DMN2550UFA
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
0.45
Ω
@ V
GS
= 4.5V
0.55
Ω
@ V
GS
= 2.5V
0.75
Ω
@ V
GS
= 1.8V
1.0
Ω
@ V
GS
= 1.5V
I
D
max
T
A
= +25°C
0.6 A
Features and Benefits
Low Package Profile, 0.4mm Maximum Package Height
0.48mm Package Footprint, 16 Times Smaller than SOT23
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V Max
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
2
NEW PRODUCT
20V
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: X2-DFN0806-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e4
Weight: 0.001 grams (Approximate)
Drain
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Body
Diode
D
ESD PROTECTED
S
G
Gate
Bottom View
Top View
Package Pin Configuration
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN2550UFA-7B
Notes:
Case
X2-DFN0806-3
Packaging
10K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
R1
Top View
Bar Denotes Gate
and Source Side
R1 = Product Type Marking Code
DMN2550UFA
Document number: DS37120 Rev. 2 - 2
1 of 6
www.diodes.com
September 2014
© Diodes Incorporated
DMN2550UFA
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
20
±8
0.6
0.5
1.5
Units
V
V
A
A
NEW PRODUCT
Pulsed Drain Current (Note 6)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
P
D
R
JA
T
J,
T
STG
Value
360
353
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.4
—
Static Drain-Source On-Resistance
R
DS(ON)
—
—
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
Min
20
—
—
Typ
—
—
—
—
0.28
0.33
0.4
0.5
—
52.5
6.3
5.2
0.88
0.11
0.10
7.1
11
105
36
Max
—
100
±10
1.0
0.45
0.55
0.75
1.0
1.0
—
—
—
—
—
—
—
—
—
—
Unit
V
nA
µA
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 16V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 200mA
V
GS
= 2.5V, I
D
= 100mA
V
GS
= 1.8V, I
D
= 50mA
V
GS
= 1.5V, I
D
= 10mA
V
GS
= 0V, I
S
= 10mA
Ω
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
—
—
—
—
—
—
—
—
—
—
—
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
DS
= 16V, V
GS
= 0V,
f = 1.0MHz
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47Ω, R
G
= 10Ω
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN2550UFA
Document number: DS37120 Rev. 2 - 2
2 of 6
www.diodes.com
September 2014
© Diodes Incorporated
DMN2550UFA
1.0
V
GS
= 1.5V
1
V
GS
= 2.0V
V
GS
= 3.0V
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 8.0V
V
GS
= 1.2V
V
DS
= 5.0V
0.9
0.8
I
D
, DRAIN CURRENT (A)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
0.9
0.8
I
D
, DRAIN CURRENT (A)
0.7
0.6
0.5
0.4
0.3
0.2
V
GS
= 1.0V
V
GS
= 0.9V
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
NEW PRODUCT
0.1
3
0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.5
1
1.5
2
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
2.5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.2
V
GS
= 1.2V
0.4
V
GS
= 4.5V
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
1
0.3
0.8
V
GS
= 1.5V
T
A
= 25°C
0.6
V
GS
= 1.8V
0.2
T
A
= -55°C
0.4
V
GS
= 2.5V
0.1
0.2
V
GS
= 4.5V
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
1
2
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.5
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
V
GS
= 4.5V
I
D
= 500mA
0.4
V
GS
= 2.5V
I
D
= 200mA
0.3
V
GS
= 4.5V
I
D
= 500mA
1.2
V
GS
= 2.5V
I
D
= 200mA
0.2
0.8
0.1
0.4
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMN2550UFA
Document number: DS37120 Rev. 2 - 2
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September 2014
© Diodes Incorporated
DMN2550UFA
1.2
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1
0.9
1
I
S
, SOURCE CURRENT (A)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
0.8
I
D
= 1mA
NEW PRODUCT
0.6
I
D
= 250µA
0.4
T
A
= 25°C
T
A
= -55°C
0.2
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
100
0
-50
00
1.5
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
8
V
GS
GATE THRESHOLD VOLTAGE (V)
C
iss
C
T
, JUNCTION CAPACITANCE (pF)
6
V
DS
= 10V
I
D
= 250mA
10
C
oss
C
rss
4
2
f = 1MHz
1
0
2
6
8 10 12 14 16 18
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
4
20
0
0
0.2
0.4 0.6 0.8
1
1.2 1.4
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
1.6
10
R
DS(on)
Limited
I
D
, DRAIN CURRENT (A)
1
DC
P
W
= 10s
0.1
T
J(max)
= 150°C
T
A
= 25°C
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
0.01
0.1
V
GS
= 4.5V
Single Pulse
DUT on 1 * MRP Board
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
100
DMN2550UFA
Document number: DS37120 Rev. 2 - 2
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September 2014
© Diodes Incorporated
DMN2550UFA
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
NEW PRODUCT
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
Rthja(t) = r(t) * Rthja
Rthja= 356°C/W
Duty Cycle, D = t1/ t2
0.0001
0.001
0.1
1
0.01
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
10
100
1000
0.001
0.000001
0.00001
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A3
A
A1
Seating Plane
D
e
L (2x)
K
E1
b (2x)
E
X2-DFN0806-3
Dim Min
Max Typ
A
0.375 0.40 0.39
A1
0
0.05 0.02
A3
-
-
0.10
b
0.10 0.20 0.15
D
0.55 0.65 0.60
D1
0.35 0.45 0.40
E
0.75 0.85 0.80
E1
0.20 0.30 0.25
e
-
-
0.35
K
-
-
0.20
L
0.20 0.30 0.25
All Dimensions in mm
Pin#1
R0.075
D1
DMN2550UFA
Document number: DS37120 Rev. 2 - 2
5 of 6
www.diodes.com
September 2014
© Diodes Incorporated
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