DMG1029SV
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q1
V
(BR)DSS
60V
R
DS(ON)
max
1.7Ω @ V
GS
= 10V
3Ω @ V
GS
= 4.5V
4Ω @ V
GS
= -10V
6Ω @ V
GS
= -4.5V
I
D
max
T
A
= +25°C
500mA
400mA
-360mA
-310mA
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Q2
-60V
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.027 grams (approximate)
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
SOT563
D
1
G
2
S
2
Q
1
Q
2
Top View
Bottom View
S
1
G
1
D
2
Ordering Information
(Note 4 & 5)
Part Number
DMG1029SV-7
DMG1029SVQ-7
Notes:
Compliance
Standard
Automotive
Case
SOT563
SOT563
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
Marking Information
GA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
GA1
YM
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
Feb
2
2010
X
Mar
3
Apr
4
2011
Y
May
5
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
DMG1029SV
Document number: DS35421 Rev. 3 - 2
1 of 9
www.diodes.com
August 2013
© Diodes Incorporated
DMG1029SV
Maximum Ratings N-CHANNEL – Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Pulsed Drain Current (Note 7)
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
Value
60
±20
500
400
620
480
1000
Units
V
V
mA
mA
mA
NEW PRODUCT
Continuous Drain Current (Note 7) V
GS
= 10V
Maximum Ratings P-CHANNEL – Q2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Pulsed Drain Current (Note 7)
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
Value
-60
±20
-360
-280
-410
-320
-650
Units
V
V
mA
mA
mA
Continuous Drain Current (Note 7) V
GS
= -10V
Thermal Characteristics
Total Power Dissipation (Note 6)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
Symbol
P
D
R
JA
P
D
R
JA
T
J,
T
STG
Value
0.45
0.28
281
210
1
0.62
129
97
-55 to +150
Units
W
°C/W
W
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Operating and Storage Temperature Range
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
DMG1029SV
Document number: DS35421 Rev. 3 - 2
2 of 9
www.diodes.com
August 2013
© Diodes Incorporated
DMG1029SV
Electrical Characteristics N-CHANNEL – Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T
C
= +25°C
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
60
—
—
1.0
—
—
80
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
1.3
1.5
—
—
30
4.2
2.9
0.3
0.2
0.08
3.9
3.4
15.7
9.9
Max
—
10
±50
2.5
1.7
3
—
1.4
—
—
—
—
—
—
—
—
—
—
Unit
V
nA
nA
V
Ω
mS
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
DD
= 30V, V
GS
= 10V,
R
G
= 25Ω, I
D
= 200mA
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
=50V, V
GS
= 0V
V
GS
= ±5V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 500mA
V
GS
= 4.5V, I
D
= 200mA
V
DS
= 10V, I
D
= 200mA
V
GS
= 0V, I
S
= 115mA
NEW PRODUCT
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Electrical Characteristics P-CHANNEL – Q2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
@T
C
= +25°C
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-60
—
—
-1
—
—
50
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
2.7
3.2
—
—
25
4.7
2.7
0.28
0.14
0.08
5.5
7.9
10.6
11.6
Max
—
-25
±100
-3.0
4
6
—
-1.4
—
—
—
—
—
—
—
—
—
—
Unit
V
nA
nA
V
Ω
mS
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -50V, V
GS
= 0V
V
GS
= ±5V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -500mA
V
GS
= -4.5V, I
D
= -200mA
V
DS
= -25V, I
D
= -100mA
V
GS
= 0V, I
S
= -115mA
V
DS
= -25V, V
GS
= 0V,
f = 1.0MHz
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -500mA
V
DD
= -30V, V
GS
= -10V,
R
G
= 50Ω, I
D
= -270mA
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMG1029SV
Document number: DS35421 Rev. 3 - 2
3 of 9
www.diodes.com
August 2013
© Diodes Incorporated
DMG1029SV
N-CHANNEL – Q1
1.4
1.2
I
D
, DRAIN CURRENT (A)
1.0
0.8
0.6
0.4
0.2
0
1.0
0.9
0.8
I
D
, DRAIN CURRENT (A)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
2
3
4
V
DS
, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
5
T
A
= 150
C
T
A
= 125
C
T
A
= 85
C
T
A
= 25
C
T
A
= -55
C
NEW PRODUCT
0
0
1
2
3
4
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
)
R
DS(ON)
,DRAIN-SOURCE ON-RESISTANCE(
)
10
10
V
GS
= 5.0V
T
A
= 125
C
T
A
= 150
C
T
A
= 85
C
T
A
= 25
C
1.0
1
T
A
= -55
C
0.1
0
0.2
0.4
0.6
0.8
I
D
, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.0
0.1
0
0.2
0.4
0.6
0.8
I
D
, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
I
D
=150mA
1.0
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
3.0
2.5
7
6
I
D
=300mA
2.0
5
4
3
2
1
0
1.5
1.0
0.5
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 5 On-Resistance Variation with Temperature
0
4
8
12
16
20
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance vs.
Gate-Source Voltage
DMG1029SV
Document number: DS35421 Rev. 3 - 2
4 of 9
www.diodes.com
August 2013
© Diodes Incorporated
DMG1029SV
1.0
C
T
, JUNCTION CAPACITANCE (pF)
0.9
I
S
, SOURCE CURRENT (A)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.2
0.4
0.6
0.8
1.0
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Diode Forward Voltage vs. Current
1.2
0
0
5
10
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Typical Junction Capacitance
20
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
50
f = 1MHz
40
C
ISS
30
NEW PRODUCT
20
C
OSS
C
RSS
T
A
= 25°C
T
A
= -55°C
10
DMG1029SV
Document number: DS35421 Rev. 3 - 2
5 of 9
www.diodes.com
August 2013
© Diodes Incorporated
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