DMC3400SDW
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
R
DS(ON)
max
0.4Ω @ V
GS
= 10V
I
D
max
T
A
= +25°
C
0.65A
0.52A
-0.45A
-0.33A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
NEW PRODUCT
NEW PRODUCT
Q1
30
0.7Ω @ V
GS
= 4.5V
0.9Ω @ V
GS
= -10V
Q2
-30
1.7Ω @ V
GS
= -4.5V
Mechanical Data
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making
it ideal for high efficiency power management applications.
Motor Control
Power Management Functions
DC-DC Converters
Case: SOT363
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.027 grams (Approximate)
D1
SOT363
D2
D
1
G
2
S
2
G1
G2
ESD PROTECTED
Top View
Gate Protection
Diode
S1
Gate Protection
Diode
S2
S
1
G
1
Top View
Pin out
Q1 N-CHANNEAL
Q2 P-CHANNEAL
D
2
Ordering Information
(Note 4)
Part Number
DMC3400SDW-7
DMC3400SDW-13
Notes:
Case
SOT363
SOT363
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
CSI
CSI = Product Type Marking Code
YM = Date Code Marking
Y or Y= Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
Feb
2
2015
C
Mar
3
Apr
4
YM
2016
D
2017
E
Jun
6
Jul
7
2018
F
Aug
8
Sep
9
2019
G
Oct
O
Nov
N
2020
H
Dec
D
May
5
DMC3400SDW
Document number: DS37690 Rev. 1 - 2
1 of 9
www.diodes.com
February 2015
© Diodes Incorporated
DMC3400SDW
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Continuous Drain Current (Note 6) V
GS
= 10V
T
A
= +25C
T
A
= +70C
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
Value_Q1
30
±20
0.65
0.50
0.4
4
Value_Q2
-30
±20
-0.45
-0.36
-0.35
-3
Units
V
V
A
A
A
NEW PRODUCT
NEW PRODUCT
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
P
D
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
0.31
406
0.39
319
126
-55 to +150
Units
W
°
C/W
W
°
C/W
°
C/W
°
C
Electrical Characteristics – N Channel – Q1
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
30
-
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
0.2
0.3
0.8
55
8.5
6.5
92
0.6
1.4
0.2
0.1
3.8
3.5
25.2
18.8
Max
-
1
±10
1.6
0.4
0.7
1.2
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
μA
V
Ω
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 24V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 0.59A
V
GS
= 4.5V, I
D
= 0.2A
V
GS
= 0V, I
S
= 0.23A
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= V
GS
= 0V, f = 1.0MHz
V
DS
= 10V,
I
D
= 250mA
V
GS
= 10V, V
DS
= 30V,
I
D
= 100mA, R
G
= 1Ω
DMC3400SDW
Document number: DS37690 Rev. 1 - 2
2 of 9
www.diodes.com
February 2015
© Diodes Incorporated
DMC3400SDW
Electrical Characteristics – P Channel – Q2
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
-30
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
0.36
0.57
-0.8
54
10
8.3
240
0.6
1.3
0.2
0.2
5.7
8.8
35
19
Max
-
-1
±10
-2.6
0.9
1.7
-1.2
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
μA
V
Ω
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -24V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -0.42A
V
GS
= -4.5V, I
D
= -0.2A
V
GS
= 0V, I
S
= -0.23A
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= V
GS
= 0V, f = 1.0MHz
V
DS
= -10V, I
D
= -0.24A
NEW PRODUCT
NEW PRODUCT
V
GS
= -10V, V
DD
= -15V,
I
D
= -0.5A, R
G
= 1Ω
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMC3400SDW
Document number: DS37690 Rev. 1 - 2
3 of 9
www.diodes.com
February 2015
© Diodes Incorporated
DMC3400SDW
Typical Characteristics - N-CHANNEL
1.5
V
GS
=3.5V
I
D
, DRAIN CURRENT (A)
1.2
V
GS
=4.0V
0.9
V
GS
=4.5V
V
GS
=3.0V
I
D
, DRAIN CURRENT (A)
0.8
1
V
DS
=5V
NEW PRODUCT
NEW PRODUCT
0.6
0.6
V
GS
=10V
0.3
V
GS
=2.0V
0.0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
V
GS
=2.5V
0.4
T
A
=150℃
T
A
=125℃
T
A
=25℃
T
A
=-55℃
0.2
T
A
=85℃
0
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
0.4
0.35
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (Ω)
0.3
V
GS
=4.5V
0.25
0.2
V
GS
=10V
0.15
0.1
0.05
0
0.2
0.4
0.6
0.8
1
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0.6
V
GS
= 4.5V
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (Ω)
0.5
0.4
T
A
=85℃
0.3
T
A
=25℃
0.2
T
A
=-55℃
0.1
0
0
0.2
0.4
0.6
0.8
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain
Current and Temperature
1
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
T
A
=150℃
T
A
=125℃
0
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (Ω)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
3
5
7
9 11 13 15 17 19
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
21
I
D
=200mA
I
D
=590mA
1.8
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75 100 125
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with
Temperature
150
V
GS
=10V, I
D
=590mA
V
GS
=4.5V, I
D
=200mA
DMC3400SDW
Document number: DS37690 Rev. 1 - 2
4 of 9
www.diodes.com
February 2015
© Diodes Incorporated
DMC3400SDW
0.6
2
V
GS(TH)
, GATE THESHOLD VOLTAGE (V)
0.5
R
DS(ON)
, DRAIN-SOURCE
ON-ESISTANCE (Ω)
1.8
1.6
1.4
1.2
I
D
=250µA
1
0.8
0.6
0.4
I
D
=1mA
0.4
V
GS
=4.5V, I
D
=200mA
NEW PRODUCT
NEW PRODUCT
0.3
0.2
V
GS
=10V, I
D
=590mA
0.1
0
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with
Temperature
1
0.9
I
S
, SOURCE CURRENT (A)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
1.5
T
A
=125℃
T
A
=25℃
T
A
=-55℃
T
A
=150℃
T
A
=85℃
V
GS
=0V
C
T
, JUNCTION CAPACITANCE (pF)
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Theshold Variation vs. Junction
Temperature
100
f=1MHz
C
iss
10
C
oss
C
rss
1
0
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
R
DS(ON)
Limited
I
D
, DRAIN CURRENT (A)
8
1
DC
P
W
=10s
P
W
=1s
P
W
=100ms
P
W
=10ms
0.01
T
J(Max)
=150℃
T
A
=25℃
V
GS
=10V
Single Pulse
DUT on 1*MRP Board
0.1
P
W
=1ms
P
W
=100μs
100
6
V
GS
(V)
0.1
4
V
DS
=10V, I
D
=250mA
2
0
0
0.3
0.6
0.9
1.2
Qg (nC)
Figure 11. Gate Charge
1.5
0.001
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
DMC3400SDW
Document number: DS37690 Rev. 1 - 2
5 of 9
www.diodes.com
February 2015
© Diodes Incorporated
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