DMC3028LSDX
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
30V
-30V
R
DS(ON)
max
27mΩ @ V
GS
= 10V
35mΩ @ V
GS
= 4.5V
25mΩ @ V
GS
= -10V
41mΩ @ V
GS
= -4.5V
Features and Benefits
I
D
max
T
A
= +25°C
7.2A
6.0A
-7.6A
-6.2A
•
•
•
•
•
•
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCE INFORMATION
ADVANCED INFORMATION
Q1
Q2
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
•
•
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.074 grams (approximate)
Applications
•
•
•
DC-DC Converters
Power Management Functions
Backlighting
S1
G1
S2
G2
Top View
Top View
Pin Configuration
D1
D1
D2
D2
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMC3028LSDX-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
8
5
Logo
3028SDX
YY WW
Part no .
Xth week: 01 ~ 53
Year: “11” = 2011
1
4
DMC3028LSDX
Document number: DS36210 Rev. 3 - 2
1 of 9
www.diodes.com
June 2013
© Diodes Incorporated
DMC3028LSDX
Maximum Ratings – Q1 and Q2
(@T
A
= +25°C, unless otherwise specified.)
ADVANCE INFORMATION
ADVANCED INFORMATION
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Continuous Drain Current (Note 5) V
GS
=10V
t<10s
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
Q1
30
±20
5.5
4.1
7.2
5.7
2.2
40
Q2
-30
±20
-5.8
-4.3
-7.6
-6.1
-2.2
-30
Units
V
V
A
A
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
Symbol
P
D
R
• JA
P
D
R
Θ
JA
R
Θ
JC
T
J,
T
STG
Value
1.2
0.75
108
65
1.5
0.95
85
50
14.5
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics – Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
30
1
Typ
19
22
0.7
641
66
51
2.2
6
13.2
1.7
2.2
3.3
4.4
22.3
5.3
Max
1
±100
3
27
35
1.2
Unit
V
µ
A
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 6A
V
GS
= 4.5V, I
D
= 5A
V
GS
= 0V, I
S
= 1.3A
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= 15V, I
D
= 10A
pF
Ω
nC
nS
V
GS
= 10V, V
DD
= 15V, R
G
= 6Ω,
I
D
= 1A
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMC3028LSDX
Document number: DS36210 Rev. 3 - 2
2 of 9
www.diodes.com
June 2013
© Diodes Incorporated
DMC3028LSDX
Electrical Characteristics – Q2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-30
-1
Typ
21
29
-0.7
1241
146
110
14.8
10.9
22
3.5
4.7
9.7
17.1
60.5
40.4
Max
-1
±100
-3
25
41
-1.2
Unit
V
µ
A
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -24V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -6A
V
GS
= -4.5V, I
D
= -5A
V
GS
= 0V, I
S
= -1.3A
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= -15V, I
D
= -7A
ADVANCE INFORMATION
ADVANCED INFORMATION
pF
Ω
nC
nS
V
GS
= -10V, V
DD
= -15V, R
GEN
= 6Ω,
I
D
= -7A
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMC3028LSDX
Document number: DS36210 Rev. 3 - 2
3 of 9
www.diodes.com
June 2013
© Diodes Incorporated
DMC3028LSDX
N-Channel – Q1
30.0
V
GS
= 10V
V
GS
= 3.5V
30
V
DS
= 5V
ADVANCE INFORMATION
ADVANCED INFORMATION
25.0
25
V
GS
= 5.0V
I
D
, DRAIN CURRENT (A)
20.0
V
GS
= 4.5V
I
D
, DRAIN CURRENT (A)
V
GS
= 4.0V
V
GS
= 3.0V
20
V
GS
= 150°C
15.0
15
10.0
10
V
GS
= 125°C
V
GS
= 25°C
V
GS
= 85°C
5.0
V
GS
= 2.5V
5
V
GS
= -55°C
0.0
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
2
0
0
0.5
1
1.5
2
2.5
3
3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.05
0.045
0.04
0.035
0.03
0.025
V
GS
= 4.5V
0.05
V
GS
= 4.5V
0.045
0.04
0.035
0.03
0.025
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
0.02
0.015
0.01
0.005
0.00
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
V
GS
= 10V
0.02
0.015
0.01
0.005
0
0
10
15
20
25
I
D
, DRAIN CURRENT(A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
5
30
T
A
= -55°C
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.8
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
-50
V
GS
= 10V
I
D
= 10A
V
GS
= 4.5V
I
D
= 5A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
1.6
V
GS
= 4.5V
I
D
= 5A
1.4
V
GS
= 10V
I
D
= 10A
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
DMC3028LSDX
Document number: DS36210 Rev. 3 - 2
4 of 9
www.diodes.com
June 2013
© Diodes Incorporated
DMC3028LSDX
3
30
V
GS(TH)
, GATE THRESHOLD VOLTAGE
2.5
I
S
, SOURCE CURRENT (A)
25
ADVANCE INFORMATION
ADVANCED INFORMATION
2
I
D
= 1mA
20
T
A
= 25°C
1.5
I
D
= 250µA
15
1
10
0.5
5
75 100 125 150
0
25
50
T
A
, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
-25
10000
0
-50
0
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10000
f = 1MHz
T
A
= 150°C
I
DSS
, DRAIN LEAKAGE CURRENT (nA)
1000
T
A
= 125°C
C
T
, JUNCTION CAPACITANCE (pF)
1000
100
C
iss
10
T
A
= 85°C
100
C
oss
T
A
= 25°C
1
C
rss
10
20
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
0.1
0
10
0
2
4
6
8 10 12 14 16 18
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
20
10
V
GS
, GATE-SOURCE VOLTAGE (V)
8
V
DS
=15
I
D
= 10A
6
4
2
0
0
4
6
8
10
12
14
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Source Voltage vs. Total Gate Charge
2
DMC3028LSDX
Document number: DS36210 Rev. 3 - 2
5 of 9
www.diodes.com
June 2013
© Diodes Incorporated
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