DMN2029USD
20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
25m @ V
GS
= 4.5V
35m @ V
GS
= 2.5V
Package
SO-8
Features
I
D
T
A
= +25°C
5.8A
4.8A
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCE INFORMATION
NEW PRODUCT
20V
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Applications
DC-DC Converters
Power Management Functions
Backlighting
SO-8
S1
G1
S2
G2
D1
D1
D2
D2
Top View
Pin Configuration
D1
D2
G1
S1
G2
S2
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
DMN2029USD-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
Top View
8
5
Logo
N2029SD
YY WW
1
DMN2029USD
Document number: DS36127 Rev. 3 - 2
Part no
.
Xth week: 01 ~ 53
Year: “12” = 2012
4
1 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMN2029USD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
ADVANCE INFORMATION
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= 4.5V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Steady
State
t < 10s
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AS
E
AS
Value
20
±8
5.8
4.7
6.9
5.7
2.1
30
15
11.2
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady state
t < 10s
T
A
= +25°C
T
A
= +70°C
Steady state
t < 10s
Symbol
P
D
R
θ
JA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
1.2
0.7
115
70
1.4
0.9
95
60
14.5
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
20
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
14
19
10
0.7
1171
133
110
1.2
10.4
18.6
1.9
2.3
16.5
33.3
119.3
53.5
7.5
2.0
Max
—
1
±100
1.5
25
35
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
S
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 6.5A
V
GS
= 2.5V, I
D
= 5.4A
V
DS
= 5V, I
D
= 6.5A
V
GS
= 0V, I
S
= 1.3A
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= 10V, I
D
= 3A
pF
Ω
nC
nS
nS
nC
V
GS
= 4.5V, V
DD
= 10V, R
GEN
= 6Ω,
I
D
= 1A
I
S
= 6.5A, dI/dt = 100A/μs
I
S
= 6.5A, dI/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN2029USD
Document number: DS36127 Rev. 3 - 2
2 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMN2029USD
30.0
V
GS
= 8.0V
V
GS
= 4.5V
20
18
16
I
D
, DRAIN CURRENT (A)
14
12
10
8
6
4
V
GS
= 1.5V
V
DS
= 5.0V
25.0
ADVANCE INFORMATION
NEW PRODUCT
V
GS
= 4.0V
V
GS
= 3.5V
I
D
, DRAIN CURRENT (A)
20.0
V
GS
= 3.0V
V
GS
= 2.5V
V
GS
= 2.0V
15.0
10.0
T
A
= 85°C
T
A
= 125°C
T
A
= 150°C
T
A
= -55°C
T
A
= 25°C
V
GS
= 1.8V
5.0
2
0
0
0.0
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
2.5
0.5
1
1.5
2
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.03
0.03
V
GS
= 4.5V
T
A
= 150°C
T
A
= 125°C
0.025
V
GS
= 2.5V
0.025
0.02
0.02
T
A
= 85°C
T
A
= 25°C
V
GS
= 4.5V
0.015
V
GS
= 10V
0.015
T
A
= -55°C
0.01
0.01
0.005
0.005
0
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
0
0
2
6
8 10 12 14 16 18
I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
4
20
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
V
GS
= 2.5 V
I
D
= 5A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.8
0.04
0.03
1.4
V
GS
= 4.5V
I
D
= 10A
V
GS
= 2.5V
I
D
= 5A
1.2
0.02
V
GS
= 4.5V
I
D
= 10A
1
0.01
0.8
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMN2029USD
Document number: DS36127 Rev. 3 - 2
3 of 6
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May 2013
© Diodes Incorporated
DMN2029USD
2
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1.8
I
S
, SOURCE CURRENT (A)
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
-50
10000
V
GS
GATE THRESHOLD VOLTAGE (V)
f = 1MHz
I
D
= 250µA
I
D
= 1mA
20
18
16
14
12
10
8
6
4
2
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
T
A
= 25°C
ADVANCE INFORMATION
NEW PRODUCT
0
8
7
6
5
4
3
2
1
0
V
DS
= 10V
I
D
= 3A
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
1000
C
oss
100
C
rss
10
0
2
6
8 10 12 14 16 18
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
4
20
0
2
4
6
8 10 12 14 16 18
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
20
r(t), TRANSIENT THERMAL RESISTANCE
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
R
JA
(t) = r(t) * R
JA
R
JA
= 113°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
10
100
1000
0.001
0.00001
0.0001
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
DMN2029USD
Document number: DS36127 Rev. 3 - 2
4 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMN2029USD
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
ADVANCE INFORMATION
NEW PRODUCT
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
h
A2 A A3
e
D
b
7
°~
9
°
45
°
Detail ‘A’
SO-8
Dim
Min
Max
A
-
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
-
0.35
L
0.62
0.82
0
8
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
0.254
C1
C2
Y
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
DMN2029USD
Document number: DS36127 Rev. 3 - 2
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May 2013
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