DMN2250UFB
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
0.17Ω @ V
GS
= 4.5V
20V
0.23Ω @ V
GS
= 2.5V
0.25Ω @ V
GS
= 1.8V
I
D
T
A
= +25°C
1.35A
1.15A
1.10A
Features
•
•
•
•
•
•
•
•
Low On-Resistance
Very Low Gate Threshold Voltage V
GS(TH)
, 1.0V max
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCE INFORMATION
NEW PRODUCT
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
•
•
•
•
Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
e4
Weight: 0.001 grams (approximate)
Applications
•
•
DC-DC Converters
Power Management Functions
Drain
X1-DFN1006-3
Gate
Body
Diode
S
D
G
Gate
Protection
Diode
Source
ESD PROTECTED
Bottom View
Top View
Internal Schematic
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN2250UFB-7B
Notes:
Case
X1-DFN1006-3
Packaging
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Z5
Top View
Z5 = Product Type Marking Code
Bar Denotes Gate and Source Side
DMN2250UFB
Document number: DS36035 Rev. 3 - 2
1 of 6
www.diodes.com
February 2013
© Diodes Incorporated
DMN2250UFB
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DSS
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
I
DM
I
S
Value
20
±8
1.35
1.03
6
1
Units
V
V
A
A
A
ADVANCE INFORMATION
NEW PRODUCT
Continuous Drain Current (Note 5) V
GS
= 4.5V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode continuous Current
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady state
Symbol
P
D
R
θ
JA
T
J,
T
STG
Value
0.5
0.3
278
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
20
—
—
0.35
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
1.4
0.7
94
12
10
87.1
1.4
3.1
0.13
0.14
4.3
6.1
59.4
25.4
Max
—
100
±1
1.0
170
230
250
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
nA
µA
V
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±6V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 1A
V
GS
= 2.5V, I
D
= 1A
V
GS
= 1.8V, I
D
= 1A
V
DS
= 10V, I
D
= 1A
V
GS
= 0V, I
S
= 150mA
V
DS
=16V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= 10V, I
D
= 250mA
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47Ω, R
G
= 10Ω,
I
D
= 200mA
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN2250UFB
Document number: DS36035 Rev. 3 - 2
2 of 6
www.diodes.com
February 2013
© Diodes Incorporated
DMN2250UFB
3.0
2.5
I
D
, DRAIN CURRENT (A)
V
GS
= 1.8V
V
GS
= 2.0V
V
GS
= 2.5V
V
GS
= 3.0V
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 8.0V
V
GS
= 1.2V
V
GS
= 1.5V
2.0
V
DS
= 5.0V
2.0
ADVANCE INFORMATION
NEW PRODUCT
1.5
I
D
, DRAIN CURRENT (A)
1.5
1.0
1.0
T
A
= 150°C
0.5
T
A
= 125°C
0.5
V
GS
= 1.0V
T
A
= 85°C
T
A
= 25°C
0
0
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
1
5
0
T
A
= -55°C
0
0.5
1.0
1.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
2.0
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.25
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.30
0.5
0.4
0.20
V
GS
= 1.8V
V
GS
= 2.5V
V
GS
= 4.5V
V
GS
= 8.0V
0.15
0.3
I
D
= 1.0A
0.10
0.2
0.05
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.1
0
2
3
4
5
6
7
8
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
1
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.30
V
GS
= 4.5V
1.8
1.6
V
GS
= 2.5V
I
D
= 500mA
0.20
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.25
1.4
V
GS
= 4.5V
I
D
= 500mA
V
GS
= 1.8V
I
D
= 200mA
0.15
T
A
= 25°C
1.2
0.10
T
A
= -55°C
1.0
0.05
0
0.8
0.6
-50
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
DMN2250UFB
Document number: DS36035 Rev. 3 - 2
3 of 6
www.diodes.com
February 2013
© Diodes Incorporated
DMN2250UFB
1.0
V
GS
= 1.8V
I
D
= 200mA
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.30
0.25
V
GS
= 2.5V
I
D
= 500mA
V
GS
= 4.5V
I
D
= 500mA
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
0.8
0.20
ADVANCE INFORMATION
NEW PRODUCT
0.6
I
D
= 250µA
I
D
= 1mA
0.15
0.4
0.10
0.05
0
-50
0.2
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
0
-50
2.0
1.8
1.6
I
S
, SOURCE CURRENT (A)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
1,000
f = 1MHz
C
T
, JUNCTION CAPACITANCE (pF)
100
C
iss
C
oss
10
C
rss
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1
0
2
4
6
8 10 12 14 16 18
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
20
10
V
GS
GATE THRESHOLD VOLTAGE (V)
8
V
DS
= 10V
I
D
= 250mA
6
4
2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
3.5
DMN2250UFB
Document number: DS36035 Rev. 3 - 2
4 of 6
www.diodes.com
February 2013
© Diodes Incorporated
DMN2250UFB
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
ADVANCE INFORMATION
NEW PRODUCT
A
A1
D
b1
E
b2
e
X1-DFN1006-3
Dim Min
Max Typ
A
0.47
0.53 0.50
A1
0
0.05 0.03
b1
0.10
0.20 0.15
b2
0.45
0.55 0.50
D
0.95 1.075 1.00
E
0.55 0.675 0.60
e
0.35
⎯
⎯
L1
0.20
0.30 0.25
L2
0.20
0.30 0.25
L3
0.40
⎯
⎯
All Dimensions in mm
L2
L3
L1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
X
1
X
G2
Y
Z
G1
Dimensions
Z
G1
G2
X
X1
Y
C
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
DMN2250UFB
Document number: DS36035 Rev. 3 - 2
5 of 6
www.diodes.com
February 2013
© Diodes Incorporated
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