DMN1033UCB4
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
V
SSS
12V
R
SS(ON)
26mΩ @ V
GS
= 4.5V
I
S
T
A
= +25°C
5.5 A
Features and Benefits
Built-in G-S protection diode against ESD 2kV HBM.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
SS(ON)
) and yet maintain superior switching
Mechanical Data
Case: U-WLB1818-4
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Weight: 0.005 grams (approximate)
NEW PRODUCT
performance, making it ideal for high efficiency power
management applications.
Applications
Battery Management
Load Switch
Battery Protection
G1
G2
ESD PROTECTED TO 2kV
S1
S2
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN1033UCB4-7
Notes:
Case
U-WLB1818-4
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
GW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
Feb
2
2010
X
Mar
3
Apr
4
2011
Y
May
5
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
DMN1033UCB4
Document number: DS36264 Rev. 2 - 2
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September 2013
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DMN1033UCB4
Maximum Ratings
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Source Current @
V
GS
= 4.5V T
A
= +25°C (Note 5)
Steady
State
T
A
= +25°C
T
A
= +70°C
Symbol
V
SSS
V
GSS
I
S
I
SM
Value
12
6
5.5
4.5
20
Units
V
V
A
A
Pulsed Source Current @ T
A
= +25°C (Notes 5 & 6)
NEW PRODUCT
Thermal Characteristics
Characteristic
Power Dissipation, @T
A
= +25°C (Note 5)
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
JA
T
J
, T
STG
Value
1.45
88.21
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Source to Source Breakdown Voltage T
J
= +25°C
Zero Gate Voltage Source Current T
J
= +25°C
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.35
0.5
19.5
20
20.5
21
21.5
22
26
35
Symbol
V
(BR)SS
I
SSS
I
GSS
Min
12
—
—
Typ
—
—
—
Max
—
1.0
10
0.7
26
27
28
29
30
31
33
50
Unit
V
µA
µA
V
Test Condition
I
S
= 1mA, V
GS
=
V
V
SS
= 12V, V
GS
= 0V
V
GS
=
6V,
V
DS
= 0V
V
SS
= 10V, I
S
= 1.0mA
V
GS
= 4.5V, I
S
= 3.0A
V
GS
= 4.0V, I
S
= 3.0A
V
GS
= 3.7V, I
S
= 3.0A
V
GS
= 3.5V, I
S
= 3.0A
V
GS
= 3.1V, I
S
= 3.0A
V
GS
= 2.5V, I
S
= 3.0A
V
GS
= 1.8V, I
S
= 3.0A
V
GS
= 1.5V, I
S
= 3.0A
V
SS
= 10V, I
S
= 3.0A
I
F
= 3.0 A, V
GS
= 0 V,
V
GS
= 4.5V, V
SS
= 10V, I
S
= 6A
V
DD
= 6V,
R
L
= 6.0Ω, I
S
= 3.0A
Static Source -Source On-Resistance
R
SS(ON)
—
mΩ
Forward Transfer Admittance
Body Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Total Gate Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
2
|Y
fs
|
V
F(S-S)
Q
g
t
D(on)
t
r
t
D(off)
t
f
2
—
—
—
—
—
—
—
11
0.7
37
10
20
83
52
—
1.0
—
—
—
—
—
S
V
nC
ns
ns
ns
ns
5. Device mounted on FR4 material with 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) Cu.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN1033UCB4
Document number: DS36264 Rev. 2 - 2
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DMN1033UCB4
12.0
V
GS
= 6.0V
V
GS
= 1.2V
20
V
DS
= 5.0V
10.0
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 1.5V
V
GS
= 2.0V
16
I
D
, DRAIN CURRENT (A)
8.0
12
T
A
= 150°C
6.0
8
T
A
= 85°C
T
A
= 125°C
NEW PRODUCT
4.0
V
GS
= 1.0V
2.0
V
GS
= 0.9V
4
T
A
= 25°C
T
A
= -55°C
0.0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3
0
0
0.3
0.6
0.9
1.2
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
1.5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.06
0.035
V
GS
= 4.5V
0.05
0.03
T
A
= 125°C
T
A
= 150°C
0.04
V
GS
= 1.5V
0.025
T
A
= 85°C
0.03
V
GS
= 1.8V
V
GS
= 4.5V
V
GS
= 6.0V
0.02
T
A
= 25°C
0.02
T
A
= -55°C
0.01
0.015
0
0
2
4
6
8
10
12
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage
1.6
V
GS
= 1.8V
I
D
= 4.0A
4
6
8
10
12
I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs. Drain Current and Temperature
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
V
GS
= 1.8V
I
D
= 4.0A
0.01
0
2
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 5 On-Resistance Variation with Temperature
DMN1033UCB4
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DMN1033UCB4
0.8
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
10000
I
D
= 250µA
I
D
= 1mA
12
10
I
S
, SOURCE CURRENT (A)
8
T
A
= 25°C
6
4
NEW PRODUCT
2
0
-50
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10000
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
I
GSS
, LEAKAGE CURRENT (nA)
1000
T
A
= 125°C
100
T
A
= 150°C
1000
C
oss
10
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
f = 1MHz
C
rss
1
100
0
2
4
6
8
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
12
0.1
1
3
5
6
2
4
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 10 Gate-Source Leakage Current vs. Voltage
100
R
DS(on)
Limited
P
W
= 100µs
I
D
, DRAIN CURRENT (A)
10
1
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
T
J(max)
= 150°C
T
A
= 25°C
Single Pulse
DUT on 1 * MRP Board
V
GS
= 6V
P
W
= 100µs
0.1
0.01
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DMN1033UCB4
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DMN1033UCB4
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
NEW PRODUCT
D = 0.01
D = 0.005
D = Single Pulse
R
JA
(t) = r(t) * R
JA
R
JA
= 156°C/W
Duty Cycle, D = t1/ t2
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
100
1,000
0.001
0.0001
0.001
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
e
2
P I N
I D
A
B
1
E
B
A
e
6 x - Ø b
A 2
A
S E A T I N G
P L A N E
1
2
U-WLB1818-4
Dim
Min
Max
Typ
A
0.62
A2
0.36
b
0.25
0.35
0.30
D
1.75
1.80
1.79
E
1.75
1.80
1.79
e
0.65
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
D
4 x
1
A
C
2
Value
(in mm)
0.65
0.30
︵
︶
C
B
Dimensions
C
D
DMN1033UCB4
Document number: DS36264 Rev. 2 - 2
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September 2013
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