EEWORLDEEWORLDEEWORLD

Part Number

Search

DMN2013UFDE-7

Description
10500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size279KB,6 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

DMN2013UFDE-7 Online Shopping

Suppliers Part Number Price MOQ In stock  
DMN2013UFDE-7 - - View Buy Now

DMN2013UFDE-7 Overview

10500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

DMN2013UFDE-7 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage20 V
Processing package descriptionGREEN, PLASTIC, U-DFN2020-6, 6 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeSQUARE
Package SizeCHIP CARRIER
surface mountYes
Terminal formNO LEAD
terminal coatingNICKEL PALLADIUM GOLD
Terminal locationBOTTOM
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Maximum leakage current10.5 A
Maximum drain on-resistance0.0130 ohm
DMN2013UFDE
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON) MAX
11m @ V
GS
= 4.5V
20V
13mΩ @ V
GS
= 2.5V
30m @ V
GS
= 1.8V
50mΩ @ V
GS
= 1.5V
Package
U-DFN2020-6
U-DFN2020-6
U-DFN2020-6
U-DFN2020-6
I
D
T
A
= +25°C
10.5A
9.4A
6.5A
5.5A
Features
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4) 
2
Low Gate Threshold Voltage
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
Drain
per MIL-STD-202, Method 208
e4
Weight: 0.0065 grams (approximate)
UL
Applications
General Purpose Interfacing Switch
Power Management Functions
U-DFN2020-6
Gate
Gate
Protection
Diode
ESD PROTECTED
Bottom View
Pin Out
Source
Equivalent Circuit
Ordering Information
(Note 5)
Part Number
DMN2013UFDE-7
DMN2013UFDEQ-7
DMN2013UFDE-13
DMN2013UFDEQ-13
Notes:
Compliance
Standard
Automotive
Standard
Automotive
Case
U-DFN2020-6
U-DFN2020-6
U-DFN2020-6
U-DFN2020-6
Quantity per reel
3,000
3,000
10,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
N6 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
N6
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
Apr
4
2013
A
May
5
Jun
6
YM
2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
April 2013
© Diodes Incorporated
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
1 of 6
www.diodes.com

DMN2013UFDE-7 Related Products

DMN2013UFDE-7 DMN2013UFDE_15 DMN2013UFDE-13 DMN2013UFDEQ-13 DMN2013UFDEQ-7
Description 10500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 10500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 10500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 10500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 10500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals 3 3 3 3 3
Minimum breakdown voltage 20 V 20 V 20 V 20 V 20 V
Processing package description GREEN, PLASTIC, U-DFN2020-6, 6 PIN GREEN, PLASTIC, U-DFN2020-6, 6 PIN GREEN, PLASTIC, U-DFN2020-6, 6 PIN GREEN, PLASTIC, U-DFN2020-6, 6 PIN GREEN, PLASTIC, U-DFN2020-6, 6 PIN
Lead-free Yes Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes Yes
state ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape SQUARE SQUARE SQUARE SQUARE SQUARE
Package Size CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
surface mount Yes Yes Yes Yes Yes
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
terminal coating NICKEL PALLADIUM GOLD NICKEL PALLADIUM GOLD NICKEL PALLADIUM GOLD NICKEL PALLADIUM GOLD NICKEL PALLADIUM GOLD
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN
Number of components 1 1 1 1 1
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
Maximum leakage current 10.5 A 10.5 A 10.5 A 10.5 A 10.5 A
Maximum drain on-resistance 0.0130 ohm 0.0130 ohm 0.0130 ohm 0.0130 ohm 0.0130 ohm
Analysis of the value of .mobi domain name in the 3G era
Through the Internet, people can learn, shop, play games, etc. online, and surfing the Internet generally requires a computer as a foundation. With the advent of the 3G era and the popularity of vario...
a407705864 RF/Wirelessly
Photovoltaic Micro Solar Inverter Auxiliary Power Solution
Energy crisis and environmental pollution pose a serious threat to people's survival. As one of the remedial measures to improve the living environment of human beings, renewable energy power generati...
okhxyyo Analogue and Mixed Signal
Basics of Doppler filter banks
[size=4]Doppler filter bank[/size] [size=4] [/size] [size=4]How can radar detect echoes from multiple different targets at the same time and then distinguish and classify them according to the differe...
Jacktang RF/Wirelessly
Analysis on the technology and development trend of switching power supply in 2013
[p=30, null, left][color=#333333]The technical pursuit and development trend of switching power supply can be summarized into the following four aspects. [/color][/p][p=30, null, left][color=#333333]F...
tosharp.cn Power technology
Why do I get the value of SRAM?
.INCLUDE "m16def.inc" .DEF OPENBIT = R20 .DEF NUMBERBIT = R18 .ORG $0000 RJMP RESET .ORG $002A ;Jump over interrupt vector area RESET: LDI R16, LOW(RAMEND) ;Get the highest address of internal RAM OUT...
zac3824357 MCU
The role of the diode
StartFragmentWhat is the role of connecting diodes in parallel here?...
787668458 Analog electronics

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1802  470  1229  92  1242  37  10  25  2  26 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号