DISCRETE SEMICONDUCTORS
DATA SHEET
M3D175
BLT52
UHF power transistor
Product specification
Supersedes data of 1997 Oct 15
1998 Jan 28
Philips Semiconductors
Product specification
UHF power transistor
FEATURES
•
Emitter ballasting resistors for an optimum
temperature profile
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
Common emitter class-B operation in portable radio
transmitters in the 470 MHz communication band.
handbook, halfpage
BLT52
PINNING
PIN
1, 4, 5, 8
2, 3
6, 7
emitter
base
collector
DESCRIPTION
8
5
DESCRIPTION
NPN silicon planar epitaxial power transistor encapsulated
in a ceramic SOT409A SMD package.
1
Top view
4
MBK150
Fig.1 Simplified outline SOT409A.
QUICK REFERENCE DATA
RF performance at T
mb
≤
60
°C
in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
7.5
CW, class-B
470
6
3
P
L
(W)
7
G
p
(dB)
≥8
typ. 9.5
≥8
typ. 9.5
η
C
(%)
≥50
typ. 65
≥50
typ. 55
1998 Jan 28
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
T
mb
≤
60
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−65
−
MIN.
MAX.
20
10
3
2.5
13
+150
200
BLT52
UNIT
V
V
V
A
W
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
PARAMETER
thermal resistance from junction to mounting base
CONDITIONS
P
tot
= 13 W; T
mb
≤
60
°C
VALUE
8
UNIT
K/W
MGM485
handbook, halfpage
10
IC
(A)
1
10
−1
1
10
VCE (V)
10
2
T
mb
= 60
°C.
Fig.2 DC SOAR.
1998 Jan 28
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
CONDITIONS
open emitter; I
C
= 20 mA
open base; I
C
= 40 mA
open collector; I
E
= 4 mA
V
BE
= 0; V
CE
= 7.5 V
I
C
= 1.2 A; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 7.5 V; f = 1 MHz
I
C
= 0; V
CE
= 7.5 V; f = 1 MHz
MIN.
20
10
3
−
25
−
−
TYP.
−
−
−
−
−
24
17
BLT52
MAX.
−
−
−
1
−
−
−
UNIT
V
V
V
mA
pF
pF
MGM486
MGM487
handbook, halfpage
100
handbook, halfpage
50
hFE
80
Cc
(pF)
40
60
30
40
20
20
10
0
0
0.4
0.8
1.2
1.6
2.0
IC (mA)
0
0
4
8
12
16
20
VCB (V)
V
CE
= 5 V; T
j
= 25
°C.
Measured under pulse conditions: t
p
≤
300
µs; δ ≤
0.001.
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
°C.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.4
Collector capacitance as a function of
collector-base voltage; typical values.
1998 Jan 28
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION
RF performance at T
mb
≤
60
°C
in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
7.5
CW, class-B
470
6
3
P
L
(W)
7
G
p
(dB)
≥8
typ. 9.5
≥8
typ. 9.5
BLT52
η
C
(%)
≥50
typ. 65
≥50
typ. 55
Ruggedness in class-B operation
The BLT52 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: CW, class-B operation; f = 470 MHz; V
CE
= 9 V and P
L
= 7 W; T
mb
≤
60
°C.
handbook, halfpage
10
MBK250
MGD257
Gp
(dB)
8
Gp
100
η
C
(%)
80
handbook, halfpage
10
PL
(W)
8
6
η
C
60
6
4
40
4
2
20
2
0
0
2
4
6
PL (W)
8
0
0
0
1
2
PIN (W)
3
CW, class-B operation; f = 470 MHz; V
CE
= 6 V;
tuned at P
L
= 3 W; T
mb
≤
60
°C.
CW, class-B operation; f = 470 MHz; V
CE
= 6 V;
tuned at P
L
= 3 W; T
mb
≤
60
°C.
Fig.5
Power gain and collector efficiency as
functions of load power; typical values.
Fig.6
Load power as a function of input power;
typical values.
1998 Jan 28
5
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