DMJ7N70SK3
700V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
700V
R
DS(on) max
1.25Ω @ V
GS
= 10V
I
D
T
C
= +25°C
3.9A
Features
100% Unclamped Inductive Switch (UIS) test in production
Low Gate Input Resistance
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (approximate)
Applications
Switching
D
TO252
D
G
Top View
S
Internal Schematic
Top View
Ordering Information
(Note 4)
Part Number
DMJ7N70SK3-13
Notes:
Compliance
Standard
Case
TO252
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
J7N70S
YYWW
=Manufacturer’s Marking
J7N70S = Product Type Marking Code
.
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 13 = 2013)
WW = Week Code (01 to 53)
DMJ7N70SK3
Document number: DS36907 Rev. 3 - 2
1 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMJ7N70SK3
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= 10V
T
C
= +25°C
T
C
= +100°C
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
I
AR
E
AR
dv/dt
Value
700
±30
3.9
2.5
3.0
15.6
1.5
76
11.8
Units
V
V
A
A
A
A
mJ
V/ns
NEW PRODUCT
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 6)
Avalanche Energy (Note 6)
Peak Diode Recovery dv/dt
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
T
C
= +25°C
T
C
= +100°C
Symbol
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
28
11
38
2.1
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Time (T
J
= +150°C)
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Charge (T
J
= +150°C)
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
t
rr
Q
rr
Q
rr
Min
700
2
Typ
2.9
1
0.9
351
66
1.1
3.5
13.9
1.9
8.5
8.5
11.6
24.5
10
212
251
1.8
2.3
Max
1
100
4
1.25
1.3
Unit
V
µA
nA
V
Ω
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 700V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 2.5A
V
GS
= 0V, I
S
= 5A
pF
Ω
nC
V
DS
= 50V, f = 1MHz,
V
GS
= 0V
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DD
= 560V, I
D
= 5A,
V
GS
= 10V
ns
V
DD
= 350V, V
GS
= 10V,
R
G
= 4.7Ω, I
D
= 2.5A
ns
ns
µC
µC
I
S
= 5A, dI/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. UIS in production with V
DD
= 50V, V
GS
= 10V, L = 60mH, T
J
= +25°C.
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing
DMJ7N70SK3
Document number: DS36907 Rev. 3 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMJ7N70SK3
6.0
V
GS
= 25V
V
GS
= 15V
5
V
DS
= 20V
5.0
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
V
GS
= 8.0V
V
GS
= 5.5V
4
I
D
, DRAIN CURRENT (A)
4.0
V
GS
= 6.0V
V
GS
= 5.0V
3
T
A
= 150°C
NEW PRODUCT
3.0
V
GS
= 4.5V
2
T
A
= 125°C
T
A
= 25°C
T
A
= -55°C
2.0
1.0
1
V
GS
= 4.0V
V
GS
= 3.5V
T
A
= 85°C
0.0
0
1
3
4
5
6
7
8
9
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
2
10
0
0
1
3
4
5
6
7
8
9
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
2
10
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
1
2
3
4
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
5
V
GS
= 10V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
2
5
4
3
I
D
= 2.5A
2
1
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
5
V
GS
= 10V
5
4.5
T
A
= 150°C
4
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
4
3.5
3
2.5
2
1.5
1
0.5
V
GS
= 5.0V
I
D
= 1A
V
GS
= 10V
I
D
= 5A
3
T
A
= 125°C
T
A
= 85°C
2
T
A
= 25°C
1
T
A
= -55°C
0
0
2
3
4
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
1
5
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMJ7N70SK3
Document number: DS36907 Rev. 3 - 2
3 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMJ7N70SK3
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
5
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
4.5
4
3.5
3
2.5
2
1.5
1
0.5
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
0
-50
I
D
= 250µA
I
D
= 1mA
4
3
V
GS
= 10V
I
D
= 5A
NEW PRODUCT
2
V
GS
= 5.0V
I
D
= 1A
1
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
5
10000
I
S
, SOURCE CURRENT (A)
4
C
T
, JUNCTION CAPACITANCE (pF)
1000
C
iss
C
oss
3
T
A
= 150°C
100
2
T
A
= 125°C
T
A
= 25°C
T
A
= 85°C
1
T
A
= -55°C
10
C
rss
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1
f = 1MHz
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
10
V
GS
GATE THRESHOLD VOLTAGE (V)
10
R
DS(on)
Limited
8
V
DS
= 560V
I
D
= 5A
I
D
, DRAIN CURRENT (A)
1
DC
P
W
= 10s
6
0.1
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
T
J(max)
= 150°C
T
A
= 25°C
V
GS
= 20V
Single Pulse
DUT on 1 * MRP Board
P
W
= 100µs
4
0.01
2
0
0
3
6
9
12
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
15
0.001
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
1000
DMJ7N70SK3
Document number: DS36907 Rev. 3 - 2
4 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMJ7N70SK3
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
r(t), TRANSIENT THERMAL RESISTANCE
0.1
D = 0.1
NEW PRODUCT
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
R
JA
(t) = r(t) * R
JA
R
JA
= 67°C/W
Duty Cycle, D = t1/ t2
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
100
1000
0.001
0.0001
0.001
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E
b3
L3
A
c2
D
A2
H
E1
L4
A1
L
e
2X b2
3X b
a
TO252
Dim Min Max Typ
A
2.19 2.39 2.29
A1
0.00 0.13 0.08
A2
0.97 1.17 1.07
b
0.64 0.88 0.783
b2
0.76 1.14 0.95
b3
5.21 5.46 5.33
c2
0.45 0.58 0.531
D
6.00 6.20 6.10
D1
5.21
e
2.286
E
6.45 6.70 6.58
E1
4.32
H
9.40 10.41 9.91
L
1.40 1.78 1.59
L3
0.88 1.27 1.08
L4
0.64 1.02 0.83
a
0°
10°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2
Y2
C
Y1
Z
Dimensions
Z
X1
X2
Y1
Y2
C
E1
Value (in mm)
11.6
1.5
7.0
2.5
7.0
6.9
2.3
X1
E1
DMJ7N70SK3
Document number: DS36907 Rev. 3 - 2
5 of 6
www.diodes.com
May 2014
© Diodes Incorporated
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