DMN25D0UFA
25V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
25V
R
DS(on)
4Ω @ V
GS
= 4.5V
5Ω @ V
GS
= 2.7V
I
D
T
A
= +25°C
0.32A
0.28A
Features
•
•
•
•
•
•
•
•
0.4mm ultra low profile package for thin application
0.48mm package footprint, 16 times smaller than SOT23
Low V
GS(th),
can be driven directly from a battery
Low R
DS(on)
ESD Protected Gate (>6kV Human Body Mode)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
2
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
•
•
•
Case: X2-DFN0806-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
e4
Weight: 0.00043 grams (approximate)
Applications
•
•
•
Load switch
Portable applications
Power Management Functions
Drain
X2-DFN0806-3
Body
Diode
Gate
ESD HBM >6kV
Bottom View
Top View
Package Pin Configuration
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN25D0UFA-7B
Notes:
Compliance
Standard
Case
X2-DFN0806-3
Packaging
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMN25D0UFA-7B
56
Top View
Bar Denotes Gate
and Source Side
56 = Product Type Marking Code
DMN25D0UFA
Document number: DS36253 Rev. 1 - 2
1 of 6
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February 2014
© Diodes Incorporated
DMN25D0UFA
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
(Note 6)
Continuous Drain Current, V
GS
= 4.5V
Pulsed Drain Current
T
A
= +70°C (Note 6)
(Note 5)
(Note 7)
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
Value
25
8
0.32
0.25
0.24
1.2
Unit
V
A
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 6)
(Note 5)
(Note 6)
(Note 5)
Symbol
P
D
R
θJA
T
J
,
T
STG
Value
0.63
0.28
201
338
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
25
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
1
0.76
27.9
6.1
2
26.4
0.36
0.06
0.04
2.9
1.8
6.6
2.3
Max
—
1
100
1.2
4
5
-
1.2
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
Ω
S
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 20V, V
GS
= 0V
V
GS
= 8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 0.4A
V
GS
= 2.7V, I
D
= 0.2A
V
DS
= 5V, I
D
= 0.4A
V
GS
= 0V, I
S
= 0.29A
V
DS
= 10V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 5V, V
GS
= 4.5V,
I
D
= 0.2A
V
DS
= 6V, V
GS
= 4.5V,
I
D
= 0.5A, R
G
= 50Ω
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN25D0UFA
Document number: DS36253 Rev. 1 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN25D0UFA
0.5
V
GS
= 8.0V
V
GS
= 4.5V
0.5
V
DS
= 5.0V
0.4
I
D
, DRAIN CURRENT (A)
V
GS
= 4.0V
0.4
I
D
, DRAIN CURRENT (A)
V
GS
= 3.5V
V
GS
= 3.0V
V
GS
= 2.5V
V
GS
= 2.0V
V
GS
= 1.5V
0.3
0.3
0.2
0.2
T
A
= 150°C
0.1
V
GS
= 1.2V
0.1
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1
2
1.8
1.6
1.4
1.2
1
0.8
0.6
I
D
= 200mA
I
D
= 400mA
0.9
V
GS
= 2.7V
0.8
0.7
V
GS
= 4.5V
0.6
0.5
0
0.1
0.2
0.3
0.4
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
= 4.5V
0.5
0
2
3
4
5
6
7
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
1
8
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
0.2
0.3
0.4
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0.1
0.5
T
A
= 85°C
T
A
= 125°C
T
A
= 150°C
2
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
V
GS
= 4.5V
I
D
= 500mA
1.2
V
GS
= 2.7V
I
D
= 100mA
T
A
= 25°C
T
A
= -55°C
0.8
0.4
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
DMN25D0UFA
Document number: DS36253 Rev. 1 - 2
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February 2014
© Diodes Incorporated
DMN25D0UFA
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with Temperature
V
GS
= 4.5V
I
D
= 500mA
V
GS
= 2.7 V
I
D
= 100mA
1.2
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1
I
D
= 1mA
I
D
= 250µA
0.8
0.6
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
100
f = 1MHz
0.4
-50
0.5
C
T
, JUNCTION CAPACITANCE (pF)
0.4
I
S
, SOURCE CURRENT (A)
T
A
= 150°C
C
iss
0.3
T
A
= 125°C
T
A
= 25°C
10
C
oss
0.2
T
A
= -55°C
T
A
= 85°C
0.1
C
rss
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1
0
5
10
15
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
25
8
V
GS
GATE THRESHOLD VOLTAGE (V)
7
6
5
4
3
2
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
0.7
V
DS
= 5V
I
D
= 200mA
10
R
DS(ON)
Limited
I
D
, DRAIN CURRENT (A)
1
DC
0.1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
T
J(max)
= 150°C
T
A
= 25°C
V
GS
= 4.5V
Single Pulse
DUT on 1 * MRP Board
P
W
= 100µs
0.01
0.001
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMN25D0UFA
Document number: DS36253 Rev. 1 - 2
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February 2014
© Diodes Incorporated
DMN25D0UFA
1
D = 0.9
D = 0.7
D = 0.5
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 334°C/W
Duty Cycle, D = t1/ t2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
10
100
1000
0.001
0.000001 0.00001
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A3
A
A1
Seating Plane
D
e
L (2x)
K
E1
b (2x)
E
Pin#1
R0.075
X2-DFN0806-3
Dim Min
Max Typ
A
0.375 0.40 0.39
A1
0
0.05 0.02
A3
-
-
0.10
b
0.10 0.20 0.15
D
0.55 0.65 0.60
D1
0.35 0.45 0.40
E
0.75 0.85 0.80
E1
0.20 0.30 0.25
e
-
-
0.35
K
-
-
0.20
L
0.20 0.30 0.25
All Dimensions in mm
D1
DMN25D0UFA
Document number: DS36253 Rev. 1 - 2
5 of 6
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February 2014
© Diodes Incorporated
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