DMC2990UDJ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
R
DS(ON)
max
0.99Ω @ V
GS
= 4.5V
Q1
20V
1.2Ω @ V
GS
= 2.5V
1.8Ω @ V
GS
= 1.8V
2.4Ω @ V
GS
= 1.5V
1.9Ω @ V
GS
= -4.5V
Q2
-20V
2.4Ω @ V
GS
= -2.5V
3.4Ω @ V
GS
= -1.8V
5Ω @ V
GS
= -1.5V
Features and Benefits
I
D
max
T
A
= +25°C
450mA
400mA
330mA
300mA
-310mA
-280mA
-240mA
-180mA
Low On-Resistance
Very low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package 1mm x 1mm
Low Package Profile, 0.45mm Maximum Package height
ESD Protected Gate
Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3 & 4)
Qualified to AEC-Q101 standards for High Reliability
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
ADVANCE INFORMATION
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SOT963
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.027 grams (approximate)
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
SOT963
D
1
G
2
S
2
ESD PROTECTED
Top View
S
1
G
1
D
2
Top View
Schematic and
Transistor Diagram
Ordering Information
(Note 5 & 6)
Part Number
DMC2990UDJ-7
DMC2990UDJ-7B
Notes:
Case
SOT963
SOT963
Packaging
10K/Tape & Reel
10K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
5. The options -7 and -7B stand for different taping orientations. Please refer to Diodes website at http://www.diodes.com for further details.
6. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
D1
D1 = Product Type Marking Code
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
1 of 9
www.diodes.com
March 2013
© Diodes Incorporated
DMC2990UDJ
Maximum Ratings Q1 N-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
ADVANCE INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) V
GS
= 4.5V
Steady
State
t<5s
Steady
State
t<5s
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (Note 8)
T
A
= +25°C
T
A
= +70C
T
A
= +25C
T
A
= +70C
T
A
= +25C
T
A
= +70C
T
A
= +25C
T
A
= +70C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
S
I
DM
Value
20
±8
450
350
520
410
330
260
390
310
440
800
Units
V
V
mA
mA
mA
mA
mA
mA
Continuous Drain Current (Note 7) V
GS
= 1.8V
Maximum Ratings Q2 P-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
t<5s
Steady
State
t<5s
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (Note 8)
T
A
= +25C
T
A
= +70C
T
A
= +25C
T
A
= +70C
T
A
= +25C
T
A
= +70C
T
A
= +25C
T
A
= +70C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
S
I
DM
Value
-20
±8
-310
-240
-360
-280
-240
-190
-280
-220
-440
-800
Units
V
V
mA
mA
mA
mA
mA
mA
Continuous Drain Current (Note 5) V
GS
= -1.8V
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
Steady State
t<5s
R
θJA
T
J,
T
STG
Value
350
360
270
-55 to +150
Units
mW
°C/W
°C/W
°C
7. Device mounted on FR-4 PCB, with minimum recommended pad layout.
8. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
2 of 9
www.diodes.com
March 2013
© Diodes Incorporated
DMC2990UDJ
Electrical Characteristics Q1 N-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Symbol
BV
DSS
@T
C
= +25°C
I
DSS
I
GSS
V
GS(th)
Min
20
-
-
-
0.4
-
-
-
-
-
180
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
0.60
0.75
0.90
1.2
2.0
850
0.6
27.6
4.0
2.8
113
0.5
0.07
0.07
4.0
3.3
19.0
6.4
Max
-
100
50
±100
1.0
0.99
1.2
1.8
2.4
-
-
1.0
-
-
-
-
-
-
-
-
-
-
-
Unit
V
nA
nA
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 16V, V
GS
= 0V
V
DS
= 5V, V
GS
= 0V
V
GS
= ±5V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 2.5V, I
D
= 50mA
V
GS
= 1.8V, I
D
= 20mA
V
GS
= 1.5V, I
D
= 10mA
V
GS
= 1.2V, I
D
= 1mA
V
DS
= 5V, I
D
= 125mA
V
GS
= 0V, I
S
= 10mA
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
V
DD
= 15V, V
GS
= 4.5V,
R
L
= 47Ω, R
G
= 2Ω,
I
D
= 200mA
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
ADVANCE INFORMATION
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
R
DS(ON)
Ω
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
