EEWORLDEEWORLDEEWORLD

Part Number

Search

DMN53D0LT_15

Description
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size243KB,5 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Compare View All

DMN53D0LT_15 Overview

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN53D0LT
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V
(BR)DSS
50V
R
DS(ON)
1.6Ω @ V
GS
= 10V
2.5Ω @ V
GS
= 4.5V
I
D
T
A
= +25°C
350 mA
200 mA
Features and Benefits
N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/ Output Leakage
Ultra-Small Surface Mount Package
ESD Protected to 2KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
NEW PRODUCT
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
SOT523
Case: SOT523
Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
e3
Terminal Connections: See Diagram
Weight: 0.002 grams (approximate)
Drain
D
Gate
ESD PROTECTED
Top View
Gate
Protection
Diode
Source
G
S
Top View
Ordering Information
Part Number
DMN53D0LT-7
DMN53D0LT-13
Notes:
(Note 4)
Case
SOT-523
SOT-523
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
T53 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: B = 2014
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
Feb
2
2015
C
Mar
3
Apr
4
2016
D
May
5
Jun
6
2017
E
Jul
7
2018
F
Aug
8
Sep
9
2019
G
Oct
O
Nov
N
2020
H
Dec
D
June 2014
© Diodes Incorporated
DMN53D0LT
Document number: DS37073 Rev. 2 - 2
1 of 5
www.diodes.com

DMN53D0LT_15 Related Products

DMN53D0LT_15 DMN53D0LT-13 DMN53D0LT-7
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Comparison of major FPGA manufacturers
Xilinx is the most used one. Its advantages are: 1. The chip is configured with EPROM, which means low debugging cost and easy upgrade. 2. The circuit input part of the development system --- Foundati...
1ying Automotive Electronics
Driver development is divided into WINDOWS, LINUX, WINCE, etc. Why is there no need for driver development under UCOS?
Driver development is divided into WINDOWS, LINUX, WINCE, etc. Why is there no need for driver development under UCOS?...
Nicjwwhg Real-time operating system RTOS
Analysis of classic amplifier circuit! Application of virtual break and virtual short!
This is a summary I saw recently by a very outstanding analog electronics teacher. I hope it can help you with analog electronics amplification! ! ! I personally think it is very good!...
758046532 Analog electronics
Application of American CDE capacitor module in buffer circuit
Application of American CDE capacitor module in buffer circuit As we all know, in the application circuit of power electronic devices, a snubber circuit, that is, an absorption circuit, must be set wi...
zbz0529 Discrete Device
How do I configure remote spy++ to use it?
I can't connect to it. Has anyone used it successfully?...
hzhanhai Embedded System
【AT-START-F403A Review】Part 4: Comparison and test of internal FLASH parameters of F403A
[i=s]This post was last edited by Changjianze1 on 2020-10-21 15:52[/i]FLASH flash memory testThe flash memory of this AT chip, according to the manual, is up to 1024K of memory. Two flash memories are...
常见泽1 Domestic Chip Exchange

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1585  1552  149  2853  1250  32  3  58  26  10 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号