DMN2320UFB4
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
20V
R
DS(on)
320m @ V
GS
= 4.5V
500m @ V
GS
= 2.5V
1000m @ V
GS
= 1.8V
I
D
max
T
A
= +25°
C
1.0A
0.65A
0.4A
Features and Benefits
•
•
•
•
•
•
•
Footprint of just 0.6mm
2
– thirteen times smaller than SOT23
0.4mm profile – ideal for low profile applications
Low Gate Threshold Voltage
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ESD Protected Gate 2KV
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
•
Load switch
Mechanical Data
•
•
•
•
•
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e4
Weight: 0.001 grams (Approximate)
D
X2-DFN1006-3
G
S
D
G
ESD PROTECTED TO 2kV
Gate Protection
Diode
S
Bottom View
Top View
Internal Schematic
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN2320UFB4-7B
Notes:
Marking
ND
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMN2320UFB4-7B
ND
Top View
Bar Denotes Gate
and Source Side
ND = Product Type Marking Code
DMN2320UFB4
Document number: DS37892 Rev. 1 - 2
1 of 7
www.diodes.com
April 2015
© Diodes Incorporated
DMN2320UFB4
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= 4.5V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Steady
State
C
T
A
= +25°
T
A
= +100°
C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
20
±8
1.0
0.7
6
Unit
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
P
D
R
θJA
R
θJA
T
J
,
T
STG
Value
0.52
1.07
240
117
-55 to +150
Unit
W
W
°
C/W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
20
-
-
0.50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
0.7
71
12
9.4
69
0.89
0.14
0.16
4.9
6.9
21.7
10.6
Max
-
1
10
0.95
320
500
1,000
1.2
-
-
-
-
-
-
-
-
-
-
-
Unit
V
µA
µA
V
m
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 500mA
V
GS
= 2.5V, I
D
= 400mA
V
GS
= 1.8V, I
D
= 100mA
V
GS
= 0V, I
S
= 300mA
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 1A
V
DS
= 10V, I
D
= 1A
V
GS
= 4.5V, R
G
= 6
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 25mm X 25mm square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN2320UFB4
Document number: DS37892 Rev. 1 - 2
2 of 7
www.diodes.com
April 2015
© Diodes Incorporated
DMN2320UFB4
2.0
V
GS
= 4.5V
V
GS
= 2.5V
V
GS
= 2.0V
2.0
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
V
GS
= 1.5V
I
D
, DRAIN CURRENT (A)
1.5
V
GS
= 1.8V
1.5
1.0
1.0
0.5
V
GS
= 1.2V
0.5
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
5
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.4
0.8
V
GS
= 4.5V
0.3
0.6
0.2
V
GS
= 2.5V
V
GS
= 4.5V
0.4
T
A
= 125°
C
T
A
= 150°
C
0.1
0.2
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
0
0
0.4
0.8
1.2
1.6
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
2
0
0
0.25
0.5 0.75 1
1.25 1.5 1.75
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
2
1.4
V
GS
= 4.5V
I
D
= 1.0A
V
GS
= 2.5V
I
D
= 500mA
R
DSON
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.6
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.8
0.6
1.2
0.4
V
GS
= 2.5V
I
D
= 500mA
1.0
0.2
V
GS
= 4.5V
I
D
= 1.0A
0.8
0.6
-50
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°
C)
Fig. 5 On-Resistance Variation with Temperature
-25
0
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°
C)
Fig. 6 On-Resistance Variation with Temperature
DMN2320UFB4
Document number: DS37892 Rev. 1 - 2
3 of 7
www.diodes.com
April 2015
© Diodes Incorporated
DMN2320UFB4
1.2
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2.0
1.0
I
S
, SOURCE CURRENT (A)
1.6
0.8
I
D
= 1mA
1.2
T
A
= 25°
C
0.6
I
D
= 250µA
0.8
0.4
0.2
0.4
0
-50 -25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°
C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1000
V
GS
GATE THRESHOLD VOLTAGE (V)
0
0
0.2
0.4
0.6
0.8
1.0
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
8
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
6
V
DS
= 10V
I
D
= 1.0A
100
4
C
oss
10
C
rss
f = 1MHz
2
1
0
4
8
12
16
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
R
DS(on)
Limited
P
W
= 100µs
0
20
0
0.2
0.4 0.6 0.8
1
1.2 1.4 1.6
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 10 Gate Charge
1.8
10
I
D
, DRAIN CURRENT (A)
1
DC
P
W
= 10s
P
W
= 1s
0.1
T
A
= 25°C
T
J (m ax )
= 150°C
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
0.01
0.1
V
GS
= 4.5V
Single Pulse
DUT on 1 * MRP Board
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
100
DMN2320UFB4
Document number: DS37892 Rev. 1 - 2
4 of 7
www.diodes.com
April 2015
© Diodes Incorporated
DMN2320UFB4
1
r(t ), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θJA
= 227°
C/W
Duty Cycle, D = t1/ t2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 12 Transient Thermal Resistance
10
100
1000
Single Pulse
0.001
0.000001
0.00001
DMN2320UFB4
Document number: DS37892 Rev. 1 - 2
5 of 7
www.diodes.com
April 2015
© Diodes Incorporated
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