2N4427
w w w. c e n t r a l s e m i . c o m
SILICON
NPN RF TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4427 is a
silicon NPN epitaxial planar RF transistor mounted
in a hermetically sealed package designed for high
frequency amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
VEBO
IC
IB
PD
PD
TJ, Tstg
40
20
2.0
400
400
1.0
3.5
-65 to +200
UNITS
V
V
V
mA
mA
W
W
°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
ICEV
ICEO
IEBO
BVCER
BVCEO
VCE(SAT)
hFE
hFE
fT
Cob
VCE=40V, VBE=1.5V
VCE=12V, VBE=1.5V, TC=150°C
VCE=12V
VEB=2.0V
IC=5.0mA, RBE=10Ω
IC=5.0mA
IC=100mA, IB=20mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=360mA
VCE=15V, IC=50mA, f=200MHz
VCB=12V, IE=0, f=1.0MHz
VCC=12V, Pin=100mW, f=175MHz
VCC=12V, Pout=1.0W, f=175MHz
VCC=12V, Pout=1.0W, f=175MHz
40
20
MAX
100
5.0
20
100
UNITS
μA
mA
μA
μA
V
V
0.5
10
5.0
500
4.0
10
50
100
200
V
MHz
pF
dB
%
mW
η
Gpe
Pin
R1 (4-June 2013)
2N4427
SILICON
NPN RF TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R1 (4-June 2013)
w w w. c e n t r a l s e m i . c o m
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