DMN2065UW
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
56mΩ @ V
GS
= 4.5V
I
D
max
T
A
= 25°C
2.8A
2.6A
2.2A
1.8A
Features and Benefits
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 standards for High Reliability
NEW PRODUCT
20V
65mΩ @ V
GS
= 2.5V
93mΩ @ V
GS
= 1.8V
140mΩ @ V
GS
= 1.5V
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
•
•
General Purpose Interfacing Switch
Power Management Functions
DC-DC Converters
Analog Switch
Mechanical Data
•
•
•
•
•
•
Case: SOT323
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
⎯
Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.027 grams (approximate)
Drain
SOT323
D
Gate
G
Source
S
Top View
Equivalent Circuit
Top View
Ordering Information
(Note 3)
Part Number
DMN2065UW-7
Notes:
Case
SOT323
Packaging
3000/Tape & Reel
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMH
DMH = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
Apr
4
2013
A
May
5
Jun
6
YM
2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
October 2011
© Diodes Incorporated
DMN2065UW
Document number: DS35554 Rev. 1 – 2
1 of 6
www.diodes.com
DMN2065UW
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Steady
State
t<10s
Pulsed Drain Current (10us pulse, duty cycle=1%)
Maximum Body Diode Forward Current (Note 4)
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
S
Value
20
±12
2.8
2.3
3.1
2.6
2.2
1.7
2.4
1.9
30
1.2
Units
V
V
A
A
A
A
A
A
NEW PRODUCT
Continuous Drain Current (Note 5) V
GS
= 4.5V
Continuous Drain Current (Note 5) V
GS
= 1.8V
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
P
D
R
θ
JA
P
D
R
θ
JA
T
J,
T
STG
Value
0.43
296
252
0.7
178
151
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
20
-
-
0.35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
52
59
60
75
7
0.7
400.0
73.8
65.6
5.4
0.7
1.4
3.5
9.7
23.8
7.2
Max
-
1
±1
1.0
56
65
93
140
-
1.0
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
μA
V
Test Condition
V
GS
= 0V, I
D
= 1mA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 2A
V
GS
= 2.5V, I
D
= 2A
V
GS
= 1.8V, I
D
= 1A
V
GS
= 1.5V, I
D
= 0.5A
V
DS
= 5V, I
D
= 3.8A
V
GS
= 0V, I
S
= 1A
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 6A
@T
c
= 25°C
Static Drain-Source On-Resistance
mΩ
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
S
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
DD
= 10V, V
GS
= 5V,
R
L
= 1.7Ω, R
G
= 6Ω,
4. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN2065UW
Document number: DS35554 Rev. 1 – 2
2 of 6
www.diodes.com
October 2011
© Diodes Incorporated
DMN2065UW
10
V
GS
= 8.0V
V
GS
= 4.5V
5
V
DS
= 5.0V
8
I
D
, DRAIN CURRENT (A)
V
GS
= 3.0V
V
GS
= 2.5V
V
GS
= 2.0V
4
I
D
, DRAIN CURRENT (A)
6
V
GS
= 1.5V
3
NEW PRODUCT
4
2
T
A
= 150
°
C
2
V
GS
= 1.2V
1
T
A
= 125
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= -55
°
C
0
0
0.5
1.0
1.5
2.0
2.5
V
DS
, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
3.0
0
0
0.5
1.0
1.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2.0
R
DS(ON)
,DRAIN-SOURCE ON-RESISTANCE(
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
Ω
)
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
1
2
3
4
I
D
, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
5
T
A
= 150
°
C
T
A
= 125
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= -55
°
C
V
GS
= 4.5V
1
2
3
4
5
6
7
I
D
, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
8
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.8
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 6 On-Resistance Variation with Temperature
V
GS
= 4.5V
I
D
= 10A
V
GS
= 2.5V
I
D
= 5A
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (Normalized)
1.6
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 5 On-Resistance Variation with Temperature
DMN2065UW
Document number: DS35554 Rev. 1 – 2
3 of 6
www.diodes.com
October 2011
© Diodes Incorporated
DMN2065UW
1.4
V
GS(TH)
, GATE THRESHOLD VOLTAGE(V)
1.2
5
4
1.0
0.8
NEW PRODUCT
I
S
, SOURCE CURRENT (A)
3
0.6
0.4
0.2
0
-50
2
1
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1,000
0
0
0.2
0.4
0.6
0.8
1.0
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
100
T
A
= 150°C
C
T
, JUNCTION CAPACITANCE (pF)
I
DSS
, LEAKAGE CURRENT (nA)
10
C
iss
T
A
= 125°C
1
T
A
= 85°C
100
C
oss
0.1
C
rss
0.01
T
A
= 25°C
f = 1MHz
10
0
4
8
12
16
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
20
0.001
T
A
= -55°C
4
6
8 10 12 14 16 18 20
V
DS
, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
0
2
10
9
V
GS
, GATE-SOURCE VOLTAGE (V)
8
7
6
5
4
3
2
1
0
0
3
6
9
12
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
15
I
D
, DRAIN CURRENT (A)
f = 1MHz
100
R
DS(on)
Limited
10
1
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
P
W
= 10µs
0.1
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
DMN2065UW
Document number: DS35554 Rev. 1 – 2
4 of 6
www.diodes.com
October 2011
© Diodes Incorporated
DMN2065UW
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
NEW PRODUCT
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θJA
= 300°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
A
B C
G
H
K
M
J
D
L
SOT323
Dim
Min
Max
Typ
A
0.25
0.40
0.30
B
1.15
1.35
1.30
C
2.00
2.20
2.10
D
-
-
0.65
G
1.20
1.40
1.30
H
1.80
2.20
2.15
J
0.0
0.10
0.05
K
0.90
1.00
1.00
L
0.25
0.40
0.30
M
0.10
0.18
0.11
0°
8°
-
α
All Dimensions in mm
Suggested Pad Layout
Y
Z
C
Dimensions Value (in mm)
Z
2.8
X
0.7
Y
0.9
C
1.9
E
1.0
X
E
DMN2065UW
Document number: DS35554 Rev. 1 – 2
5 of 6
www.diodes.com
October 2011
© Diodes Incorporated
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