A Product Line of
Diodes Incorporated
DMN4034SSS
40V N-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCE INFORMATION
Product Summary
V
(BR)DSS
R
DS(on)
34mΩ @ V
GS
= 10V
40V
59mΩ @ V
GS
= 4.5V
5.5A
I
D
T
A
= 25°C
7.2A
Features and Benefits
•
•
•
•
•
•
100% Unclamped Inductive Switch (UIS) test in production
Low on-resistance
Fast switching speed
Max Q
g
rated
“Green” component and RoHS compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
•
•
•
•
Motor control
Backlighting
DC-DC Converters
Power management functions
Mechanical Data
•
•
•
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
SO-8
D
G
S
Top View
Top View
Equivalent Circuit
Ordering Information
(Note 1)
Product
DMN4034SSS-13
Note:
Marking
N4034SS
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
N4034SS
YY
WW
= Manufacturer’s Marking
N4034SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
DMN4034SSS
Document Number DS32106 Rev 2 - 2
1 of 9
www.diodes.com
January 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN4034SSS
ADVANCE INFORMATION
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source voltage
Gate-Source voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Continuous Drain current
V
GS
= 10V
(Note 2)
(Note 7)
(Note 7)
(Note 4)
T
A
= 70°C (Note 4)
(Note 3)
(Note 5)
(Note 4)
(Note 5)
Symbol
V
DSS
V
GS
E
AS
I
AS
I
D
I
DM
I
S
I
SM
Value
40
±20
27
15.25
7.2
5.8
5.4
33.0
4.1
33.0
Unit
V
V
mJ
A
A
A
A
A
Pulsed Drain current
V
GS
= 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
Symbol
(Note 3)
P
D
(Note 4)
(Note 3)
(Note 4)
(Note 6)
R
θ
JA
R
θ
JL
T
J
, T
STG
Value
1.56
12.5
2.8
22.5
80
44.5
37
-55 to 150
Unit
W
mW/°C
°C/W
°C
2. AEC-Q101 V
GS
maximum is
±16V.
3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note (3), except the device is measured at t
≤
10 sec.
5. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
7. UIS in production with L = 100µH, V
DD
= 40V.
DMN4034SSS
Document Number DS32106 Rev 2 - 2
2 of 9
www.diodes.com
January 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN4034SSS
Thermal Characteristics
ADVANCE INFORMATION
1.6
Max Power Dissipation (W)
R
DS(on)
Limited
I
D
Drain Current (A)
10
1
DC
1s
100ms
10ms
Single Pulse
T
amb
=25°C
1ms
100µs
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
25mm x 25mm
1oz FR4
100m
10m
1m
100m
V
DS
Drain-Source Voltage (V)
1
10
100 120 140 160
Temperature (°C)
Safe Operating Area
80
70
60
50
40
30
20
10
0
100µ
1m
10m 100m
D=0.2
D=0.1
Single Pulse
D=0.05
D=0.5
Derating Curve
Thermal Resistance (°C/W)
Maximum Power (W)
T
amb
=25°C
100
Single Pulse
T
amb
=25°C
10
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
DMN4034SSS
Document Number DS32106 Rev 2 - 2
3 of 9
www.diodes.com
January 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN4034SSS
ADVANCE INFORMATION
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
fs
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
40
⎯
⎯
1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
0.023
0.039
20.5
0.87
11.9
4.9
453
79.1
40.5
4.9
10
1.8
2.4
2.7
2.7
14
6
Max
⎯
1
±100
3.0
0.034
0.059
⎯
1.1
⎯
⎯
⎯
⎯
⎯
8
18
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
μA
nA
V
Ω
S
V
ns
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
I
D
= 250μA, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
I
D
= 250μA, V
DS
= V
GS
V
GS
= 10V, I
D
= 6A
V
GS
= 4.5V, I
D
= 5A
V
DS
= 15V, I
D
= 6A
I
S
= 6A, V
GS
= 0V
I
S
= 2.5A, di/dt = 100A/μs
V
DS
= 20V, V
GS
= 0V
f = 1MHz
V
GS
= 4.5V
V
GS
= 10V
V
DS
= 20V
I
D
= 6A
V
DD
= 20V, V
GS
= 10V
I
D
= 1A, R
G
≅
6.0Ω
8. Measured under pulsed conditions. Pulse width
≤
300μs; duty cycle
≤
2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
DMN4034SSS
Document Number DS32106 Rev 2 - 2
4 of 9
www.diodes.com
January 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN4034SSS
ADVANCE INFORMATION
Typical Characteristics
T = 25°C
10V
4.5V
T = 150°C
10V
4V
3.5V
3V
I
D
Drain Current (A)
3.5V
1
I
D
Drain Current (A)
10
4V
10
1
2.5V
0.1
3V
V
GS
0.1
2V
V
GS
0.01
0.1
0.01
V
DS
Drain-Source Voltage (V)
1
10
0.1
V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
1.6
Output Characteristics
Normalised R
DS(on)
and V
GS(th)
10
V
DS
= 10V
V
GS
= 10V
I
D
Drain Current (A)
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
I
D
= 12A
R
DS(on)
1
T = 150°C
T = 25°C
0.1
0.01
V
GS
= V
DS
I
D
= 250uA
V
GS(th)
1E-3
1
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance (
Ω
)
10
T = 25°C
3.5V
V
GS
Gate-Source Voltage (V)
2
3
4
5
Tj Junction Temperature (°C)
50
100
150
Normalised Curves v Temperature
10
V
GS
I
SD
Reverse Drain Current (A)
3V
1
4V
1
T = 150°C
T = 25°C
0.1
4.5V
10V
0.1
Vgs = 0V
0.01
0.01
0.1
On-Resistance v Drain Current
I
D
Drain Current (A)
1
10
0.01
0.2
0.4
0.6
0.8
1.0
V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
DMN4034SSS
Document Number DS32106 Rev 2 - 2
5 of 9
www.diodes.com
January 2012
© Diodes Incorporated
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