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HFP5N65U

Description
Superior Avalanche Rugged Technology
File Size206KB,8 Pages
ManufacturerSEMIHOW
Websitehttp://www.semihow.com/
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HFP5N65U Overview

Superior Avalanche Rugged Technology

HFP5N65U
March 2013
BV
DSS
= 650 V
HFP5N65U
650V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 10.5 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
100% Avalanche Tested
GS
=10V
R
DS(on) typ
I
D
= 4.5 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
T
C
=25
unless otherwise specified
Parameter
Value
650
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
– Continuous (T
C
= 25
– Continuous (T
C
= 100
– Pulsed
)
)
4.5
2.8
18
30
(Note 1)
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25 )
- Derate above 25
Operating and Storage Temperature Range
(Note 2)
(Note 1)
(Note 1)
(Note 3)
163
4.5
12.3
4.5
123
0.98
-55 to +150
300
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
R
R
R
JC
CS
JA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.02
--
62.5
Units
/W
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