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HFD6N65U

Description
Superior Avalanche Rugged Technology
File Size263KB,8 Pages
ManufacturerSEMIHOW
Websitehttp://www.semihow.com/
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HFD6N65U Overview

Superior Avalanche Rugged Technology

HFD6N65U_HFU6N65U
June 2015
BV
DSS
= 650 V
HFD6N65U / HFU6N65U
650V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 16.0 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
100% Avalanche Tested
GS
=10V
R
DS(on) typ
I
D
= 4.8 A
D-PAK
2
1
1
3
2
3
I-PAK
HFD6N65U
HFU6N65U
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
T
C
=25
unless otherwise specified
Parameter
Value
650
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
– Continuous (T
C
= 25
– Continuous (T
C
= 100
– Pulsed
)
)
4.8
3.0
19.2
30
(Note 1)
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25
)*
(Note 2)
(Note 1)
(Note 1)
(Note 3)
170
4.8
9.5
4.5
2.5
95
0.76
-55 to +150
300
Power Dissipation (T
C
= 25 )
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
R
R
R
JC
JA
JA
Parameter
Junction-to-Case
Junction-to-Ambient*
Junction-to-Ambient
Typ.
--
--
--
Max.
1.31
50
110
Units
/W
* When mounted on the minimum pad size recommended (PCB Mount)
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