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G35160

Description
35A HIGH VOLTAGE GLASS PASSIVATED CELL DIODE
File Size27KB,2 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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G35160 Overview

35A HIGH VOLTAGE GLASS PASSIVATED CELL DIODE

®
G35160
35A HIGH VOLTAGE GLASS PASSIVATED CELL DIODE
WON-TOP ELECTRONICS
Pb
Features
Glass Passivated Die Construction
Low Leakage
Low Forward Voltage
High Surge Current Capability
Die Size 160mil SQ
Anode
+
C
D
Mechanical Data
Case: Cell Diode Passivated with Silicon Rubber
Terminal: Copper Disc with Ag Plated
Polarity: Indicated by Large Disc On Cathode Side
Mounting Position: Any
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 2
B
Dim
A
B
C
D
C35M
Min
0.75
Max
6.40
5.46
2.50
A
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
C
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
@T
A
=25°C unless otherwise specified
Value
Unit
1600
V
1120
35
V
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 35A
I
FSM
400
A
V
FM
1.2
V
@T
A
= 25°C
I
RM
5.0
µA
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
R
θJA
T
J
, T
STG
1.4
-40 to +150
°C/W
°C
© Won-Top Electronics Co., Ltd.
Revision: April, 2012
www.wontop.com
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