DMN10H220L
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
220mΩ @ V
GS
= 10V
100V
I
D
T
A
= +25°C
1.6A
1.3A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
250mΩ @ V
GS
= 4.5V
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(on)
) yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish—Matte Tin Annealed Over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.0072 grams (Approximate)
Applications
Load Switch
D
SOT23
D
G
G
S
S
Equivalent Circuit
Top View
Pin Configuration
Ordering Information
(Note 4)
Part Number
DMN10H220L-7
DMN10H220L-13
Notes:
Compliance
Standard
Standard
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N1H = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2013
A
Jan
1
Feb
2
2014
B
Mar
3
Apr
4
2015
C
May
5
Jun
6
2016
D
Jul
7
2017
E
Aug
8
Sep
9
2018
F
Oct
O
Nov
N
2019
G
Dec
D
April 2018
© Diodes Incorporated
DMN10H220L
Document number: DS36720 Rev. 4 - 2
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DMN10H220L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
(Note 6)
Continuous Drain Current (Note 5) V
GS
= 10V
(Note 5)
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
Value
100
16
1.6
1.3
1.4
1.1
0.6
8
Units
V
V
A
A
A
A
NEW PRODUCT
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
(Note 6)
(Note 5)
Symbol
P
D
R
ϴJA
T
J,
T
STG
Value
1.3
0.8
94
177
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
100
—
—
1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
0.7
401
22
17
2.1
4.1
8.3
1.5
2
6.8
8.2
7.9
3.6
17
9.8
Max
—
1
±100
2.5
220
250
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 100V, V
GS
= 0V
V
GS
=
16V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 1.6A
V
GS
= 4.5V, I
D
= 1.3A
V
GS
= 0V, I
S
= 1.1A
V
DS
= 25V, V
GS
= 0V
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 50V, I
D
= 1.6A
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
pF
Ω
nC
ns
V
DS
= 50V, V
GS
= 4.5V,
R
G
= 6.8ΩI
D
= 1A
ns
nC
I
F
= 1.1A, di/dt =100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN10H220L
Document number: DS36720 Rev. 4 - 2
2 of 6
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April 2018
© Diodes Incorporated
DMN10H220L
10.0
9.0
8.0
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
V
GS
= 9.0V
V
GS
= 8.0V
V
GS
= 4.5V
V
GS
= 5.0V
V
GS
= 6.0V
10
V
DS
= 10V
9
I
D
, DRAIN CURRENT (A)
8
7
6
5
4
T
A
= 85°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
7.0
6.0
5.0
4.0
NEW PRODUCT
V
GS
= 4.0V
3.0
2.0
1.0
0.0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
3
V
GS
= 3.5V
3
2
1
0
1
2
3
4
5
6
7
8
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
T
A
= -55°C
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
V
GS
= 10V
V
GS
= 4.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.4
I
D
= 200mA
I
D
= 100mA
0
1
2
3
4
5
6
7
8
9
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
10
2
4
6
8
10 12 14 16 18
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.70
V
GS
= 4.5V
3
0.60
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
2.5
V
GS
= 10 V
I
D
= 10A
0.50
0.40
0.30
0.20
0.10
T
A
= -55°C
T
A
= 150°C
2
1.5
T
A
= 125°C
T
A
= 85°C
V
GS
= 4.5V
I
D
= 5A
1
T
A
= 25°C
0.5
0.00
0
1
3
4
5
6
7
8
9
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
2
10
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMN10H220L
Document number: DS36720 Rev. 4 - 2
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April 2018
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DMN10H220L
0.5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
2.5
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
0.4
2.2
0.3
V
GS
= 4.5V
I
D
= 5A
1.9
I
D
= 1mA
NEW PRODUCT
0.2
1.6
I
D
= 250µA
0.1
V
GS
= 10 V
I
D
= 10A
1.3
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
1
-50
10
9
8
I
S
, SOURCE CURRENT (A)
1000
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
7
6
5
4
3
2
1
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
100
C
oss
C
rss
f = 1MHz
0
10
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
10
10
V
DS
= 50V
I
D
= 1.6A
R
DS(on)
Limited
V
GS
GATE THRESHOLD VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
8
P
W
= 100µs
1
DC
P
W
= 10s
6
0.1
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
4
0.01
T
J(max)
= 150°C
T
C
= 25°C
V
GS
= 10V
Single Pulse
DUT on 1*MRP Board
2
0
0.001
0
2
4
6
8
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
10
0.1
1
10
100
1000
-V
DS
DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DMN10H220L
Document number: DS36720 Rev. 4 - 2
4 of 6
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April 2018
© Diodes Incorporated
DMN10H220L
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
NEW PRODUCT
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001
R
JA
(t) = r(t) * R
JA
R
JA
= 172°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
10
100
1000
0.0001
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
H
J
All 7°
GAUGE PLANE
0.25
K1
K
a
A
M
L
L1
C
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
0°
8°
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Y
Y1
C
Dimensions
C
X
X1
Y
Y1
Value (in mm)
2.0
0.8
1.35
0.9
2.9
X
X1
DMN10H220L
Document number: DS36720 Rev. 4 - 2
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April 2018
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