mS
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Electrical Characteristics Q2 P-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
@T
C
= +25°C
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
Min
-20
-
-
-
-0.4
-
-
-
-
-
100
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
1.2
1.5
2.1
2.5
4.0
450
-0.6
28.7
4.2
2.9
399
0.4
0.08
0.06
5.8
5.7
31.1
16.4
Max
-
100
50
±100
-1.0
1.9
2.4
3.4
5
-
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
Unit
V
nA
nA
V
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -16V, V
GS
= 0V
V
DS
= -5V, V
GS
= 0V
V
GS
= ±5V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -4.5V, I
D
= -100mA
V
GS
= -2.5V, I
D
= -50mA
V
GS
= -1.8V, I
D
= -20mA
V
GS
= -1.5V, I
D
= -10mA
V
GS
= -1.2V, I
D
= -1mA
V
DS
= -5V, I
D
= -125mA
V
GS
= 0V, I
S
= -10mA
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
GS
= -4.5V, V
DS
=- 10V,
I
D
= -250mA
V
DD
= -15V, V
GS
= -4.5V,
R
G
= 2Ω, I
D
= -200mA
Static Drain-Source On-Resistance
R
DS(ON)
Ω
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
mS
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
3 of 9
www.diodes.com
March 2013
© Diodes Incorporated
DMC2990UDJ
Q1 N-CHANNEL
0.8
V
GS
= 4.5V
V
GS
=4.0V
V
GS
= 3.0V
V
GS
= 2.5V
V
GS
= 2.0V
0.8
T
A
= -55°C
T
A
= 25°C
T
A
= 85°C
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
ADVANCE INFORMATION
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT(A)
0.6
0.6
T
A
= 125°C
T
A
= 150°C
0.4
V
GS
= 1.5V
0.4
0.2
0.2
0
V
GS
= 1.2V
V
DS
= 5.0V
0
0.5
1
1.5
2
2.5
3
3.5
V
DS
, DRAIN-SOURCE VOLTAGE (A)
Fig. 1 Typical Output Characteristics
4
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.2
1.2
1.0
V
GS
= 4.5V
T
A
= 150°C
1.0
V
GS
= 1.8V
0.8
0.6
0.8
T
A
= 125°C
V
GS
= 2.5V
0.6
T
A
= 85°C
T
A
= 25°C
0.4
0.2
V
GS
= 4.5V
0.4
T
A
= -55°C
0.2
0
0.2
0.4
0.6
0.8
I
D
, DRAIN-SOURCE CURRENT
Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage
1.6
I
D
= 300mA
0
0.4
0.6
0.8
1.0
I
D
DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance vs. Drain Current and Temperature
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.2
1.0
0.8
0
0.2
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (Normalized)
1.4
I
D
= 150mA
1.2
I
D
= 150mA
0.6
I
D
= 300mA
1.0
0.4
0.8
0.2
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE(
C)
Fig. 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE(
C)
Fig. 6 On-Resistance Variation with Temperature
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
4 of 9
www.diodes.com
March 2013
© Diodes Incorporated
DMC2990UDJ
1.2
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.0
1.0
I
D
= 1mA
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
ADVANCE INFORMATION
0.8
I
D
= 250µA
I
S
, SOURCE CURRENT (A)
0.8
0.6
T
A
= 25°C
0.6
0.4
0.4
0.2
0
-50
0.2
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE(
C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE- DRAIN VOLTAGE (V)
Fig. 8 Diodes Forward Voltage vs. Current
50
f = 1MHz
1,000
CT, JUNCTION CAPACITANCE (pF)
40
I
DSS
, LEAKAGE CURRENT (nA)
T
A
= 150°C
100
T
A
= 125°C
30
C
iss
20
10
T
A
= 85°C
T
A
= 25°C
10
C
oss
0
C
rss
0
5
10
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
20
6
8
10
12 14 16 18
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
1
2
4
8
1
R
DS(on)
Limited
DC
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
6
P
W
= 10s
P
W
= 100µs
0.1
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 10µs
4
0.01
T
J(MAX)
= 150°C
T
A
= 25°C
Single Pulse
2
VDS = 10V
0
0
0.4
0.6
0.8
Q
G
- (nC)
Fig. 11 Gate Charge Characteristics
0.2
1
0.001
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE
Fig. 12 SOA, Safe Operation Area
100
DMC2990UDJ
Document number: DS35481 Rev. 9 - 2
5 of 9
www.diodes.com
March 2013
© Diodes Incorporated
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