36192 Rev. 4 - 2
4 of 5
www.diodes.com
September 2013
© Diodes Incorporated
DMN3190LDW
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
C2
NEW PRODUCT
ADVANCE INFORMATION
Z
G
C1
Y
X
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
DMN3190LDW
Document number: DS36192 Rev. 4 - 2
5 of 5
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September 2013
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